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    SEP03 Search Results

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    SEP03 Price and Stock

    TE Connectivity DBAS-EP-03

    DBAS-EP 03
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    DigiKey DBAS-EP-03 Bulk 12
    • 1 -
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    • 100 $243.025
    • 1000 $243.025
    • 10000 $243.025
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    Master Electronics DBAS-EP-03
    • 1 -
    • 10 $246.27
    • 100 $241.34
    • 1000 $241.34
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    F&F SEP-03USB

    Converter: signal separator; for DIN rail mounting; IP20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEP-03USB 3 1
    • 1 $48.14
    • 10 $42.12
    • 100 $42.12
    • 1000 $42.12
    • 10000 $42.12
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    TE Connectivity DBAS-EP 03

    DBAS-EP 03
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    Interstate Connecting Components DBAS-EP 03
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    SEP03 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEP0300Q38CB Littelfuse TVS - Other Composition, Circuit Protection, SIDACTOR ETHERNET POE 30V 100A Original PDF

    SEP03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    amphenol 03554

    Abstract: No abstract text available
    Text: 1 2 3 4 5 REVISIONS PART NUMBER LAST DIGIT INDICATING PACKAGING TYPE, NOT PRINTED ON THE PART A 6 REV. ECN A B DESCRIPTION DATE PROPOSAL ADD 2X1 AND 2X8 MAR08/09 APPROVED SEP03/10 A DATE CODE LIGHT PIPE CONFIGURATIONS U86-DX42C-10XX1 U86-DX42C-30XX1 U86-DX42C-20XX1


    Original     		PDF MAR08/09 SEP03/10 U86-DX42C-10XX1 U86-DX42C-30XX1 U86-DX42C-20XX1 UL94-0. JUL06/09 P-U86-DX42C-X0XX1 amphenol 03554

    Untitled

    Abstract: No abstract text available
    Text: FORM 10-Q UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, DC 20549 [X] QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the quarterly period ended June 1, 2000 OR [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES


    Original     		PDF AUG-31-2000 SEP-03-1999 JUN-01-2000

    LL103A

    Abstract: SD103A SD103AW SD103BW SD103CW Micro Electronic Instrument
    Text: SCHOTTKY BARRIER DIODE SD103AW THRU SD103CW VOLTAGE RANGE CURRENT 20 To 40 Volts 350 mA FEATURES • • • • • Fast Switching speed Low forward voltage Low capacitance Guard ring for transient and ESD protection Also available in the DO-35 package as SD103A and


    Original     		PDF SD103AW SD103CW DO-35 SD103A LL103A OD-123 MIL-STD-202 OD-123 Sep-03, LL103A SD103BW SD103CW Micro Electronic Instrument

    transistor 5-2736

    Abstract: 55320 163356 59265 40198 40198 IC 5-2736 TARF1503U 54139 4504 0227
    Text: TARF1503U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1503U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package


    Original     		PDF TARF1503U OT-323 TARF1503U OT323 10GHz 800GHz 000GHz 200GHz 400GHz 600GHz transistor 5-2736 55320 163356 59265 40198 40198 IC 5-2736 54139 4504 0227

    1733-9-1

    Abstract: 60466 ice 0565 162022 52491 54645 165341 at 89552 data 137-411 TARF1504U
    Text: TARF1504U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1504U is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package


    Original     		PDF TARF1504U OT-323 TARF1504U OT323 000GHz 200GHz 400GHz 600GHz 800GHz 1733-9-1 60466 ice 0565 162022 52491 54645 165341 at 89552 data 137-411

    504-G

    Abstract: HER501G HER508G 506-G
    Text: HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER HER501G THRU HER508G VOLTAGE RANGE CURRENT 50 to 1000 Volts 5.0 Ampere FEATURES • • • • • • Glass passivated chip junction Low power loss, high efficiency Low Leakage High speed switching High Surge Capacity


    Original     		PDF HER501G HER508G UL94V STD-202E DO-27 Sep-03, 504-G HER508G 506-G

    BCR139

    Abstract: BCR139F BCR139L3 BCR139T SC75
    Text: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ BCR139/F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration BCR139 WYs 1=B 2=E 3=C - - - SOT23


    Original     		PDF BCR139. BCR139/F/L3 BCR139T EHA07264 BCR139 BCR139F BCR139L3 Sep-03-2003 BCR139 BCR139F BCR139L3 BCR139T SC75

    BCR108T

    Abstract: BCR164 BCR164F BCR164L3 BCR164T E6327 SC75
    Text: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*


    Original     		PDF BCR164. BCR164F/L3 BCR164T EHA07183 BCR164F* BCR164L3* BCR164T* BCR108T BCR164 BCR164F BCR164L3 BCR164T E6327 SC75

    CYGNAL cp2101

    Abstract: "USB Connector" CYGNAL USB CABLE usb connector CP2101 cable rs232 CP2101 data cable CYGNAL INTEGRATED PRODUCTS DB9-connector
    Text: CP2101 Evaluation Kit User’s Guide * Attention: Windows users should install Software according to the instructions in Section 2 BEFORE connecting the CP2101 USB cable to a PC. * 1. Kit Contents


    Original     		PDF CP2101 RS232 CP2101. CYGNAL cp2101 "USB Connector" CYGNAL USB CABLE usb connector cable rs232 CP2101 data cable CYGNAL INTEGRATED PRODUCTS DB9-connector

    bridge rectifier KBJ 606g

    Abstract: 604g transistor 606G 603G KBJ601G KBJ607G
    Text: SINGLE PHASE GLASS PSSIVATED BRIDGE RECTIFIER KBJ601G THRU KBJ607G VOLTAGE RANGE CURRENT 50 to 1000 Volts 6.0 Ampere FEATURES • • • • • Plastic package has UL flammability Classification 94V – 0 Glass passivated chip junction High case dielectric strength of 1500 VRMS


    Original     		PDF KBJ601G KBJ607G MIL-STD-750 Sep-03, bridge rectifier KBJ 606g 604g transistor 606G 603G KBJ607G

    RAS50

    Abstract: Automotive Rectifier RAS5005 thru RAS5010 RAS5010 RAS5005
    Text: AUTOMOTIVE RECTIFIER RAS5005 THRU RAS5010 VOLTAGE RANGE CURRENT 50 to 1000 Volts 50.0 Ampere FEATURES • • • • Low Leakage Low forward voltage drop High current capability High forward surge current capacity MECHANICAL DATA • • • • • • Case: transfer molded plastic


    Original     		PDF RAS5005 RAS5010 UL94V-0 MIL-STD-202E 105OC Sep-03, RAS50 Automotive Rectifier RAS5005 thru RAS5010 RAS5010

    Cygnal Integrated Products

    Abstract: No abstract text available
    Text: Preliminary CP2101 Single-Chip USB to UART Bridge SINGLE-CHIP USB to UART DATA TRANSFER - Integrated USB Transceiver; No External Resistors - Required Integrated Clock; No External Crystal Required Integrated 512-Byte EEPROM for Vendor ID, Product ID, Serial Number, Power Descriptor, Release Number and


    Original     		PDF CP2101 512-Byte CIP-51 MCS-51 B-100 DS014-1 SEP03 Cygnal Integrated Products

    IGW08T120

    Abstract: BUP305D BUP305-D mj04
    Text: Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE sat compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply


    Original     		PDF IGW08T120 BUP305D 15nformation Sep-03 IGW08T120 BUP305D BUP305-D mj04

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    ice 38156

    Abstract: 52169 TARF1504E 6012 transistor 20449 163462 76129 62639 160505 67551
    Text: TARF1504E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1504E is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package


    Original     		PDF TARF1504E OT-523 TARF1504E OT523 VC00GHz 800GHz 000GHz 200GHz 400GHz ice 38156 52169 6012 transistor 20449 163462 76129 62639 160505 67551

    BCR164

    Abstract: BCR164F BCR164L3 BCR164T SC75 bcr1
    Text: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*


    Original     		PDF BCR164. BCR164F/L3 BCR164T EHA07183 BCR164F* BCR164L3* BCR164T* BCR164L3 Sep-03-2003 BCR164 BCR164F BCR164L3 BCR164T SC75 bcr1

    455 800 jrc

    Abstract: NSVS1065 s11 mark smd
    Text: NSVS1065 Sep-03 JRC SAW FILTER NSVS1065 Application FRS Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Typical Input and Output Impedance ― 50Ω Nominal Center Frequency (f0)


    Original     		PDF NSVS1065 Sep-03 NSVS1065 465MHz 7125MHz 390MHz 3125MHz 1125MHz 455 800 jrc s11 mark smd

    BCR191

    Abstract: BCR191F BCR191L3 BCR191S BCR191T BCR191W
    Text: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package


    Original     		PDF BCR191. BCR191/F/L3 BCR191T/W BCR191S EHA07173 EHA07183 BCR191 BCR191F BCR191L3 BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W

    samsung 10K filing SEC

    Abstract: samsung 10K filing SEC 2015 List of company identifications samsung electronics 10K filing SEC INTEL 8049 PC NEC 9736 samsung 10K 2015 DRAM 4416
    Text: FORM 10-Q UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, DC 20549 [X] QUARTERLY REPORT PURSUANT TO SECTION 13 OR 15 d OF THE SECURITIES EXCHANGE ACT OF 1934 For the quarterly period ended December 2, 1999 OR [ ] TRANSITION REPORT PURSUANT TO SECTION 13 OR 15(d) OF THE SECURITIES


    Original     		PDF AUG-31-2000 SEP-03-1999 DEC-02-1999 samsung 10K filing SEC samsung 10K filing SEC 2015 List of company identifications samsung electronics 10K filing SEC INTEL 8049 PC NEC 9736 samsung 10K 2015 DRAM 4416

    DFM IV

    Abstract: 1506M 1502M dfm circuit DF15005M DF1510M 1510M
    Text: SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER DF15005M THRU DF1510M VOLTAGE RANGE CURRENT 50 to 1000 Volts 1.5 Ampere FEATURES • • • • high forward surge current capability Glass passivated chip junction High case dielectric strength High temperature soldering guaranteed:


    Original     		PDF DF15005M DF1510M 260OC MIL-STD-750 Sep-03, DFM IV 1506M 1502M dfm circuit DF1510M 1510M

    35495 power transistor

    Abstract: TRANSISTOR 35495 IC 49701 62150 35495 transistor 145158 44258 148-509 164-895 69065
    Text: TARF1503Z NPN Planer RF TRANSISTOR SOT-343 unit : [mm] □ DESCRIPTION The TARF1503Z is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT343 package


    Original     		PDF TARF1503Z OT-343 TARF1503Z OT343 10GHz 800GHz 000GHz 200GHz 400GHz 600GHz 35495 power transistor TRANSISTOR 35495 IC 49701 62150 35495 transistor 145158 44258 148-509 164-895 69065

    A 69157

    Abstract: 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 TARF1503E 74288
    Text: TARF1503E NPN Planer RF TRANSISTOR SOT-523 □ DESCRIPTION unit : mm The TARF1503E is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT523 package


    Original     		PDF TARF1503E OT-523 TARF1503E OT523 10GHz 800GHz 000GHz 200GHz 400GHz A 69157 276-145 transistor 585-42 ice 0565 151-237 74292 ic 74210 16-878-1 74288

    SFP0-3040-L

    Abstract: No abstract text available
    Text: 63,25 REF 8 ,0 R E E 0 0 . 2 5 |a [ b 1 S IG N A L S 5 1 ,6 3 TYP \K_ QYy Per; PART TRAY SARTEN 16 96 NUMBER STATEMENT SEP0-3040-L No. 01 D E S C R IP A T IO N SFP CAGE N on-Lo go IN N FR/EUTFR Q ’t y 1 LIG H T M A T E R IA L COPPER ALLOY 02 CONNECTOR


    OCR Scan     		PDF SEP0-3040-L SFP0-3040-L CSFP0-3040-L SFP0-3040-L

    XFATM9B

    Abstract: No abstract text available
    Text: Sch e m atic: Isolation Voltage: 1500Vrms UTP SIDE OCL: 350uH Min @100KHz 100mV SmADC Rise Time 1 0 - 9 0 % : 2.5ns Typical Insertion Loss (300KHz—100MHz): —1.1 dB Maximum Insertion Loss (1 DOMHz—125MHz)i —1.5dB Maximum Return Loss: —18dB Min. @30MHz


    OCR Scan     		PDF 1500Vrms 350uH 100KHz 100mV 300KHz- 100MHz) DDMHz-125MHz -18dB 30MHz 80MHz XFATM9B