Untitled
Abstract: No abstract text available
Text: MBS-GMBS-G
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M10S1
Abstract: SG DO-214AC
Text: S1A thru S1M Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA 0.065 (1.65) Features 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) • Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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DO-214AC
DO-214AC
50mVp-p
013mm)
M10S1
SG DO-214AC
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Untitled
Abstract: No abstract text available
Text: Feed-through terminal block - UK 2,5 B - 3001035 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid
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com/sg/products/3001035
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n551
Abstract: ATT220A BYW51 BYW51-200 BYW51F-200 T0220AB N409
Text: SCS-THOMSON RfflDte^OmLKeTTIRiOKlDtSS B Y W 5 1 F HIGH E FFIC IEN C Y FAST RECO VERY R EC TIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY
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BYW51
ISOWATT220AB)
T0220AB,
WATT220AB
n551
ATT220A
BYW51
BYW51-200
BYW51F-200
T0220AB
N409
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PDF
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marking aj
Abstract: S1M DO-214AC
Text: S1A thru S1M Surface Mount Glass Passivated Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.) 0.177 (4.50) Dimensions in inches
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DO-214AC
50mVp-p
013mm)
marking aj
S1M DO-214AC
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Untitled
Abstract: No abstract text available
Text: SKCH 28 VN$W VNNW@ VHNW YH Q FR Z O8&- <,5 &<%*,5P V ^JJ CJJ RJJ LFJJ V ^JJ CJJ RJJ LFJJ O[< Q R¥ ]GP $SG; FRTJ^ $SG; FRTJC $SG; FRTJR $SG; FRTLF L^JJ L^JJ $SG; FRTL^ Symbol Conditions YH [< Q RE ]G [.Q ^E ]G_ <7.+*+ LP [.Q ^E ]G_ IEZTLJJ [.Q ^E ]G_ ILDZTLFE
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TA84007PQ
Abstract: No abstract text available
Text: TA84007PQ/SG/FG Preliminary TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA84007PQ,TA84007SG,TA84007FG DC Motor Full Bridge Driver ICs Forward/reverse switching driver ICs The TA84007PQ, TA84007SG and TA84007FG are bridge driver ICs designed for forward/reverse rotation switching and that are
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TA84007PQ/SG/FG
TA84007PQ
TA84007SG
TA84007FG
TA84007PQ,
TA84007FG
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BT2012
Abstract: THBT20012
Text: [ Z J SG S-TH O M SO N ÌD M E M 0 K I THBT150 THBT200 / THBT270 TRISIL FEATURES • BIDIRECTIONAL TRIPLE PROTECTION ■ CROWBAR PROTECTION . PEAK PULSE CURRENT: Ipp = 30 A , 10/1000 |is ■ HOLDING CURRENT = 150 mA min ■ AVAILABLE IN DIP 8 AND SO 8 PACKAGES
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THBT150
THBT200
THBT270
THBT15011
THBT20011
THBT27011
BT1511
BT2011
BT2711
THBT15012
BT2012
THBT20012
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SG412
Abstract: SG307 ntc SG-414 SG328
Text: I n r u s h C u r r e n t L im it in g D e v ic e s Description Ketema Rodan Surge-Gard devices are manufactured of a specially formulated metal oxide ceramic material which is capable of suppressing high inrush current surges. They are especially useful in power supplies See Fig. A where,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U1GWJ44 Ul G W J 4 4 TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Average Forward Current : Ijr AV = 1-0A Low Forward Voltage : V fm = 0.55 V (Max.) Surface Mounting Plastic Mold Package
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U1GWJ44
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GENERAL SEMICONDUCTOR MARKING SJ SMA
Abstract: VISHAY MARKING SG SMA S1JHE3/61T VISHAY MARKING SG s1jhe3 S1JHE3/5AT s1m marking code VISHAY S1M S1JE3 SMA DO-214AC SA
Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability
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J-STD-020C,
DO-214AC
2002/95/EC
2002/96/EC
08-Apr-05
GENERAL SEMICONDUCTOR MARKING SJ SMA
VISHAY MARKING SG SMA
S1JHE3/61T
VISHAY MARKING SG
s1jhe3
S1JHE3/5AT
s1m marking code
VISHAY S1M
S1JE3
SMA DO-214AC SA
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Untitled
Abstract: No abstract text available
Text: S G S -ÏH O M S O N KÆ0ra@[EL[iûre ^0 i BZV47C5V1 / 200 2W ZENER DIODES FEATURES • VOLTAGE RANGE :5 .1 V to 200 V ■ HERMETICALLY SEALED P LA S TIC C ASE: F126 PACKAGE ■ HIGH SURGE C A P A B ILITY : 55 W 10 m s . DESCRIPTION 2 W silicon Zener diodes.
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BZV47C5V1
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SMA MARKING S1G
Abstract: SURFACE MOUNT DIODES MIL GRADE
Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability
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DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
J-STD-002
08-Apr-05
SMA MARKING S1G
SURFACE MOUNT DIODES MIL GRADE
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Untitled
Abstract: No abstract text available
Text: SG S-ÏHO M SO N mœmieraiMOSS BZW04-5V8/376 BZW04-5V8B/376B TRANSIL FEATURES • PEAK PULSE POWER: 400 W 10/IOOQus ■ STAND-OFF VOLTAGE RANGE: From 5.8V to 376 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME ■ UL RECOGNIZED
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BZW04-5V8/376
BZW04-5V8B/376B
10/IOOQus)
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11EQS09
Abstract: 11EQS10
Text: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES o Miniature Size <3l ° Low Forward Voltage Drop 2.7C.106 .DIA MAX 0.601024) p , «s 0.54 .Q21) .27(1.06) MIN Low Power Loss, High Efficiency ° High Surge Capability » 20 Volts thru 100 Volts Types Available
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11EQS09
11EQS10
11EQS09
125-C
00017m
11EQS10
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GV 475 diode
Abstract: TD422
Text: 1C for Multifunction Telephones LAG640 MâïSUMÎ Monolithic IC LAG640 This 1C was developed for use in multifunctional telephones with security features; it has the following functions. 1. Incorporates efficient switching regulator with broad input voltage range
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LAG640
250mA
3-45V)
200pF,
100mA
500mA
700mA
GV 475 diode
TD422
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PA0806.004NL
Abstract: 18V75V BSC057N08NS3 PA2008 LTC3766GN
Text: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller Description Features Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit n Clean Start-Up Into Pre-Biased Output n Secondary-Side Control for Fast Transient Response
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LTC3766
LTC3765
LTC3765,
3766fa
com/LTC3766
PA0806.004NL
18V75V
BSC057N08NS3
PA2008
LTC3766GN
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Untitled
Abstract: No abstract text available
Text: LTC3766 High Efficiency, Secondary-Side Synchronous Forward Controller DESCRIPTION FEATURES n n n n n n n n n n n n n Direct Flux Limit Guarantees No Saturation Fast and Accurate Average Current Limit Clean Start-Up Into Pre-Biased Output Secondary-Side Control for Fast Transient Response
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LTC3766
28-Lead
3766f
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Untitled
Abstract: No abstract text available
Text: New Product S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability
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DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: LX7309 Advanced Multi-topology Current-Mode Controller Production Datasheet Description The LX7309 is a versatile current-mode DC-DC controller for isolated/non-isolated topologies. It features a low-resistance current-sensing scheme for max 200mV drop, using a differential current-sense
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LX7309
LX7309
200mV
155mm(
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VISHAY MARKING SG SMA
Abstract: JESD22-B102 J-STD-002 GENERAL SEMICONDUCTOR MARKING SJ SMA marking code s1a
Text: S1A thru S1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability
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Original
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J-STD-020,
DO-214AC
2002/95/EC
2002/96/EC
11-Mar-11
VISHAY MARKING SG SMA
JESD22-B102
J-STD-002
GENERAL SEMICONDUCTOR MARKING SJ SMA
marking code s1a
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50-150B
Abstract: No abstract text available
Text: S G S - Ï H O M S O N m œ m ie r a M o s s B Z W 5 0 - 10 , B/18 0 , B TRANSIL FEATURES • PEAK PULSE POWER : 5000 W 10/1 OOO^s ■ STAND-OFF VOLTAGE RANGE: From 10V to 180 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSE TIME
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ICs TV M52766FP PLL SPLIT V IF / SIF DESCRIPTION The M52766FP is a semiconducttor 1C with PLL system of VIF/ SIF. The circuit includes video UF amplifier,PLL video detector, IFAGC,RFAGC,VCO, AFT, LOCK DET,EQ,REG,QIFamplifier,QIF detector,QIF AGC,LIM,FM
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M52766FP
M52766FP
M5M4V4160J
4194304-BIT
262144-WORD
16-BIT
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earth leakage diagram
Abstract: Circuit breaker Mitsubishi MD234 M54125L M54125P Power Circuit breaker Mitsubishi WF capacitor EARTH LEAKAGE CURRENT DETECTOR
Text: MITSUBISHI <CONTROL / DRIVER IC> M54125L/P EARTH LEAKAGE CURRENT DETECTOR DESCRIPTION The M54125 is a semiconductor integrated circuit consisting of an amplifier for high-speed earth leakage circuit breaker. PIN CONFIGURATION TOP VIEW Capacitor MM → ← 1
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M54125L/P
M54125
earth leakage diagram
Circuit breaker Mitsubishi
MD234
M54125L
M54125P
Power Circuit breaker Mitsubishi
WF capacitor
EARTH LEAKAGE CURRENT DETECTOR
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