SG 94 DIODE SMD
Abstract: diode sg 96 20MH BDD20050922-050901V2 BDD20070920V3 smd WIRE 0.6 mm W15 Hs 1 fuse SG 23 DIODE SMD
Text: Ultra High Efficiency 94-96% High-Speed Response Step-Down DC-DC Converter BSV - m3,m6,m8 BSV-m3, m6, m8 is an ultra small size 15x24×4mm size and light weight (2.6g) step-down DC-DC converter, which has achieved maximum 26W. Since it can correspond from ultra low output voltage of 1.0V, it can be used for the latest DSP, ASIC applications. Due to high-speed response,
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BDD20050922-050901V2
SG 94 DIODE SMD
diode sg 96
20MH
BDD20050922-050901V2
BDD20070920V3
smd WIRE 0.6 mm W15
Hs 1 fuse
SG 23 DIODE SMD
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nec 2501
Abstract: DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-A 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-A is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-A provides an isolated
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88A-A
6V-72VIN,
LTC3725/LTC3706
88A-A
LTC3725
LTC3706.
DC888A-A
DC888A
250kHz
J1-10
nec 2501
DIODE FS 604
c86 sot23
CRCW12065R10
CAP 10nF 200V 0603
2501-2-00-80-00-00-07-0
transistor P18 FET
2N7002-SOT23
AC Transformer 50A 100V
LTC3706
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Motorola transistor smd marking codes
Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V040F033T060 VTM V•I Chip – VTM Voltage Transformation Module • 3.3 V V•I Chip Converter • 125°C operation • 60 A 90 A for 1 ms • 1 µs transient response • High density – 730 W/in3 • 3.5 million hours MTBF • Small footprint – 180 W/in2
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V040F033T060
V040F033T060
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smd marking m4
Abstract: SG 94 DIODE SMD smd diode marking sG smd fuse marking 20 D496 D505 V040F033T060 V048F040T050
Text: PRELIMINARY DISCONTINUED AS OF JAN 5, 2007 SEE V048F040T050 FOR REPLACEMENT PART NUMBER VTM V040F033T060 V•I Chip – VTM Voltage Transformation Module • 3.3 V V•I Chip Converter • 125°C operation • 60 A 90 A for 1 ms • 1 µs transient response
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V048F040T050
V040F033T060
V040F033T060
smd marking m4
SG 94 DIODE SMD
smd diode marking sG
smd fuse marking 20
D496
D505
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F-033
Abstract: No abstract text available
Text: PRELIMINARY V040F033T060 VTM V•I Chip – VTM Voltage Transformation Module • 3.3 V V•I Chip Converter • 125°C operation • 60 A 90 A for 1 ms • 1 µs transient response • High density – 730 W/in3 • 3.5 million hours MTBF • Small footprint – 180 W/in2
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V040F033T060
V040F033T060
F-033
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SG 94 DIODE SMD
Abstract: No abstract text available
Text: PRELIMINARY VTM V•I Chip – VTM Voltage Transformation Module TM V048K015T80 1 Vf = 32 - 57.6 V VOUT = 1.0 - 1.8 V IOUT = 80 A K = 1/32 ROUT = 1.5 mΩ max • 48V to 1.5V V•I Chip Converter • >92% efficiency at 1.5V • 80 A 120 A for 1 ms • 125°C operation
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V048K015T80
V048K015T80
SG 94 DIODE SMD
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smd diode marking sG
Abstract: V048K015T80 JESD22-A-103A JESD22-A-104B SR-332 V048L015T80 P8095 SMD diode sg 46 SG 94 DIODE SMD
Text: V•I Chip – VTM Voltage Transformation Module TM V048K015T80 1 Vf = 32 - 57.6 V VOUT = 1.0 - 1.8 V IOUT = 80 A K = 1/32 ROUT = 1.5 mΩ max • 48V to 1.5V V•I Chip Converter • >92% efficiency at 1.5V • 80 A 120 A for 1 ms • 125°C operation • High density – up to 320 A/in3
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V048K015T80
V048K015T80
11/03/10M
smd diode marking sG
JESD22-A-103A
JESD22-A-104B
SR-332
V048L015T80
P8095
SMD diode sg 46
SG 94 DIODE SMD
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siemens Logo TDE manual
Abstract: wega 3140 smd marking code mfw cb pj 47 diode Diode MFW 26
Text: Identification systems Contents CATALOGUE 7 Identification systems Appendix Introduction A Terminal markers B Wire and cable markers C Device markers D Printing systems E Weidmüller Service V Index X Search according to Type or order number, Worldwide activities
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very simple walkie talkie circuit diagram
Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
very simple walkie talkie circuit diagram
blf278 models
walkie talkie circuit diagram
simple walkie talkie circuit diagram
SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6
BF245c spice model
smd TRANSISTOR code marking 8K
MOBILE jammer GSM 1800 MHZ
BSS83 spice model
smd TRANSISTOR code marking 7k sot23
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double TRANSISTOR SMD MARKING CODE mc
Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
double TRANSISTOR SMD MARKING CODE mc
walkie talkie circuit diagram
very simple walkie talkie circuit diagram
smd TRANSISTOR code marking 8K
smd m5 transistor 6-pin
walkie talkie Transceiver IC
mesfet lnb
toshiba smd marking code transistor
blf574
BLF578
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V048F015T100 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response • High density – 365 A/in3 • 3.5 million hours MTBF • Small footprint – 90 A/in2
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V048F015T100
V048F015T100
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VTM 48
Abstract: D496 D505 V048F020T080
Text: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2
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V048F020T080
V048F020M080
V048F020T080
VTM 48
D496
D505
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VTM 48
Abstract: D496 D505 V048F015T100 J1 DIODE
Text: V048F015T100 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response • High density – 365 A/in3 • 3.5 million hours MTBF • Small footprint – 90 A/in2
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V048F015T100
V048F015T100
VTM 48
D496
D505
J1 DIODE
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V048F015T100 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 1.5 V V•I Chip Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response • High density – 365 A/in3 • 3.5 million hours MTBF • Small footprint – 90 A/in2
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V048F015T100
V048F015T100
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V040F033T060 VTM V•I Chip – VTM Voltage Transformation Module • 40 V to 3.3 V V•I Chip Converter • 125°C operation • 60 A 90 A for 1 ms • 1 µs transient response • High density – 730 W/in3 • 3.5 million hours MTBF • Small footprint – 180 W/in2
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V040F033T060
V040F033T060
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V040F033T060 VTM V•I Chip – VTM Voltage Transformation Module • 3.3 V V•I Chip Converter • 125°C operation • 60 A 90 A for 1 ms • 1 µs transient response • High density – 730 W/in3 • 3.5 million hours MTBF • Small footprint – 180 W/in2
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V040F033T060
V040F033T060
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Untitled
Abstract: No abstract text available
Text: V048F015T100 VTM VTMTM Voltage Transformation Module • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response • High density – 365 A/in3 • 3.5 million hours MTBF • Small footprint – 90 A/in2
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V048F015T100
V048F015T100
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Untitled
Abstract: No abstract text available
Text: V048F015T100 V048F015M100 VTM VTMTM Current Multiplier • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 345 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2
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V048F015T100
V048F015M100
V048F015T100
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Untitled
Abstract: No abstract text available
Text: V048F015T100 VTM VTMTM Voltage Transformation Module • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response • High density – 365 A/in3 • 3.5 million hours MTBF • Small footprint – 90 A/in2
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V048F015T100
V048F015T100
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Untitled
Abstract: No abstract text available
Text: V048F015T100 V048F015M100 VTM VTMTM Current Multiplier • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation • 100 A 150 A for 1 ms • 1 µs transient response • High density – 365 A/in3 • 3.5 million hours MTBF • Small footprint – 90 A/in2
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V048F015T100
V048F015M100
V048F015T100
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VTM 48
Abstract: D496 D505 V048F020T080 smd diode marking sG
Text: V048F020T080 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response • High density – 553 /in3 • 3.5 million hours MTBF • Small footprint – 140 /in2
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V048F020T080
V048F020T080
VTM 48
D496
D505
smd diode marking sG
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V048F020T080 VTM V•I Chip – VTM Voltage Transformation Module • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response • High density – 553 /in3 • 3.5 million hours MTBF • Small footprint – 140 /in2
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V048F020T080
V048F020T080
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sg3526 application note
Abstract: SG3526 oscillator diagram application note sg3526 SG1526 SG3526 sg1526 power supply 12-13V
Text: SG1526/SG2526/SG3526 SILICON G EN B^L LINEAR IN TEGR ATED CIRCUITS REGULATING PULSE WIDTH MODULATOR D E S C R IP T IO N FEA TU R ES The SG1526 is a high performance monolithic pulse width modulator circuit designed for fixed-frequency switching regulators and other power
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SG1526
18-pin
SG1526F/883B
SG1526F
20-PIN
SG1526L/883B
SG1526L
11S61
sg3526 application note
SG3526 oscillator diagram
application note sg3526
SG3526
sg1526 power supply
12-13V
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