diode MARKING CODE sg
Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"
|
Original
|
RB520S-30
OD-523
OD-523
diode MARKING CODE sg
marking code SG
diode sg 03
sg diode code marking
MARKING CODE sg 06
SG DIODE
RB520S-30
MARKING SG
diode marking sg
code sg
|
PDF
|
SG DIODE
Abstract: diode sg-64 diode sg 71
Text: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1
|
Original
|
W83773G/SG
W83773G
W83773SG
SG DIODE
diode sg-64
diode sg 71
|
PDF
|
teledyne relay 412 screening
Abstract: TELEDYNE RELAYS DATE CODE teledyne diode Teledyne Relays 412 marking code 351 diode TELEDYNE 412
Text: TELEDYNE RELAYS Page 1 of 40 DETAIL SPECIFICATION FOR HIREL 412 RELAYS RELAYS, HIGH RELIABILITY, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION TR-HIREL-1/412
|
Original
|
TR-HIREL-1/412
teledyne relay 412 screening
TELEDYNE RELAYS DATE CODE
teledyne diode
Teledyne Relays 412
marking code 351 diode
TELEDYNE 412
|
PDF
|
TELEDYNE RELAYS DATE CODE
Abstract: No abstract text available
Text: TELEDYNE RELAYS Page 1 of 43 Feb 21, 2006 11:30 am DETAIL SPECIFICATION FOR HIREL 412V RELAYS RELAYS, HIGH RELIABILITY, HIGH VIBRATION, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND
|
Original
|
TR-HIREL-1/412V
TELEDYNE RELAYS DATE CODE
|
PDF
|
marking code SG transistors
Abstract: LNE150 LNE150K1 LNE150ND diode MARKING CODE sg
Text: – – E T E LNE150 OBSOL Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code
|
Original
|
LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
OT-23.
marking code SG transistors
LNE150
LNE150K1
LNE150ND
diode MARKING CODE sg
|
PDF
|
LNE150
Abstract: LNE150K1 LNE150ND
Text: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code
|
Original
|
LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
OT-23.
LNE150
LNE150K1
LNE150ND
|
PDF
|
8.22 diode marking code
Abstract: mos n-channel SOT-23 LNE150 LNE150K1 LNE150ND diode code 10 marking code SG transistors
Text: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code
|
Original
|
LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
OT-23.
8.22 diode marking code
mos n-channel SOT-23
LNE150
LNE150K1
LNE150ND
diode code 10
marking code SG transistors
|
PDF
|
SMD MARKING CODE sg
Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Text: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top
|
Original
|
SB520WT
OD-523
OD-523
SMD MARKING CODE sg
diode MARKING CODE sg
smd diode marking sG
MARKING CODE sg 06
diode sg 01
diode smd marking code SG
SG DIODE MARKING
diode smd code SG
sg smd code
smd "code rc" transistor
|
PDF
|
RB520S-30
Abstract: diode MARKING CODE sg diode sg 5 ts
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode
|
Original
|
RB520S-30
OD-523
160Hz
OD-523
RB520S-30
diode MARKING CODE sg
diode sg 5 ts
|
PDF
|
diode sg 5 ts
Abstract: diode MARKING CODE sg diode sg 12 SG DIODE MARKING RB520S-30 diode sg 01 diode sg 03
Text: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode
|
Original
|
RB520S-30
OD-523
160Hz
OD-523
diode sg 5 ts
diode MARKING CODE sg
diode sg 12
SG DIODE MARKING
RB520S-30
diode sg 01
diode sg 03
|
PDF
|
sg 421
Abstract: MBRF20150CT MBRF20100CT CODE DIODE diode MARKING A1 MBRF20200CT TO-220FP MBRF20200CT diode MARKING CODE sg
Text: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device
|
Original
|
O-220FP
20xxxCT
MIL-STD-750,
DB-100
sg 421
MBRF20150CT
MBRF20100CT
CODE DIODE
diode MARKING A1
MBRF20200CT TO-220FP
MBRF20200CT
diode MARKING CODE sg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device
|
Original
|
O-220FP
20xxxCT
MIL-STD-750,
DB-100
|
PDF
|
MBRF20100ct
Abstract: MBRF20200CT MBRF20150CT
Text: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device
|
Original
|
MIL-STD-750,
O-220FP
20xxxCT
DB-100
MBRF20100ct
MBRF20200CT
MBRF20150CT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low
|
Original
|
SGM2021
SGM2021
300mA
|
PDF
|
|
|
diode MARKING CODE sg
Abstract: SD107WS-7 SD107WS J-STD-020A MARKING SG marking code SG code sg
Text: SD107WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOD-323 Mechanical Data · · · · · · · Case: SOD-323, Plastic
|
Original
|
SD107WS
OD-323
OD-323,
J-STD-020A
MIL-STD-202,
SD107WS-7
3000/Tape
com/datasheets/ap02007
DS30129
diode MARKING CODE sg
SD107WS-7
SD107WS
J-STD-020A
MARKING SG
marking code SG
code sg
|
PDF
|
diode MARKING CODE sg
Abstract: code sg sg diode code marking SG DIODE MARKING
Text: SD107WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOD-323 Mechanical Data · · · · · · · Case: SOD-323, Plastic
|
Original
|
SD107WS
OD-323
OD-323,
J-STD-020A
MIL-STD-202,
SD107WS-7
3000/Tape
com/datasheets/ap02007
DS30129
diode MARKING CODE sg
code sg
sg diode code marking
SG DIODE MARKING
|
PDF
|
marking AGs sot-23
Abstract: No abstract text available
Text: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code
|
OCR Scan
|
LNE150
O-236AB*
LNE150K1
LNE150ND
forTO-236AB:
OT-23.
500nA
100S2,
7732RS
G0042S2
marking AGs sot-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Supertex inc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* Die NEE* 500V 1.0K& 3.0mA LNE150K1 LNE150ND where * = 2-week alpha date code
|
OCR Scan
|
LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
500nA
|
PDF
|
supertex dmos
Abstract: No abstract text available
Text: Supertexinc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N Order Number / Package ' d (ON) BVDOs (max) (min) TO-236AB* 500V 1.0K£1 3.0mA LNE150K1 Product marking for TO-236AB: Die NEE* LNE150ND where * = 2-week alpha date code
|
OCR Scan
|
LNE150
O-236AB*
LNE150K1
LNE150ND
O-236AB:
OT-23.
300ns
supertex dmos
|
PDF
|
DA108S1
Abstract: No abstract text available
Text: SGS-IHOMSON •Hiera «! Application Specific Discretes A.S.D. DA108S1 DA112S1 D IO D E A R R A Y APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. FUNCTIONAL DIAGRAM : DA108S1 FEATURES
|
OCR Scan
|
DA108S1
DA112S1
IEC1000-4-22
DA108S1
|
PDF
|
diode marking code 7-7-7-7
Abstract: LCP15XX device marking sgl
Text: SGS-IHOMSON LCP150S •m Application Specific Discretes A.S.D. PROGRAM M ABLE TRANSIENT VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES ■ DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR ■ HIGH SURGE CURRENT CAPABILITY. - Ip p = 50A, 10/1000 |J,S. - Ip p = 60 A, 5/310 OS.
|
OCR Scan
|
LCP150S
diode marking code 7-7-7-7
LCP15XX
device marking sgl
|
PDF
|
Untitled
Abstract: No abstract text available
Text: S G S -ÏH O M S O N KÆOœ@[EL[iûre *i SMLVT3V3 LOW VOLTAGE TRANSIL FEATURES . • ■ ■ ■ ■ UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W 10/1 OOO^s REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSETIME UL RECOGNIZED
|
OCR Scan
|
DO-214AA)
|
PDF
|
THDT58D
Abstract: breakover device diode sg 38 diode MARKING CODE sg thDT
Text: Si 30 E » H 7 ^ 2 3 7 0G 32 G 24 S• SGS-THOMSON ¡ÛLUgim«! SG S -T H O M S O N THDT 58 D TRISIL DESC RIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, It enables to protect integrated SLIC against
|
OCR Scan
|
D89THDT58DP4
THDT58D
breakover device
diode sg 38
diode MARKING CODE sg
thDT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION
|
OCR Scan
|
ADB18PS
ADB18PS
|
PDF
|
