ISO STANDARDS SHEET METAL THINNING
Abstract: TRANSISTOR SUBSTITUTION 1993 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SGS-Thomson zener smd eurotherm ST marking code crolles eurotherm 451 ALL TYPE IC DATA AND manual substitution BOOK IEC 68-2-27 spectrometer U.S.A Eurotherm Controls
Text: SURE 7 Semiconductor Users Reliability Evaluation Quality and Reliability Program Published by SGS-THOMSON Quality and Reliability Management “YOU HAVE MY WORD ON IT” As I noted in SURE 6, service is the number one strategic priority at SGS-THOMSON. We consider service as a
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mosfet pal 007 pioneer
Abstract: PAL 007 pioneer mosfet valeo alternator bosch relay equivalent 0 280 230 005 Thomson-CSF* relay bosch alternator Pioneer MOSFET 007 BOSCH 281 005 019 NIPPONDENSO CO LTD bosch 0 281 002 667
Text: [sa] Cover 7/2/97 3:54 PM Page 1 SGS-THOMSON MICROELECTRONICS ® 1996 A NNUAL R EPORT ANNUAL REPORT [sa] Narr. IFC-17 7/3/97 1:53 PM Page IFC2 > SGS-THOMSON Microelectronics N.V. is a global independent semiconductor company that produces a broad range of semiconductor integrated circuits ICs and discrete devices.
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Untitled
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 #. MISfSmiraMO ! TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped
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IRF450,
BUZ45,
BUZ21
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to
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TSD2903
TSD2903
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LI 20 AB
Abstract: TSD2904 SGS 7301 M113
Text: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2904
TSD2904
LI 20 AB
SGS 7301
M113
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2922
TSD2922
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TSD2903
Abstract: TSD2902 25x2mA
Text: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2902
TSD2902
TSD2903
25x2mA
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Untitled
Abstract: No abstract text available
Text: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to
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TSD2921
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2922
TSD2922
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MOSFET Termination Structure
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands
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STVHD90.
STVHD90
MOSFET Termination Structure
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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Untitled
Abstract: No abstract text available
Text: r= 7 SGS-THOMSON ^ 7 TSD2902 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2902
TSD2902
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TSD2921
Abstract: No abstract text available
Text: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to
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TSD2921
TSD2921
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Untitled
Abstract: No abstract text available
Text: r=7 ^ 7 SGS-THOMSON TSD2900 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to
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TSD2900
TSD2900
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP5N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP5N07 . . . . . . . . . . V clamp RDS(on) 11im 70 V 0 .2 a. 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP5N07
O-220
VNP5N07
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON LPR30 LOW DROP VOLTAGE REGULATOR DRIVE FOR EXTERNAL N-CHANNEL POWER MOSFET . VERY LOW DROPOUT POWER MOSFET DRIVER . HIGH PRECISION Vref = 2.5V ± 1% . VERY LOW CURRENT DRAIN (TYP. 2mA) . REFERENCE OUTPUT CURRENT UP TO 20mA . OPERATING SUPPLY VOLTAGE FROM 5V
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LPR30
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VNP10N07 equivalent
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP10N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP10N07 . . . . . . . . . . V clamp 70 V RDS(on) 0.1 a. 11im 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP10N07
O-220
VNP10N07
VNP10N07 equivalent
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LF157
Abstract: LF355L LF356 pin diagram LF355-LF356-LF357
Text: LF155 - LF255 - LF355 LF156 - LF256 - LF356 iy LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS SGS-THOMSON • REPLACE HYBRID AND MODULE FET OP AMPs ■ RUGGED J-FETs ALLOW BLOW-OUT FREEHANDLING COMPARED WITH MOSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE
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LF155
LF156
LF157
7T5TE37
LF355L
LF356 pin diagram
LF355-LF356-LF357
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP28N04 . . . . . . . . . . V clamp RDS(on) 11im 42 V 0 . 0 3 5 Û. 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP28N04
O-220
VNP28N04
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP20N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP20N07 . . . . . . . . . . V clamp RDS(on) 11im 70 V 0 .0 5 a . 20 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP20N07
O-220
VNP20N07
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VNH70N07
Abstract: No abstract text available
Text: rz7 ^7# SGS-THOMSON ¡Mn<E[Mi|[LiCTiF3 öl@ VNH70N07 ’’OMNIFET”: _ FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE VNH70N07 . . . . . . . . . . Vclamp R D S o n llim 70 V 0.015 n 70 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNH70N07
VNH70N07
O-218
O-218
DD77D14
OT-93)
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IILICTIs! iD©S VNP14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP14N04 . . . . . . . . . . V clamp RDS(on) 11im 42 V 0 .0 7 a. 14 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP14N04
O-220
VNP14N04
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Untitled
Abstract: No abstract text available
Text: Zjï SGS-THOMSON ¡ILIßTI^OKinei STW38NB20 N - CHANNEL ENHANCEMENT MODE _PowerMESH MOSFET PRELIM IN ARY DATA TYPE STW 38N B 20 . . . . . . . V dss RDS on Id 200 V < 0.065 Q. 38 A TYPICAL R D S (on) = 0.052 £2 EXTREMELY HIGH dv/dt CAPABILITY
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STW38NB20
O-247
P025P
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Untitled
Abstract: No abstract text available
Text: r= 7 SGS-THOMSON *JW. HD g[^ i[Li(gra©[iSll(gI L9380 TRIPLE HIGH-SIDE MOSFET DRIVER • OVERVOLTAGE CHARGE PUMP SHUT OFF FOR Vvs > 25V ■ REVERSE BATTERY PROTECTION (REFER RING TO THE APPLICATION CIRCUIT DIA GRAM ■ PROGRAMMABLE OVERLOAD PROTEC
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L9380
L9380
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