Untitled
Abstract: No abstract text available
Text: 3D E 3> • 7^537 OOE'îW b ■ ^ 3 » ^ - CT7 S G S-THOMSON S C S - T H O M S O - N id E g lT M M K g S S G S P 3 0 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS on SGSP301 100 V 1.4 Î2 Id 2.0 A HIGH SPEED SWITCHING APPLICATIONS
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OCR Scan
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SGSP301
T-39-07
SC-000B/1
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PDF
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Untitled
Abstract: No abstract text available
Text: fZ 7 *7# SUO g»[i[Lll(gra RiO(gi GS-THOMSON SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 5 2 x 5 3 mils Al A u /C r/N i/A u
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OCR Scan
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SGSP301
MC-0377
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PDF
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sgsp301
Abstract: No abstract text available
Text: SGS-THOMSON ¡y SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: 52x53 mils • METALLIZATION: Al Top Back Au /C r /NI /Au • BACKSIDE THICKNESS: 6100 Â 16 ± 2 mils • DIE THICKNESS: P-Vapox • PASSIVATION: • BONDING PAD SIZE:
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SGSP301
52x53
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Transistor B C 458
Abstract: sgsp301
Text: / = 7 SGS-THOMSON ^7Æ» KlD g»ll[L[l(gre ROD(gi SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP301 100 V • • • • ^DS(on 1.4 fi 2.0 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE
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OCR Scan
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SGSP301
O-220
Transistor B C 458
sgsp301
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Untitled
Abstract: No abstract text available
Text: 3DE D • 7^2^37 0030144 S G S -T H O M S O N 5 ■ s « i LEg¥^(QM(gS ( s- t h o k o h _ _ SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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SGSP301
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PDF
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sgsp301
Abstract: No abstract text available
Text: Æ 7 SGS-THOM SON SGSP301 R jflO M [l[UI TrM O gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on Id SGSP301 100 V 1.4 n 2.0 A • HIGH SPEED SW ITCHING APPLICATIO NS • G EN E R AL PURPOSE APPLICATIO NS • ULTR A FAST SW ITCHING
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SGSP301
25OyA
sgsp301
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PDF
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ISOWATT220
Abstract: No abstract text available
Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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O-220
ISOWATT220
ISOWATT22Q
STH107N50
STH10N50
STHI10N50
STHI10N50FI
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PDF
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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OCR Scan
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P-220
ISOWATT220
O-220
O-220
STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
sgs*P381
ISOWATT218 IGBT
STLT20
MTP3055AFI
SGSP381
IRFP453FI
SGSP579
SGSP591
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PDF
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diode sg 87
Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Text: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate
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SGSP101/P102
SGSP201/P202
301/P30Z
SP301
SP302
E--03
SGSP101/P102
SGSP301/P302
1728J
diode sg 87
P302T
SGSP101
GS3J
P302
SGSP
sgsp302
p102
capacitance SG 21
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SGSP321
Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
Text: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*
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MTP3055AFI
STLT20*
STLT20FI
SGSP321
IRF153
IRFP153
IRFP153FI
STLT30*
SGSP381
SGSP481
sgs*P381
SGSP201
STLT20
STLT20FI
BUZ11S2FI
SGSP591
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PDF
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substitu bipolar transistors
Abstract: No abstract text available
Text: iC T SCS-THOMSON * 7 #. 68S0 gC? liLS TO©raO©S TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup plies. H.F. welding systems, industrial ovens, re lay drivers and other similar applications. These
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PDF
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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PDF
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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OCR Scan
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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PDF
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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OCR Scan
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STHI07N50
STHI07N50FI
STHI10N50
STHI10N50FI
O-220
ISOWATT22Û
ISOWATT22Q
ISOWATT220
MTP3055AFI
IRF722FI
IRFP453FI
SGSP579
SGSP591
SGS35MA050D1
SGSP382
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IRFZ42 equivalent
Abstract: tdk P2616 P2616 BUX12 UC3840
Text: / = 7 SGS-THOMSON * 7 * , . 6 [L tlC T tM M ! A PPLICA TIO N NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control.
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SGSUC3840
SGS2N2222A
SGS2N2907
SGSP301
IRFZ42
BUX12
350pF
220pF
IRFZ42 equivalent
tdk P2616
P2616
UC3840
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PDF
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bow94c
Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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OCR Scan
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IRF530FI
SGSP361
SGSP461
BUZ21
BUZ25
IRF142
IRF542
IRF542FI
IRF152
IRFP152
bow94c
BOW93C
SGSP591
MTP3055A
SGSD93G
SGSP381
SMD SJ 87
b0334
BUZ10
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PDF
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sgsp311
Abstract: substitu bipolar transistors sgsp331 sgsp531 10a 400v bipolar transistor
Text: r z 7 ^ 7 § S G S - m o M S O N M g [M & (I(g T[M iiO (gS TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup plies. H.F. welding systems, industrial ovens, re lay drivers and other similar applications. These
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OCR Scan
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PDF
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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OCR Scan
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O-220
ISOWATT220
ISOWATT220
STH107N50
STH10N50
STHI10N50
STHI10N50FI
ISOWATT-220
mtp15n05
BU210A
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PDF
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siemens r10 core
Abstract: P2616 300w 20A rf amplifier flyback transformer lg tdk P2616 UC3840
Text: F= 7 SCS-THOMSON APPLICATION NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control. The Power switch is designed around an emitter
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OCR Scan
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SGSUC3840
SGS2N2222A
SGS2N2907
SGSP301
IRFZ42
BUX12
350pF
220pF
siemens r10 core
P2616
300w 20A rf amplifier
flyback transformer lg
tdk P2616
UC3840
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PDF
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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OCR Scan
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OT-82
OT-194
SGSP222
SGSP201
SGSP230
SGSP239
O-220
SGSP358
MTP15N05L
STLT19
sgs*P381
IRFp150 To3 package
bu245a
BR 1300
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PDF
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IRF521
Abstract: SGSP461 SGSP591 IRF540 smd SGSP381 IRF540FI sgsp321 BUZ11S2FI SGSP462 t0218
Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36
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OCR Scan
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IRF523
IRF523FI
IRF521
IRF521FI
IRF533
IRF533FI
IRF531
IRF531FI
IRF543
IRF543FI
SGSP461
SGSP591
IRF540 smd
SGSP381
IRF540FI
sgsp321
BUZ11S2FI
SGSP462
t0218
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PDF
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