SGSP477 Search Results

SGSP477 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
SGSP477	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
SGSP477	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
SGSP477	STMicroelectronics	Shortform Data Book 1988	Short Form	PDF
SGSP477	STMicroelectronics	N-Channel Enhancement Mode Power MOS Transistor	Scan	PDF
SGSP477CHIP	STMicroelectronics	N-Channel Enhancement Mode Power MOS Transistor in Die Form	Scan	PDF

SGSP477 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
buz350 mosfet Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20 Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34	Original	2100p 1800p IAFJ240 BUZ37 BUZ31 BUZ34 IXTL15N20 MTH15N20 MTM15N20 buz350 mosfet DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20	PDF
Untitled Abstract: No abstract text available Text: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils	OCR Scan	D0301SD SGSP477 18x18	PDF
SGSP477 Abstract: No abstract text available Text: SGS-THOMSON m SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: • METALLIZATION: Top Back 221 x 221 mils Al - max 7 mils M s P-Vapox 5 6 x 4 3 mils 18 x 18 mils c T 16 ± 2 mils • RECOMMENDED WIRE BONDING: Gate 6100 Â	OCR Scan	SGSP477 MC-0076	PDF
SGSP477 Abstract: No abstract text available Text: f Z 7 SGS-THOMSON SGSP477 CHIP ^ 7 # llD æ O IlL lK g T O R O D Ê i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils	OCR Scan	SGSP477 MC-0076	PDF
sgsp477 Abstract: MC-0076 Text: /S T SGS-THOMSON 1 # ^ s - THoMSON SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM 'D IE SIZE: 221 x221 mils • METALLIZATION: Top Al Back A u /C r/N i/A u ' BACKSIDE THICKNESS: 6100 A 1 DIE THICKNESS: 16 ± 2 mils ’ PASSIVATION:	OCR Scan	SGSP477 56x43 18x18 MC-0076 T-oy-11 MC-0076	PDF
transistor di 556 Abstract: SGSP477 Text: T SGS-THOMSON ^7# MÊfôimiiËïrMMÊI SGSP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on SGSP477 200 V 0.17 fi Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING	OCR Scan	SGSP477 O-218 transistor di 556 SGSP477	PDF
SGSP477 Abstract: No abstract text available Text: 3QE D • 7 ci 2 ci 2 3 7 QÜ3QQ35 f Z 7 S G S -T H O M S O N ^ 7 # [ ¡ « [ ^ » Ë ig T M l O t g S □ ■ 'T - 3 9 H 3 * g s -t h o m s o n S G S P 477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS on b SGSP477 200 V 0.17 ß 20 A	OCR Scan	3QQ35 SGSP477 SC-0008/1 SGSP477	PDF
SGSP477 Abstract: bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit Text: f Z 7 SGS-THOMSON s6 s - th o m s o n ^7# SG SP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 VDss 200 V ^D S on 0.17 ß b 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING	OCR Scan	SGSP477 SGSP477 bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit	PDF
D2080 Abstract: SGSP477 Text: SGS-TUOMSON SGSP477 llö » [ a i g ir C M O ( g § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 V dss 200 V ^DS(on 0.17 n •d 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING	OCR Scan	SGSP477 SGSP477 O-218 D2080	PDF
IRF740 smd Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1 Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36	OCR Scan	IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1	PDF
ISOWATT220 Abstract: No abstract text available Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30	OCR Scan	O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI	PDF
sgs*P381 Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591 Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177	OCR Scan	P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591	PDF
IRF722P Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10 Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313	OCR Scan	2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10	PDF
1M4148 Abstract: 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093 Text: /T T SGS-THOMSON * 7# . [ f f lD S S & IC T M S O g i TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION The bridge-leg is an important building block for many applications such as drives and switch-mode	OCR Scan	00V/DIV 1M4148 1N41448 1M4148 diode BC327 circuit example 12-0-12 1A transformer Transistor BC327 Q1 12-0-12 transformer design 12-0-12 transformer used 12v dc supply BC337 circuit example HCF4093	PDF

sgsp473 Abstract: RS2040 sgsp573 SGSP477 Text: S G S-THOMSON G?E J> g 7^5^53? dOl?^ ^ g : 73C 17426 D /•3^13 \{\l% S6SP473/P573 1 n Pi N-OHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIOIMS These products are diffused m ulti-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.	OCR Scan	S6SP473/P573 SGSP477/P577 OT-93 SGSP473 SGSP573 SGSP477 SGSP577 C-155 0Q17c SGSP473/P573 RS2040	PDF
TSD4M450V Abstract: TSD4M250V IRF740 smd Isotop SGS100MA010D1 SGSP363 TSD4M150V IRF621 IRF621FI IRF622 Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100	OCR Scan	IRFP150 IRFP150FI SGS100MA010D1 TSD4M150V SGS150MA010D1 IRF623 IRF623FI IRF621 IRF621FI IRF622 TSD4M450V TSD4M250V IRF740 smd Isotop SGSP363	PDF
ISOWATT220 Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382 Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00	OCR Scan	STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI O-220 ISOWATT22Û ISOWATT22Q ISOWATT220 MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382	PDF
sgs*P381 Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239 Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50	OCR Scan	OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239	PDF
BZX85C15V Abstract: 1N41448 p477 1M4148 p 477 mosfet discrete totem pole CIRCUIT hcf4093 TYPICAL APPLICATION Text: rz7 SGS-THOMSON ^ 7 Mrn ^D K©[l[Li©¥[^ Q R!]0©§ TECHNICAL NOTE NOVEL PROTECTION AND GATE DRIVES FOR MOSFETs USED IN BRIDGE-LEG CONFIGURATIONS INTRODUCTION Fig. 1 - B ridge configurations The bridge-leg is an im portant building block for many applications such as drives and switch-mode	OCR Scan	00V/DIV BZX85C15V 1N41448 p477 1M4148 p 477 mosfet discrete totem pole CIRCUIT hcf4093 TYPICAL APPLICATION	PDF
IRFP 740 Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7	OCR Scan	IRF742FI IRF740 IRF740FI SGSP475 SGSP575 IRF350 IRFP350FI TSD4M350V IRF823 IRF823FI IRFP 740 SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M351V 220 to 110 power	PDF
IRF740 "direct replacement" Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120 Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace	OCR Scan	IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120	PDF
ISOWATT-220 Abstract: mtp15n05 BU210A ISOWATT220 Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00	OCR Scan	O-220 ISOWATT220 ISOWATT220 STH107N50 STH10N50 STHI10N50 STHI10N50FI ISOWATT-220 mtp15n05 BU210A	PDF
sgsP381 Abstract: IRFp150 To3 package bu245a BR 1300 Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50	OCR Scan	OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 IRFp150 To3 package bu245a BR 1300	PDF
IRF740 smd Abstract: TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF621 IRF621FI IRF622 IRF622FI Text: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100	OCR Scan	IRFP150 IRFP150FI SGS100MA010D1 TSD4M150V SGS150MA010D1 IRF623 IRF623FI IRF621 IRF621FI IRF622 IRF740 smd TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF622FI	PDF

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SGSP477 Search Results

SGSP477 Datasheets (5)

SGSP477 Datasheets Context Search

buz350 mosfet

Untitled

SGSP477

SGSP477

sgsp477

transistor di 556

SGSP477

SGSP477

D2080

IRF740 smd

ISOWATT220

sgs*P381

IRF722P

1M4148

sgsp473

TSD4M450V

ISOWATT220

sgs*P381

BZX85C15V

IRFP 740

IRF740 "direct replacement"

ISOWATT-220

sgs*P381

IRF740 smd