shockley diode
Abstract: No abstract text available
Text: 420 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)160 V(BO) Max. (V)240 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)120 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
|
Original
|
Current500u
StyleAxial-10
shockley diode
|
PDF
|
shockley diode
Abstract: No abstract text available
Text: 1N3490 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current45m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m
|
Original
|
1N3490
Current45m
StyleDO-204AA
NumberTY00200003
shockley diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3836 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
|
Original
|
1N3836
Current15m
StyleDO-204AA
NumberTY00200003
|
PDF
|
shockley diode
Abstract: No abstract text available
Text: 480 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)640 V(BO) Max. (V)960 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)480 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
|
Original
|
Current500u
StyleAxial-10
shockley diode
|
PDF
|
P-Channel Depletion Mode FET
Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic
|
Original
|
AN101
P-Channel Depletion Mode FET
p channel depletion mosfet
an101 siliconix
N-Channel JFET FETs
JFETs Junction FETs
Junction FETs JFETs
list of n channel fet
n channel depletion MOSFET
Depletion MOSFET
depletion
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UF100C Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
|
Original
|
UF100C
Current50m
StyleTO-204AAvar
NumberTY00200003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UF100B Thyristors Four-Layer Shockley Diode V(BO) Min. (V)85 V(BO) Max. (V)115 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)115 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
|
Original
|
UF100B
Current50m
StyleTO-204AAvar
NumberTY00200003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3837 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
|
Original
|
1N3837
Current15m
StyleDO-204AA
NumberTY00200003
|
PDF
|
shockley diode
Abstract: No abstract text available
Text: 470 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
|
Original
|
Current500u
StyleAxial-10
shockley diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 450 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)400 V(BO) Max. (V)600 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)300 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
|
Original
|
Current500u
StyleAxial-10
|
PDF
|
15LL50-1
Abstract: No abstract text available
Text: Technical Data Sheet Economy Vector Network Analyzers MS46322A Series ShockLine Economy Vector Network Analyzers Introduction The MS46322A is part of the ShockLine™ family of Vector Network Analyzers from Anritsu. It is a low-cost series of 2U high, 2-port Economy
|
Original
|
MS46322A
15LL50-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3846 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
|
Original
|
1N3846
Current50m
StyleDO-204AA
NumberTY00200003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
|
Original
|
1N3840
Current50m
StyleDO-204AA
NumberTY00200003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3936 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current11m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m
|
Original
|
1N3936
Current11m
StyleDO-204AA
NumberTY00200003
|
PDF
|
|
|
shockley diode
Abstract: No abstract text available
Text: T40R06220300 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k
|
Original
|
T40R06220300
Current100m
NumberTY00200003
shockley diode
|
PDF
|
shockley diode
Abstract: No abstract text available
Text: UF100A Thyristors Four-Layer Shockley Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)120 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
|
Original
|
UF100A
Current50m
StyleTO-204AAvar
NumberTY00200003
shockley diode
|
PDF
|
p channel depletion mosfet
Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the
|
Original
|
AN101
p channel depletion mosfet
list of n channel fet
P-Channel Depletion Mode FET
shockley diode
Depletion MOSFET 6D
n channel depletion MOSFET
list of n channel MOSFET
P-Channel Depletion Mode Field Effect Transistor
depletion p mosfet
P-Channel Depletion Mosfets
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 460 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)480 V(BO) Max. (V)720 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)360 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
|
Original
|
Current500u
StyleAxial-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3845 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
|
Original
|
1N3845
Current50m
StyleDO-204AA
NumberTY00200003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 430 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)240 V(BO) Max. (V)360 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)180 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
|
Original
|
Current500u
StyleAxial-10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technical Data Sheet Vector Network Analyzers MS46524A Series ShockLine Vector Network Analyzers Introduction The MS46524A is part of the ShockLine™ family of Vector Network Analyzers from Anritsu. It is a low-cost series of 4-port RF Vector Network Analyzers. It is available in two frequency ranges: 10 MHz to 4.5 GHz and 10 MHz to 7 GHz. It is capable of measuring 16 single-ended and
|
Original
|
MS46524A
|
PDF
|
shockley diode application
Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has
|
OCR Scan
|
8000/nominal
shockley diode application
shockley diode
shockley diode applications
1N3835
2sc 945 p transistor
diode shockley
1N3837
shockley diode high voltage and high current
shockley
clevite
|
PDF
|
shockley diode
Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
Text: MICROWAVE DIODE CORPORATION , , «3831 IN3846 • h -, SILICON PLANAR THYRISTOR DIODES lOOO Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA. u PACKAGE OUTLINE ELECTRI CAL PA RA M ETERS Type Switching Voltage Vg V Holding Cutrent IH (mA)
|
OCR Scan
|
IN3831
IN3846
IN3832
IK3833
IN3834
IK3835
IN3836
IN3837
IN3838
shockley diode
diode shockley
shockley
1n3842
shockley diode 1N3842
|
PDF
|
shockley diode
Abstract: shockley diode shockley four layer diode shockley diode datasheet Thyristor Shockley curve tracer IN3831 Thyristor diodes IN3833
Text: www.DataSheet.in M IC R O W A V E D IO D E C O R P O R A T IO N THROUGH SILICON PLANAR THYRISTOR DIODES 1.000 IMH 025 0 535B Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA, PACKAGE OUTLINE
|
OCR Scan
|
M3831
N3846
IN3831
IN3832
IN3833
IN3834
IN3835
IN3836
IN3837
IN3838
shockley diode
shockley
diode shockley
four layer diode
shockley diode datasheet
Thyristor Shockley
curve tracer
Thyristor diodes
|
PDF
|