RFHA1023
Abstract: SEMICONDUCTOR J598
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023
RFHA1023
DS110630
SEMICONDUCTOR J598
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SEMICONDUCTOR J598
Abstract: rfha
Text: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023A
15dBm
RFHA1023A
DS110622
SEMICONDUCTOR J598
rfha
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c11cf
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA10k
DS120508
c11cf
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Untitled
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
DS120508
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SEMICONDUCTOR J598
Abstract: No abstract text available
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse
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RFHA1023
RFHA1023
DS120508
SEMICONDUCTOR J598
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rfha1020
Abstract: No abstract text available
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation
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RFHA1020
RFHA1020
DS110719
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ECJ2VB1H104K
Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF OUT VD Pin 2 GND BASE Supports Multiple Pulse
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RFHA1020
RFHA1020
DS120508
ECJ2VB1H104K
air surveillance system diagram using radar
Gan hemt transistor RFMD
28F0181-1SR-10
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lot date code samsung
Abstract: Samsung 925 GLAR94001 DIODE BBC bbc DIODE H Beam SI 1340
Text: ISSUE NO : 08083789 Rev: 000 DATE OF ISSUE : 2008. 06. 12 SPECIFICATION MODEL : SLTRGB35066B [Approved Rank : VF S , CIE(S1, S2), IV(AAA, AAB, AAC, ABA, ABB, ABC,BAA, BAB, BAC, BBA, BBB, BBC)] RGBW TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS
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SLTRGB35066B
SLTRGB35066B)
lot date code samsung
Samsung 925
GLAR94001
DIODE BBC
bbc DIODE
H Beam
SI 1340
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LCP E4008
Abstract: No abstract text available
Text: Ro VER LEA H S SI D F CO ON RE M SA E PL R IA E NT Features Applications • E6 series optional ■ Input/output of DC/DC converters ■ Unit height of 5.5 mm ■ Power supplies for: • Portable communication equipment • Camcorders • LCD TVs • Car radios
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SRR1205
SRR1205-2R5M_
SRR1205-3R3M_
SRR1205-5R0M_
SRR1205-7R5M_
SRR1205-100M_
SRR1205-120M_
SRR1205-150M_
SRR1205-180M_
SRR1205-220M_
LCP E4008
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1340FNPC
Abstract: 1340FMPC EIA-625 GR-253-CORE LT1016 TR-NWT-000468 lt1016 equivalent 108162322
Text: Data Sheet January 2000 1340-Type Lightwave Receiver • CMOS TTL link-status flag output ■ Operation at 1.3 µm or 1.55 µm wavelengths ■ Operating case temperature range of –40 °C to +85 °C Applications Operating at 1.1 µm through 1.6 µm wavelengths and at
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1340-Type
20-pin,
20-pin
GR-253-CORE)
DS00-098OPTO
DS99-072LWP)
1340FNPC
1340FMPC
EIA-625
GR-253-CORE
LT1016
TR-NWT-000468
lt1016 equivalent
108162322
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IRHF593230
Abstract: IRHF597230
Text: PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A International Rectifier’s R5TM technology provides
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IRHF597230
IRHF593230
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF593230
IRHF597230
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Untitled
Abstract: No abstract text available
Text: sony. CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description The CXB1545Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers foll owed by D type flip flops. The data select S 0-S2 inputs determine which data is enabled. The selected
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CXB1545Q-Y
CXB1545Q-Y
CXB1545QY
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Untitled
Abstract: No abstract text available
Text: CXB1544Q-Y SONY. Dual 8 : 1 Multiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S0-S2 inputs determine which data input is enabled. When
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CXB1544Q-Y
CXB1544Q-Y
32JLEN2
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Untitled
Abstract: No abstract text available
Text: son y. CXB1142Q Q uad 4 : 1 M ultiplexer with Latch Description Pin Assignment The CXB1142Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers with transparent Latched outputs. The data select So, Si inputs determine which data input is enabled. When
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CXB1142Q
CXB1142Q
830ps
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cx 770
Abstract: CXB1143Q
Text: CXB1143Q/Q-Y Sony. Quad 4 : 1 Multiplexer with D-FF Description Pin Assignment The C X B 1 14 3 Q is an ultra high speed monolithic EC L 1C, which contains four 4 : 1 multiplexers foll owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected
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CXB1143Q/Q-Y
CXB1143Q/QY
cx 770
CXB1143Q
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8DM1
Abstract: No abstract text available
Text: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When
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CXB1544Q-Y
CXB1544Q-Y
321LEN2
8DM1
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Untitled
Abstract: No abstract text available
Text: SSJatH?/Resistors fail/Resistors Summary S ^ g fc tfs tm □□IS mm •m u X O -K S MCR03 0.063W MCR10 0 100W MCR18 0.1 25W MCR25 0.25W MCR50 0.50W MCR100 1.00W X?1U X \s-X 3.3Q-1.5MQ n m 1.25X2.0X0.55 4 J (± 5 ) 22Q-33MQ E24 M M i 1.55X3.1X0.55 5 G (± 2 )
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MCR03
MCR10
MCR18
MCR25
MCR50
MCR100
22Q-33MQ
10O-22MQ
100-22MQ
6X32X055
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 50E D son y. • &3flE363 0003^37 T! P in A ss ig n m e n t The CXB1143Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers foll owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected
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3flE363
CXB1143Q
24pin
QFP-24M-S01)
32pin
QFP-32C-L01)
32pin
QFP-32M-L02)
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Untitled
Abstract: No abstract text available
Text: NEC n n - R a i i 1310m F P - L D M o d u l e O.lif OD-8344 is a high performance 13l0nm Multiple Quantum Well (MQW) LD module. This device can achieve stable operation over wide temperature range of -40 to +85 “C . An InGaAs PIN monitor photodiode is
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OD-8344
13l0nm
1310nm
OD-8344-
OD-S328B.
OD-S328B)
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QLM3S882-005
Abstract: No abstract text available
Text: LASERTRON S3Ö3 3SS 45E D INC QQDDSIa'i 2 H L S R T *-V / “ £>7 Q3LÊPJ33S3 2 • ■ ■ ■ ■ 1.6 mW Analog Laser Analog/CATV performance 1.6 mW rated output power 1300 nm wavelength Specified CNR, CSO, CTB characteristics Cooled 14-pin DIL package, single-mode fiber
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PJ33S3
14-pin
QLM3S882
14-p25
QLM3S882-005
QLM3S882-005
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Untitled
Abstract: No abstract text available
Text: S ON Y CORP/COMPONENT PRODS 50E D A3fl23fl3 OOOMOCm b «SONY CXB1544Q-Y SO N Y. Dual 8 : 1 M ultiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8 : 1 multiplexers with transparent Latched outputs. The data select S 0-S2
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A3fl23fl3
CXB1544Q-Y
CXB1544Q-Y
24pin
QFP-24M-S01)
-H-00a0-C
000403D
32pin
QFP-32C-L01)
32pin
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT P RODS SOE D A3flB3fl3 0004007 1 «SONY CXB1545Q-Y SONY Dual 8 : 1 Multiplexer with D-F.F. D e scrip tio n P in A ss ig n m e n t The CXB1545Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers foll owed by D type flip flops. The data select S0-S2
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CXB1545Q-Y
CXB1545Q-Y
24pin
QFP-24M-S01)
XQfP024-H-00a0-C
32pin
QFP-32C-L01)
32pin
QFP-32M-L02)
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RS-435
Abstract: XKD99Z RS435 99zc 60-F33 un300 36F36
Text: XKD9 9 Z £ 5iJSfëE&KàS*-pt 1 & X< s i+Ä - ít-%s . Jt ï W ftSííl^Pffl . - (H a > f o s íu a s ® i t , e t s » , m î * n * S !ï e ü a s ï^ ^ S ît t ^ m . i. j s s ä b e e * § ä F f f ln S G W f f iìf f i. f C I . fe ê - S6SÎ. S S L S « W i5 ifi!a S R S , A R S I . Z K IM , ¡Œ M æ ^ îflM .
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XKD99Z
220VACÃ
12-F22
12-F26
44-4S
se-43
RS-435
XKD99Z
RS435
99zc
60-F33
un300
36F36
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PDF
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BFR106
Abstract: 2I k
Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1219
BFR106
900MHz
BFR106
2I k
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