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    SI PNP LP HF Search Results

    SI PNP LP HF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SI PNP LP HF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5910

    Abstract: Si PNP LP HF
    Text: 2N5910 Si PNP LP HF BJT 6.25 Transistors Transistors Bipolar Si PNP. 1 of 2 Home Part Number: 2N5910 Online Store 2N5910 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N5910 com/2n5910 2N5910 Si PNP LP HF PDF

    2n3644

    Abstract: max 1788 2N364
    Text: 2N3644 Si PNP LP HF BJT 17.88 Transistors Transistors Bipolar Si PN. 1 of 2 Home Part Number: 2N3644 Online Store 2N3644 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N3644 com/2n3644 2N3644 max 1788 2N364 PDF

    2N3494

    Abstract: No abstract text available
    Text: 2N3494 Si PNP LP HF BJT 12.35 Transistors Transistors Bipolar Si PN. 1 of 1 Home Part Number: 2N3494 Online Store 2N3494 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N3494 com/2n3494 2N3494 PDF

    2N3645

    Abstract: 25n60 60N60
    Text: 2N3645 Si PNP LP HF BJT 12.50 Transistors Transistors Bipolar Si PN. 1 of 2 Home Part Number: 2N3645 Online Store 2N3645 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N3645 com/2n3645 2N3645 25n60 60N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3496 Si PNP LP HF BJT 12.35 Transistors Transistors Bipolar Si PN. 1 of 1 Home Part Number: 2N3496 Online Store 2N3496 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N3496 com/2n3496 2N3496 PDF

    2N5139

    Abstract: No abstract text available
    Text: 2N5139 Si PNP LP HF BJT 0.20 Transistors Bipolar Silicon PNP Low-. 1 of 1 Home Part Number: 2N5139 Online Store 2N5139 Diodes Si PNP LP HF BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N5139 com/2n5139 2N5139 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3307 Si PNP LP HF BJT 13.39 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N3307 Online Store 2N3307 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N3307 com/2n3307 2N3307 O-72var PDF

    2N3134

    Abstract: No abstract text available
    Text: 2N3134 Si PNP LP HF BJT 62.50 Transistors Bipolar Silicon PNP Low. 1 of 1 Home Part Number: 2N3134 Online Store 2N3134 Diodes Si PNP LP HF BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N3134 com/2n3134 2N3134 PDF

    bjt specifications

    Abstract: 2N869A
    Text: 2N869A Si PNP LP HF BJT 3.92 Transistors Bipolar Silicon PNP Low-Power High-Freq. Page 1 of 2 Enter Your Part # Home Part Number: 2N869A Online Store 2N869A Diodes Si PNP LP HF BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original     		2N869A 2N869A com/2n869a bjt specifications PDF

    Untitled

    Abstract: No abstract text available
    Text: 2NL3799 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		2NL3799 Freq125M PDF

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    Abstract: No abstract text available
    Text: YTS2906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)600m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.120


    Original     		YTS2906 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT3251 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.


    Original     		MMBT3251 Freq300M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2NL3251 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.


    Original     		2NL3251 Freq300M PDF

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    Abstract: No abstract text available
    Text: 2SB1527 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.


    Original     		2SB1527 Freq250MÃ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1548 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.


    Original     		2SA1548 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: ZTX214C Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)45 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.350 h(FE) Max. Current gain.


    Original     		ZTX214C Freq200M PDF

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    Abstract: No abstract text available
    Text: ECG2358 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.


    Original     		ECG2358 Freq250M PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE2362 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.


    Original     		NTE2362 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC456C Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.800 h(FE) Max. Current gain.


    Original     		BC456C Freq300M PDF

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    Abstract: No abstract text available
    Text: MMST3906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition)40.0 h(FE) Min. Current gain.100


    Original     		MMST3906 Freq250M PDF

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    Abstract: No abstract text available
    Text: MMBT6520LT1 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)250 h(FE) Min. Current gain.30


    Original     		MMBT6520LT1 Freq40M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1559 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.


    Original     		2SA1559 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: SST4126 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.120 h(FE) Max. Current gain.360


    Original     		SST4126 Freq250M PDF

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    Abstract: No abstract text available
    Text: MPS3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.


    Original     		MPS3905 Freq200M PDF