cm 324
Abstract: No abstract text available
Text: PD-97804 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67434 550V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67434 IRHNJ63434 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω ID 3.4A 300K Rads (Si) 3.4A 2.9Ω International Rectifier’s R6TM technology provides
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Original
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PD-97804
IRHNJ67434
IRHNJ63434
90MeV/
MIL-STD-750,
MlL-STD-750,
cm 324
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PDF
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IRHNJ597230
Abstract: IRHNJ593230
Text: PD - 94046D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides
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Original
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94046D
IRHNJ597230
IRHNJ597230
IRHNJ593230
-200V,
MIL-STD-750,
MlL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-97805 IRHY67434CM 550V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number IRHY67434CM IRHY63434CM Radiation Level RDS(on) 100K Rads (Si) 3.0Ω 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides
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Original
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PD-97805
O-257AA)
IRHY67434CM
IRHY63434CM
90MeV/
O-257AA.
MIL-PRF-19500
|
PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94046D IRHNJ597230 200V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A International Rectifier’s R5TM technology provides
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Original
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94046D
IRHNJ597230
IRHNJ597230
IRHNJ593230
suc200V,
MIL-STD-750,
MlL-STD-750,
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides
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Original
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PD-97198A
2N7598U3
IRHNJ67C30
IRHNJ63C30
90MeV/
MIL-STD-750,
MlL-STD-750,
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PDF
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95837
Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
Text: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides
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Original
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PD-95837
O-257AA)
IRHY67C30CM
IRHY67C30CM
IRHY63C30CM
90MeV/
5M-1994.
O-257AA.
95837
PD-95837
RG 2006 10A 600V
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PDF
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2n7598
Abstract: 2N7598U3 IRHNJ67C30 2N75 IRHNJ63C30 PD-97198A
Text: PD-97198A 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A International Rectifier’s R6TM technology provides
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Original
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PD-97198A
2N7598U3
IRHNJ67C30
IRHNJ63C30
90MeV/
MIL-STD-750,
MlL-STD-750,
2n7598
2N7598U3
IRHNJ67C30
2N75
IRHNJ63C30
PD-97198A
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PDF
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mosfet motor dc 48v
Abstract: IRHY593034CM IRHY597034CM T0-257AA G 331
Text: PD - 94663A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597034CM 60V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHY597034CM 100K Rads (Si) 0.095Ω -18A* IRHY593034CM 300K Rads (Si) 0.095Ω -18A* International Rectifier’s R5TM technology provides
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Original
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4663A
O-257AA)
IRHY597034CM
IRHY597034CM
IRHY593034CM
5M-1994.
O-257AA.
mosfet motor dc 48v
T0-257AA
G 331
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PDF
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IRHNJ63234
Abstract: IRHNJ67234 PD-97197
Text: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides
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Original
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PD-97197
IRHNJ67234
IRHNJ63234
90MeV/
MIL-STD-750,
MlL-STD-750,
IRHNJ63234
IRHNJ67234
PD-97197
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PDF
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PD-94667C
Abstract: IRHMS67260 IRF P CHANNEL MOSFET 200V 20A IRHMS63260 ISD45A
Text: PD-94667C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
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Original
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PD-94667C
O-254AA)
IRHMS67260
IRHMS67260
IRHMS63260
90MeV/
O-254AA.
MIL-PRF-19500
PD-94667C
IRF P CHANNEL MOSFET 200V 20A
IRHMS63260
ISD45A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides
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Original
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O-257AA)
IRHY597130CM
IRHY597130CM
IRHY593130CM
5M-1994.
O-257AA.
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-94764D RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT UB IRHLUB7970Z4 60V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUB7970Z4 100K Rads (Si) 1.3Ω -0.53A IRHLUB7930Z4 300K Rads (Si) 1.3Ω -0.53A International Rectifier’s R7TM Logic Level Power
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Original
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PD-94764D
IRHLUB7970Z4
IRHLUB7930Z4
MIL-PRF-19500/255L
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PDF
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IRHMS63264
Abstract: IRHMS67264
Text: PD-96991 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67264 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS67264 100K Rads (Si) 0.041Ω IRHMS63264 300K Rads (Si) 0.041Ω ID 45A 45A International Rectifier’s R6TM technology provides
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Original
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PD-96991
O-254AA)
IRHMS67264
IRHMS67264
IRHMS63264
90MeV/
O-254AA.
MIL-PRF-19500
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PDF
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IRHYS63234CM
Abstract: IRHYS67234CM
Text: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides
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Original
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PD-97193
O-257AA)
IRHYS67234CM
IRHYS67234CM
IRHYS63234CM
90MeV/
5M-1994.
O-257AA.
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: PD-96923 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67230 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67230 IRHNJ63230 Radiation Level RDS(on) 100K Rads (Si) 0.13Ω 300K Rads (Si) 0.13Ω ID 16A 16A SMD-0.5 International Rectifier’s R6TM technology provides
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Original
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PD-96923
IRHNJ67230
IRHNJ63230
90MeV/
MIL-STD-750,
MlL-STD-750,
|
PDF
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IRHY593230CM
Abstract: IRHY597230CM T0-257AA
Text: PD - 94319A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A International Rectifier’s R5TM technology provides
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Original
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4319A
O-257AA)
IRHY597230CM
IRHY597230CM
IRHY593230CM
5M-1994.
O-257AA.
T0-257AA
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PDF
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2N7599T3
Abstract: No abstract text available
Text: PD-95837A 2N7599T3 IRHY67C30CM 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides
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Original
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PD-95837A
2N7599T3
IRHY67C30CM
O-257AA)
IRHY67C30CM
IRHY63C30CM
90MeV/
O-257AA.
MIL-PRF-19500
2N7599T3
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PDF
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IRHF593230
Abstract: IRHF597230
Text: PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A International Rectifier’s R5TM technology provides
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Original
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IRHF597230
IRHF593230
MIL-STD-750,
MlL-STD-750,
O-205AF
IRHF593230
IRHF597230
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PDF
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mev smd diode
Abstract: No abstract text available
Text: PD-96959 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67164 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67164 100K Rads (Si) RDS(on) 0.018Ω ID 56A* IRHNA63164 0.018Ω 56A* 300K Rads (Si) SMD-2 International Rectifier’s R6 technology provides
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Original
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PD-96959
IRHNA67164
IRHNA63164
90MeV/
MIL-STD-750,
MlL-STD-750,
mev smd diode
|
PDF
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IRHYS67230CM
Abstract: IRHYS63230CM PD-96925B
Text: PD-96925B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides
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Original
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PD-96925B
O-257AA)
IRHYS67230CM
IRHYS67230CM
IRHYS63230CM
90MeV/
5M-1994.
O-257AA.
PD-96925B
|
PDF
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IRHMS63160
Abstract: IRHMS67160
Text: PD-94723A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS67160 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67160 100K Rads (Si) RDS(on) 0.011Ω ID 45A* IRHMS63160 0.011Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides
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Original
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PD-94723A
O-254AA)
IRHMS67160
IRHMS67160
IRHMS63160
90MeV/
O-254AA.
MIL-PRF-19500
IRHMS63160
|
PDF
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IRF 949
Abstract: IRHNA63260 IRHNA67260
Text: PD - 94342C RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-2 IRHNA67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.028Ω 0.028Ω ID 63A 63A SMD-2 International Rectifier’s R6 technology provides
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Original
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94342C
IRHNA67260
IRHNA67260
IRHNA63260
90MeV/
controll875A/
MIL-STD-750,
MlL-STD-750,
IRF 949
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PDF
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IRHY597130CM
Abstract: IRHY593130CM T0-257AA
Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides
|
Original
|
O-257AA)
IRHY597130CM
IRHY597130CM
IRHY593130CM
5M-1994.
O-257AA.
T0-257AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD-96931 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67134 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ67134 100K Rads (Si) RDS(on) 0.088Ω ID 19A IRHNJ63134 0.088Ω 19A 300K Rads (Si) SMD-0.5 International Rectifier’s R6TM technology provides
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Original
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PD-96931
IRHNJ67134
IRHNJ67134
IRHNJ63134
90MeV/
MIL-STD-750,
MlL-STD-750,
|
PDF
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