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Vishay Siliconix SI1303DL-T1-E3 MOSFET P-CH 20V 670MA SC70-3
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DigiKey	SI1303DL-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI1303DL-T1-E3	Digi-Reel			1	1 $0.49 10 $0.49 100 $0.49 1000 $0.49 10000 $0.49	Buy Now
	SI1303DL-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	SI1303DL-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.261	Get Quote
Vishay Siliconix SI1303EDL-T1-E3 MOSFET P-CH 20V 670MA SC70-3
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DigiKey	SI1303EDL-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.16601	Buy Now
Vishay Siliconix SI1303DL-T1-GE3 MOSFET P-CH 20V 670MA SC70-3
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DigiKey	SI1303DL-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc FSI-130-03-G-D-AD-SD-K-TR Board to Board & Mezzanine Connectors 1.00 mm One-Piece Interface Free Sample
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Mouser Electronics	FSI-130-03-G-D-AD-SD-K-TR					1 - 10 - 100 - 1000 $6.54 10000 $6.54	Get Quote
Vishay Intertechnologies SI1303DL-T1-E3 Transistor; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:720Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:340Mw Rohs Compliant: Yes \|Vishay SI1303DL-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SI1303DL-T1-E3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SI1303 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
Si1303DL	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1303DL	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si1303DL SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1303DL-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3	Original	PDF
SI1303DL-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3	Original	PDF
SI1303EDL	Vishay Siliconix	MOSFETs	Original	PDF
SI1303EDL-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3	Original	PDF

SI1303 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si1303DL-T1-gE3 Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Untitled Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 11-Mar-11
AN609 Abstract: Si1303EDL Text: Si1303EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1303EDL AN609 03-May-07
Si1303DL Abstract: Si1303EDL Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code	Original	PDF	Si1303EDL OT-323 SC-70 08-Apr-05 Si1303DL
SI1303DL-T1-E3 Abstract: Si1303DL Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free	Original	PDF	Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3
Untitled Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Si1303DL Abstract: No abstract text available Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1303DL S-50151Rev. 07-Feb-05
Si1303DL Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free	Original	PDF	Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3 18-Jul-08
Untitled Abstract: No abstract text available Text: SPICE Device Model Si1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1303EDL S-72407Rev. 26-Nov-07
in 4751 Abstract: AN609 Si1303DL Text: Si1303DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1303DL AN609 22-Mar-07 in 4751
Si1303DL Abstract: No abstract text available Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1303DL 18-Jul-08
Si1303DL-T1-gE3 Abstract: Si1303DL Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08
Si1303DL Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free	Original	PDF	Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3 08-Apr-05
Si1303DL Abstract: 31 MOSFET sot-323 Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability	Original	PDF	Si1303DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 31 MOSFET sot-323

Si1303DL Abstract: Si1303EDL Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code	Original	PDF	Si1303EDL OT-323 SC-70 18-Jul-08 Si1303DL
Si1303EDL Abstract: No abstract text available Text: SPICE Device Model Si1303EDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1303EDL 18-Jul-08
SI1303DL Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability	Original	PDF	Si1303DL OT-323 SC-70 08-Apr-05
S-63639 Abstract: S-63639-Rev SI1303DL Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code	Original	PDF	Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 S-63639-Rev
Si1303DL Abstract: S-63639 Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code	Original	PDF	Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639
Untitled Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08
Si1303DL Abstract: Si1303EDL Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code	Original	PDF	Si1303EDL OT-323 SC-70 09-Nov-99 Si1303DL
Si1303DL Abstract: No abstract text available Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1303DL 29-May-01
Si1303DL Abstract: No abstract text available Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1303DL 29-May-01
Untitled Abstract: No abstract text available Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

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SI1303 Price and Stock

Vishay Siliconix SI1303DL-T1-E3

Vishay Siliconix SI1303EDL-T1-E3

Vishay Siliconix SI1303DL-T1-GE3

Samtec Inc FSI-130-03-G-D-AD-SD-K-TR

Vishay Intertechnologies SI1303DL-T1-E3

SI1303 Datasheets (7)

SI1303 Datasheets Context Search

Si1303DL-T1-gE3

Untitled

AN609

Si1303DL

SI1303DL-T1-E3

Untitled

Si1303DL

Si1303DL

Untitled

in 4751

Si1303DL

Si1303DL-T1-gE3

Si1303DL

Si1303DL

Si1303DL

Si1303EDL

SI1303DL

S-63639

Si1303DL

Untitled

Si1303DL

Si1303DL

Si1303DL

Untitled