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    SI1308EDL APPLICATION Search Results

    SI1308EDL APPLICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    SI1308EDL APPLICATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1308EDL www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si1308EDL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si1308

    Abstract: Si1308EDL-GE3 77535
    Text: Si1308EDL-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si1308EDL-GE3 AN609, TAN188 0568u 6166u 1971m 4806u 3652u 6125m 4261m si1308 77535 PDF

    S111905

    Abstract: sot363 ON Marking DS
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS)


    Original     		Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. S111905 sot363 ON Marking DS PDF

    si1308edl application

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS)


    Original     		Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 11-Mar-11 si1308edl application PDF

    SI1308EDL

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS)


    Original     		Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1308EDL www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC S • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si1308

    Abstract: SI1308EDL
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1308 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF