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Vishay Siliconix SI1922EDH-T1-GE3 MOSFET 2N-CH 20V 1.3A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1922EDH-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
RS	SI1922EDH-T1-GE3	Bulk			50	1 - 10 - 100 $0.382 1000 $0.382 10000 $0.382	Get Quote
New Advantage Corporation	SI1922EDH-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.1435	Buy Now
Vishay Siliconix SI1967DH-T1-BE3 MOSFET 2P-CH 20V 1A SC70-6
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DigiKey	SI1967DH-T1-BE3	Cut Tape	7,019		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1967DH-T1-BE3	Digi-Reel	7,019		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1967DH-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
Vishay Siliconix SI1902CDL-T1-BE3 MOSFET 2N-CH 20V 1A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1902CDL-T1-BE3	Digi-Reel	5,985		1	1 $0.58 10 $0.355 100 $0.58 1000 $0.15266 10000 $0.15266	Buy Now
	SI1902CDL-T1-BE3	Cut Tape	5,985		1	1 $0.58 10 $0.355 100 $0.58 1000 $0.15266 10000 $0.15266	Buy Now
	SI1902CDL-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.12982	Buy Now
Vishay Siliconix SI1926DL-T1-BE3 MOSFET 2N-CH 60V 0.34A SC70-6
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DigiKey	SI1926DL-T1-BE3	Cut Tape	4,724		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1926DL-T1-BE3	Digi-Reel	4,724		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1926DL-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
Vishay Siliconix SI1926DL-T1-GE3 MOSFET 2N-CH 60V 0.37A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1926DL-T1-GE3	Digi-Reel	4,200		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1926DL-T1-GE3	Cut Tape	4,200		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1926DL-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now

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SI19 Datasheets (76)

Part	Manufacturer	Description	Datasheet Type	PDF
Si1900DL	Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI1900DL	Vishay Siliconix	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI1900DL-DS	Vishay Telefunken	DS-Spice Model for Si1900DL	Original	PDF
Si1900DL SPICE Device Model	Vishay	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI1900DL-T1	Vishay Intertechnology	Dual N-Channel 30-V (D-S) MOSFET	Original	PDF
SI1900DL-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 590MA SC70-6	Original	PDF
SI1900DL-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 30V SC70-6	Original	PDF
Si1901DL	Vishay Intertechnology	P-Channel 20-V (D-S) MOSFET	Original	PDF
SI1901DL	Vishay Siliconix	P-Channel 20-V (D-S) MOSFET	Original	PDF
SI1901DL-T1	Vishay Intertechnology	P-Channel 20-V (D-S) MOSFET	Original	PDF
SI1902CDL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.1A SC-70-6	Original	PDF
SI1902CDL-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.1A SC-70-6	Original	PDF
Si1902DL	Vishay Intertechnology	Dual N-Channel 20-V (D-S) MOSFET	Original	PDF
SI1902DL	Vishay Siliconix	Dual N-Channel 20-V (D-S) MOSFET	Original	PDF

Si1902DL SPICE Device Model	Vishay	Dual N-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1902DL-T1-BE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.66A SC-70-6	Original	PDF
SI1902DL-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 660MA SC70-6	Original	PDF
SI1902DL-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 660MA SC-70-6	Original	PDF
Si1903DL	Vishay Intertechnology	Dual P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1903DL	Vishay Siliconix	MOSFETs	Original	PDF

SI19 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
si1922 Abstract: SI1922EDH Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21	Original	Si1922EDH 2002/95/EC OT-363 SC-70 Si1922EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1922	PDF
Si1905BDH Abstract: No abstract text available Text: New Product Si1905BDH Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.542 at VGS = - 4.5 V - 0.63 0.798 at VGS = - 2.5 V - 0.52 1.2 at VGS = - 1.8 V - 0.20 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS	Original	Si1905BDH OT-363 SC-70 Si1905BDH-T1-E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si1902CDL www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si1902CDL 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization:	Original	Si1926DL OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Si1902DL-T1-E3 Abstract: Si1902DL Si1902DL-T1-GE3 Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated	Original	Si1902DL 2002/95/EC OT-363 SC-70 Si1902DL-T1-E3 Si1902DL-T1-GE3 18-Jul-08	PDF
Si1926DL-T1-GE3 Abstract: SI1926DL-T1-E3 Text: Si1926DL Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 1.4 at VGS = 10 V 0.37 3.0 at VGS = 4.5 V 0.25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si1926DL 2002/95/EC OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 18-Jul-08	PDF
si1965 Abstract: No abstract text available Text: Si1965DH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 12 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) a	Original	Si1965DH 2002/95/EC OT-363 SC-70 Si1965DH-T1-E3 Si1965DH-T1-GE3 18-Jul-08 si1965	PDF
SI1912EDH-T1-E3 Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA" Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191lectual 18-Jul-08 SI1912EDH-T1-E3 Si1912EDH-T1-GE3 "MARKING CODE CA"	PDF
Si1917EDH Abstract: si1917edh-t1-e3 marking code 3K Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1917EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 si1917edh-t1-e3 marking code 3K	PDF
71080 Abstract: Si1902DL Text: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code	Original	Si1902DL OT-363 SC-70 S-20880--Rev. 10-Jun-02 71080	PDF
Si1917EDH Abstract: No abstract text available Text: SPICE Device Model Si1917EDH Dual P-Channel 12-V D-S MOSFET with Copper Leadframe Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	Si1917EDH	PDF
74340 Abstract: Si1958DH-T1-E3 Text: New Product Si1958DH Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) 1.2 nC APPLICATIONS RoHS • Load Switch for Portable Applications	Original	Si1958DH OT-363 SC-70 Si1958DH-T1-E3 08-Apr-05 74340	PDF
74398 Abstract: Si1972DH Si1972DH-T1-E3 Text: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)	Original	Si1972DH OT-363 SC-70 Si1972DH-T1-E3 08-Apr-05 74398	PDF
Si1905BDH Abstract: No abstract text available Text: SPICE Device Model Si1905BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1905BDH S-71491Rev. 23-Jul-07	PDF

Untitled Abstract: No abstract text available Text: Si1972DH Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 VDS (V) 30 Qg (Typ.) 0.91 nC • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS)	Original	Si1972DH 2002/95/EC OT-363 SC-70 Si1972DH-T1-E3 Si1972DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
SOT-363 marking CF Abstract: si1988 SI1988DH 62109 74296 Text: Si1988DH Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V a 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS	Original	Si1988DH OT-363 SC-70 Si1988DH-T1-E3 18-Jul-08 SOT-363 marking CF si1988 62109 74296	PDF
SI1958 Abstract: 74340 Si1958DH-T1-E3 061c marking s1 sot363 Text: New Product Si1958DH Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) 1.2 nC APPLICATIONS RoHS • Load Switch for Portable Applications	Original	Si1958DH OT-363 SC-70 Si1958DH-T1-E3 18-Jul-08 SI1958 74340 061c marking s1 sot363	PDF
S101-05 Abstract: AN816 SI1912EDH-T1 Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC S101-05 AN816 SI1912EDH-T1	PDF
Untitled Abstract: No abstract text available Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Untitled Abstract: No abstract text available Text: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si1902CDL 2002/95/EC OT-363 SC-70 Si1902CDLelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
marking code PB Abstract: SI1900DL-T1-E3 Si1900DL Si1900DL-T1 Text: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 D TrenchFETr Power MOSFET SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB	Original	Si1900DL OT-363 SC-70 Si1900DL-T1 Si1900DL-T1--E3 S-51614--Rev. 05-Sep-05 marking code PB SI1900DL-T1-E3	PDF
Untitled Abstract: No abstract text available Text: Si1903DL Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.995 at VGS = - 4.5 V ± 0.44 1.190 at VGS = - 3.6 V ± 0.40 1.8 at VGS = - 2.5 V ± 0.32 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1903DL 2002/95/EC OT-363 SC-70 Si1903DL-T1-E3 Si1903DL-T1-GE3 15hay 11-Mar-11	PDF
SI1902CDL Abstract: marking code pe "Switching diode" 6pin Text: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si1902CDL 2002/95/EC OT-363 SC-70 Si1902CDL-T1-GE3 11-Mar-11 marking code pe "Switching diode" 6pin	PDF
Untitled Abstract: No abstract text available Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V	Original	Si1904EDH SC-70 OT-363 SC-70 08-Apr-05	PDF

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SI19 Price and Stock

Vishay Siliconix SI1922EDH-T1-GE3

Vishay Siliconix SI1967DH-T1-BE3

Vishay Siliconix SI1902CDL-T1-BE3

Vishay Siliconix SI1926DL-T1-BE3

Vishay Siliconix SI1926DL-T1-GE3

SI19 Datasheets (76)

SI19 Datasheets Context Search

si1922

Si1905BDH

Untitled

Untitled

Si1902DL-T1-E3

Si1926DL-T1-GE3

si1965

SI1912EDH-T1-E3

Si1917EDH

71080

Si1917EDH

74340

74398

Si1905BDH

Untitled

SOT-363 marking CF

SI1958

S101-05

Untitled

Untitled

marking code PB

Untitled

SI1902CDL

Untitled