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Vishay Siliconix SI1913DH-T1-E3 MOSFET 2P-CH 20V 0.88A SC70-6
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Vishay Siliconix SI1913EDH-T1-E3 MOSFET 2P-CH 20V 0.88A SC70-6
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Vishay Siliconix SI1912EDH-T1-E3 MOSFET 2N-CH 20V 1.13A SC70-6
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	SI1912EDH-T1-E3	Digi-Reel			1	1 $0.48 10 $0.48 100 $0.48 1000 $0.48 10000 $0.48	Buy Now
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RS	SI1912EDH-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.485	Get Quote
Quest Components	SI1912EDH-T1-E3		12			1 $0.285 10 $0.285 100 $0.285 1000 $0.285 10000 $0.285	Buy Now
Vishay Siliconix SI1917EDH-T1-E3 MOSFET 2P-CH 12V 1A SC70-6
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Alliance Sensors Group GHSI-19-100-A-02-20-S SENSOR LINEAR 101.6MM CONNECTOR
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DigiKey	GHSI-19-100-A-02-20-S	Tube			1	1 $765.17 10 $765.17 100 $765.17 1000 $765.17 10000 $765.17	Buy Now

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SI191 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
Si1912EDH	Vishay Intertechnology	N-Channel 20-V (D-S) MOSFET with Copper Leadframe	Original	PDF
SI1912EDH	Vishay Siliconix	MOSFETs	Original	PDF
Si1912EDH SPICE Device Model	Vishay	N-Channel 20-V (D-S) MOSFET with Copper Leadframe	Original	PDF
SI1912EDH-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.13A SC70-6	Original	PDF
SI1913DH	Vishay Siliconix	MOSFETs	Original	PDF
Si1913DH SPICE Device Model	Vishay	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF
SI1913DH-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6	Original	PDF
Si1913EDH	Vishay Intertechnology	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF
SI1913EDH	Vishay Siliconix	MOSFETs	Original	PDF
Si1913EDH SPICE Device Model	Vishay	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF
SI1913EDH-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6	Original	PDF
Si1917EDH	Vishay Intertechnology	Dual P-Channel 12-V (D-S) MOSFET with Copper Leadframe	Original	PDF
SI1917EDH	Vishay Siliconix	Dual P-Channel 12-V (D-S) MOSFET	Original	PDF
Si1917EDH SPICE Device Model	Vishay	Dual P-Channel 20-V (D-S) MOSFET	Original	PDF

SI1917EDH-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 1A SC70-6	Original	PDF

SI191 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SI1912EDH-T1-E3 Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA" Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191lectual 18-Jul-08 SI1912EDH-T1-E3 Si1912EDH-T1-GE3 "MARKING CODE CA"	PDF
Si1917EDH Abstract: si1917edh-t1-e3 marking code 3K Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1917EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 si1917edh-t1-e3 marking code 3K	PDF
Si1917EDH Abstract: No abstract text available Text: SPICE Device Model Si1917EDH Dual P-Channel 12-V D-S MOSFET with Copper Leadframe Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	Si1917EDH	PDF
S101-05 Abstract: AN816 SI1912EDH-T1 Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC S101-05 AN816 SI1912EDH-T1	PDF
Untitled Abstract: No abstract text available Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Si1913EDH Abstract: No abstract text available Text: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS	Original	Si1913EDH SC-70 OT-363 SC-70 18-Jul-08	PDF
Si1912EDH Abstract: s0317 Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS	Original	Si1912EDH SC-70 OT-363 SC-70 18-Jul-08 s0317	PDF
71492 Abstract: Si1913EDH Text: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1913EDH 14-Feb-01 71492	PDF
Si1913EDH Abstract: No abstract text available Text: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1913EDH S-51866Rev. 12-Sep-05	PDF
Si1912EDH Abstract: Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1 Text: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated	Original	Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191 11-Mar-11 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1	PDF
Si1913EDH-T1-E3 Abstract: 3K MARKING CODE Si1913EDH Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1913EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 Si1913EDH-T1-E3 3K MARKING CODE	PDF
Si1913EDH Abstract: No abstract text available Text: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS	Original	Si1913EDH SC-70 OT-363 SC-70 S-03175--Rev. 05-Mar-01	PDF
Untitled Abstract: No abstract text available Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
marking WE SC70-6 Abstract: No abstract text available Text: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 Si1913DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking WE SC70-6	PDF

Si1912EDH Abstract: No abstract text available Text: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS	Original	Si1912EDH SC-70 OT-363 SC-70 S-03176--Rev. 05-Mar-01	PDF
Si1912EDH Abstract: 113aa Text: SPICE Device Model Si1912EDH Vishay Siliconix N-Channel 20-V D-S MOSFET with Copper Leadframe CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1912EDH 14-Feb-01 113aa	PDF
Si1913DH Abstract: No abstract text available Text: SPICE Device Model Si1913DH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si1913DH 25-Oct-02	PDF
AN609 Abstract: Si1913DH Text: Si1913DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si1913DH AN609 28-Mar-07	PDF
AN609 Abstract: Si1913EDH Text: Si1913EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si1913EDH AN609 28-Mar-07	PDF
Untitled Abstract: No abstract text available Text: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Si1912EDH Abstract: No abstract text available Text: SPICE Device Model Si1912EDH N-Channel 20-V D-S MOSFET with Copper Leadframe Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	Si1912EDH	PDF
Si1913DH Abstract: No abstract text available Text: Si1913DH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.490 @ VGS = -4.5 V -1.0 0.750 @ VGS = -2.5 V - 0.81 1.10 @ VGS = -1.8 V - 0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package	Original	Si1913DH SC-70 OT-363 SC-70 S-21482--Rev. 26-Aug-02	PDF
Untitled Abstract: No abstract text available Text: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si1913EDH SC-70 2002/95/EC OT-363 SC-70 Si1913EDH-T1-E3 Si1913EDH-T1-GE3 11-Mar-11	PDF
Si1917EDH Abstract: No abstract text available Text: Si1917EDH New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.370 @ VGS = –4.5 V –1.15 APPLICATIONS	Original	Si1917EDH SC-70 OT-363 SC-70 S-03174--Rev. 07-Mar-01	PDF

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SI191 Price and Stock

Vishay Siliconix SI1913DH-T1-E3

Vishay Siliconix SI1913EDH-T1-E3

Vishay Siliconix SI1912EDH-T1-E3

Vishay Siliconix SI1917EDH-T1-E3

Alliance Sensors Group GHSI-19-100-A-02-20-S

SI191 Datasheets (15)

SI191 Datasheets Context Search

SI1912EDH-T1-E3

Si1917EDH

Si1917EDH

S101-05

Untitled

Si1913EDH

Si1912EDH

71492

Si1913EDH

Si1912EDH

Si1913EDH-T1-E3

Si1913EDH

Untitled

marking WE SC70-6

Si1912EDH

Si1912EDH

Si1913DH

AN609

AN609

Untitled

Si1912EDH

Si1913DH

Untitled

Si1917EDH