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Vishay Siliconix SI2302DS-T1 TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2.8A I(D),TO-236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI2302DS-T1		12,989			1 $0.2025 10 $0.2025 100 $0.2025 1000 $0.2025 10000 $0.081	Buy Now
	SI2302DS-T1		1,976			1 $0.8 10 $0.8 100 $0.8 1000 $0.32 10000 $0.32	Buy Now
Philips Semiconductors SI2302DS/G PART NUMBER ONLY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI2302DS/G		3,767			1 $0.2025 10 $0.2025 100 $0.2025 1000 $0.108 10000 $0.0878	Buy Now
Philips Semiconductors SI2302DST/R 2500 MA, 20 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI2302DST/R		2,586			1 $0.2544 10 $0.2544 100 $0.2544 1000 $0.1357 10000 $0.1102	Buy Now
Vishay Intertechnologies SI2302DS-T1 TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2.8A I(D),TO-236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI2302DS-T1		1,300			1 $0.75 10 $0.75 100 $0.225 1000 $0.15 10000 $0.15	Buy Now
	SI2302DS-T1		160			1 $0.2025 10 $0.2025 100 $0.135 1000 $0.135 10000 $0.135	Buy Now
Signify Holding SI2302DS TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2.8A I(D),TO-236
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI2302DS		183			1 $15 10 $15 100 $9.25 1000 $8.25 10000 $8.25	Buy Now

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SI2302DS Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2302DS	Philips Semiconductors	N-Channel Enhancement Mode Field-Effect Transistor	Original	PDF
Si2302DS	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SI2302DS,215	NXP Semiconductors	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I_D DC: 2.5 A; Q_gd (typ): 1.6 nC; R_DS(on): [email protected]@2.5V mOhm; V_DSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd	Original	PDF
SI2302DS-E3	Vishay	Transistor Mosfet N-CH 20V 2.8A 3TO-236	Original	PDF
Si2302DS SPICE Device Model	Vishay	N-Channel 1.25-W, 2.5-V Rated MOSFET	Original	PDF
Si2302DS-T1	Vishay	Transistor Mosfet N-CH 20V 2.8A 3TO-236 REEL	Original	PDF
SI2302DS-T1	Vishay Intertechnology	N-Channel 1.25-W, 2.5-V Rated MOSFET	Original	PDF
Si2302DS-T1-E3	Vishay	Transistor Mosfet N-CH 20V 2.8A 3TO-236 REEL	Original	PDF
SI2302DST/R	Philips Semiconductors	Transistor Mosfet N-CH 20V 2.5A 3 pin SOT-23 T/R	Original	PDF

SI2302DS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C-207 Abstract: LCD12 LCD20 C208 J504-1 Text: 1 2 3 4 5 6 7 VCC3 8 +12V VCC3 R196 4.7K 0603B A LCD PANEL TRANSLATION BD CONNECTOR Q24 Q23 SI2302DS SOT23_FET D S G 3 3 A R181 1M 0603B Q27 9 C34 2 FPVCC C55 10P 0603B C41 10P 0603B GND 1 2 3 4 GND CA6 9 33 R37 R46 SCLK LP 9 9 9 9 9 LCD5 LCD4 LCD3 LCD2 LCD13	Original	0603B 0603B 33P/8P4C LCD13 LCD12 LCD11 LCD10 LCD17 LCD16 C-207 LCD20 C208 J504-1	PDF
Si2302DS 2A Abstract: No abstract text available Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-32044--Rev. 13-Oct-03 Si2302DS 2A	PDF
si2302ds Abstract: Si2302ADS Si2302DS 2A Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302ADS O-236 OT-23) Si2302DS S-20617--Rev. 29-Apr-02 Si2302DS 2A	PDF
Si2302DS Abstract: No abstract text available Text: SPICE Device Model Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	Si2302DS	PDF
VNLR02 Abstract: A1 marking code Si2302DS na4a S-51353 Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96 VNLR02 A1 marking code na4a S-51353	PDF
marking code vishay SILICONIX sot-23 Abstract: No abstract text available Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 marking code vishay SILICONIX sot-23	PDF
Si2302DS Abstract: No abstract text available Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97	PDF
Si2302DS Abstract: No abstract text available Text: SPICE Device Model Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2302DS 17-Apr-01	PDF
Si2302DS Abstract: No abstract text available Text: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302DS O-236 OT-23) 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302ADS O-236 OT-23) Si2302DS S-20171--Rev. 18-Mar-02	PDF
MSB003 Abstract: SI2302DS Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: SI2302DS in SOT23.	Original	SI2302DS M3D088 SI2302DS MSB003. MSB003	PDF
Si2302DS Abstract: No abstract text available Text: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96	PDF
Si2302DS Abstract: No abstract text available Text: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302DS O-236 OT-23) S-53600--Rev. 22-May-97	PDF
si2302ds Abstract: SI2302DS-T1 Si2302ADS-T1-E3 SI2302ADS Si2302ADS-T1 Text: Specification Comparison Vishay Siliconix Si2302ADS vs. Si2302DS Description: N-Channel, 2.5 V G-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2302ADS-T1 Replaces Si2302DS-T1 Si2302ADS-T1-E3 (Lead (Pb)-free version) Replaces Si2302DS-T1	Original	Si2302ADS Si2302DS OT-23 Si2302ADS-T1 Si2302DS-T1 Si2302ADS-T1-E3 06-Nov-06	PDF

Si2302ADS-T1 Abstract: Si2302ADS Si2302DS Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-41772--Rev. 20-Sep-04	PDF
si2302ds Abstract: No abstract text available Text: SI2302DS N-channel enhancement mode field-effect transistor Rev. 01 — 03 September 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: SI2302DS in SOT23.	Original	SI2302DS M3D088 SI2302DS MSB003 MBB076	PDF
Si2302DS Abstract: No abstract text available Text: Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si2302DS O-236 OT-23) 08-Apr-05	PDF
prtr5v0u6s Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY Text: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years	Original	2002/95/EC. PMBTA42 PMEG3005EL PMEG6010EP PMR780SN PTVS12VS1UR PZU13y PMBTA42DS PMEG3005ET PMEG6010ER prtr5v0u6s csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY	PDF
"P-Channel MOSFETs" Abstract: F25 marking Hysteretic Synchronous Step-Down Controller LPO3310-222MX JMK316BJ106ML LQH32CN2R2M33 LTC3407-2 LTC3407EDD-4 LTC3407EMSE-4 Text: LTC3407-4 Dual Synchronous, 800mA, 2.25MHz Step-Down DC/DC Regulator DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Efficiency: Up to 95% Very Low Quiescent Current: Only 40µA 2.25MHz Constant Frequency Operation High Switch Current: 1.2A on Each Channel	Original	LTC3407-4 800mA, 25MHz MSOP-10 LTC3412 TSSOP-16E LTC3414 TSSOP-28E LTC3440 "P-Channel MOSFETs" F25 marking Hysteretic Synchronous Step-Down Controller LPO3310-222MX JMK316BJ106ML LQH32CN2R2M33 LTC3407-2 LTC3407EDD-4 LTC3407EMSE-4	PDF
593D Abstract: 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO Text: Final Electrical Specifications LTC1773 Synchronous Step-Down Regulator Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1773 is a current mode synchronous buck regulator controller that drives external complementary power	Original	LTC1773 550kHz LTC1771 LTC1772 OT-23 OT-23, 550kHz, LTC1877 600mA 593D 595D 6TPA150M LTC1773 LTC1773EMS MS10 Si9801DY TOKO D104C LR1206-01-R068 CDRH6D28-3RO	PDF
TSSP4P38 Abstract: infrared distance sensor Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Optoelectronics - Infrared Sensors with Ultra-Fast Response Time AND TEC I INNOVAT O L OGY Infrared Sensors N HN OPTOELECTRONICS O 19 62-2012 Mid-range Infrared Sensors for Object Detection and Ranging The mid-range sensor series consists of two basic types. The first type, called AGC 0, are sensors	Original	differ9337-2726 VMN-PL0438-1204 TSSP4P38 infrared distance sensor	PDF
TSSP4038 Abstract: No abstract text available Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2	Original	VMN-MS6520-1311 TSSP4038	PDF
LTMV Abstract: No abstract text available Text: LTC1773 Synchronous Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 1773 is a current mode synchronous buck regulator controller that drives external complementary power MOSFETs using a fixed frequency architecture. The operating supply range is from 2.65V to 8.5V, making it	Original	LTC1773 550kHz 250mA LTC1877 550kHz, 600mA LTC1878 LTC3404 LTMV	PDF
Untitled Abstract: No abstract text available Text: LTC4052-4.2 Lithium-Ion Battery Pulse Charger with Overcurrent Protection FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Very Low Power Dissipation: 350mW at 1A Complete Standalone Pulse Charger for 1-Cell Lithium-Ion Batteries Requires No Microcontroller, MOSFET or	Original	LTC4052-4 350mW LTC4050 10-Lead LTC4053 LTC4054 800mA 405242f	PDF

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SI2302DS Price and Stock

Vishay Siliconix SI2302DS-T1

Philips Semiconductors SI2302DS/G

Philips Semiconductors SI2302DST/R

Vishay Intertechnologies SI2302DS-T1

Signify Holding SI2302DS

SI2302DS Datasheets (9)

SI2302DS Datasheets Context Search

C-207

Si2302DS 2A

si2302ds

Si2302DS

VNLR02

marking code vishay SILICONIX sot-23

Si2302DS

Si2302DS

Si2302DS

Untitled

MSB003

Si2302DS

Si2302DS

si2302ds

Si2302ADS-T1

si2302ds

Si2302DS

prtr5v0u6s

"P-Channel MOSFETs"

593D

TSSP4P38

TSSP4038

LTMV

Untitled