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    SI3445ADV Price and Stock

    Vishay Siliconix SI3445ADV-T1-E3

    MOSFET P-CH 8V 4.4A 6TSOP
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    SI3445ADV-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI3445ADV-T1-GE3

    MOSFET P-CH 8V 4.4A 6TSOP
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    Vishay Intertechnologies SI3445ADV-T1-E3

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    Bristol Electronics SI3445ADV-T1-E3 1,428
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    SI3445ADV Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3445ADV Vishay Siliconix MOSFETs Original PDF
    SI3445ADV-T1-E3 Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI3445ADV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 4.4A 6-TSOP Original PDF
    SI3445ADV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 4.4A 6-TSOP Original PDF

    SI3445ADV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3445ADV

    Abstract: Si3445ADV-T1-E3
    Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3445ADV Si3445ADV-T1--E3 S-40582--Rev. 29-Mar-04 Si3445ADV-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: Si3445ADV
    Text: Si3445ADV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3445ADV AN609 19-Jan-06

    Si3445ADV-T1-E3

    Abstract: SI3445ADV Si3445DV Si3445DV-T1
    Text: Specification Comparison Vishay Siliconix Si3445ADV vs. Si3445DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3445ADV-T1 Replaces Si3445DV-T1 Si3445ADV-T1-E3 (Lead (Pb)-free version) Replaces Si3445DV-T1-E3


    Original     		PDF Si3445ADV Si3445DV Si3445ADV-T1 Si3445DV-T1 Si3445ADV-T1-E3 Si3445DV-T1-E3 06-Nov-06

    Si3445ADV

    Abstract: Si3445ADV-T1-E3 S09-0765-Rev
    Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 18-Jul-08 S09-0765-Rev

    Untitled

    Abstract: No abstract text available
    Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3445ADV Si3445ADV-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.8 0.060 @ VGS = −2.5 V −4.9 0.080 @ VGS = −1.8 V −4.2 (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G 2.85 mm


    Original     		PDF Si3445ADV Si3445ADV-T1--E3 18-Jul-08

    ML1220T13RE

    Abstract: IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T
    Text: A B C D E ZZZ1 PCB 04/27 Add PCB Panel P/N for MTDAZ@ 04/27 Add PCB Panel P/N DAZ01S00100 07/09 Change PCB Panel P/N from DAZ01S00100 to DAZ01S00200 PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ MTDAZ@ ZZZ25 1 PCB FBDAZ@ 03/28 Change PCB Panel PN from DAZ01W00101 to DAZ01Q00101


    Original     		PDF DAZ01S00100 DAZ01S00200 DAZ01W00101 DAZ01Q00101 DAZ01Q00102 A30DAZ@ ML1220T13RE IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T

    0.1u_0603_25v7k

    Abstract: GL831 Sil1392 LA-4761P RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00
    Text: A ZZZ1 1 B C D E LA-4761P PCB 1 DAZ06H00100 Compal Confidential KIU10-Tiger M/B Schematics Document 2 2 2009-01-13 REV:1.0 3 3 4 4 Security Classification Classification Issued Date Compal Secret Data Title Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF LA-4761P DAZ06H00100 KIU10-Tiger CustomKIU10 LA-4761P 0.1u_0603_25v7k GL831 Sil1392 RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

    TPM infineon SLB 9635 TT

    Abstract: LA-4241P R472 WPCT200AA0WG KB926QFA1 WPCT ESFC G990P11U kb926 ICS9LPRS387
    Text: A B C ZZZ1 ZZZ3 ZZZ4 ZZZ5 ZZZ6 PJP1 PJP1 PCB LA-4241P LS-4243P LS-4244P LS-4249P 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ 14WDAZ@ 14WDA@ 14WDA@ 14WDA@ 14WDA@ D E 1 1 ZZZ2 ZZZ8 ZZZ9 ZZZ10 ZZZ11 ZZZ12 ZZZ13 PCB LA-4241P LS-4242P LS-4243P LS-4244P LS-4245P LS-4246P


    Original     		PDF 14WDAZ@ LA-4241P 14WDA@ LS-4243P LS-4244P LS-4249P ZZZ10 TPM infineon SLB 9635 TT LA-4241P R472 WPCT200AA0WG KB926QFA1 WPCT ESFC G990P11U kb926 ICS9LPRS387

    IFL90

    Abstract: G993P1UF LA-3541P LS-354JP ML1220T13RE A3541 ISL6251 FBMA-L11-201209-221LMA30T Cypress touch intel DG 31 crb
    Text: A B C D E 1 1 Compal Confidential KFW10 Schematics Document 2 2 Intel Merom Processor with Crestline + DDRII + ICH8M With nVIDIA MXM/B 2008-08-25 REV: 2.0 ZZZ12 3 3 PCB 1@ UMA ZZZ1 ZZZ2 ZZZ3 ZZZ4 ZZZ5 PCB PCB PCB PCB PCB FBDAZ@ LA-3541P FBDAZ@ FBDAZ@ LS-3546P


    Original     		PDF KFW10 ZZZ12 LA-3541P ZZZ13 LS-3546P LS-354DP LS-354EP LS-354GP ZZZ10 ZZZ11 IFL90 G993P1UF LA-3541P LS-354JP ML1220T13RE A3541 ISL6251 FBMA-L11-201209-221LMA30T Cypress touch intel DG 31 crb

    BLM15AG121SN1D

    Abstract: 0.1u_0603_25v7k KB926QFA1 KB926 X5H027000FG1H mic cr6 100 3p3 LBMA46 LS-4501P RLS4148LL34 SST25LF080A_SO8-200mil
    Text: A B C D E 1 1 Compal Confidential KIU00 LA-4501P M/B Schematics Document 2 2 2008-08-20 REV:1.0 3 3 4 4 Compal Secret Data Security Classification 2008/05/30 Issued Date 2011/05/30 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF KIU00 LA-4501P ELECTRONIR75 BLM15AG121SN1D 0.1u_0603_25v7k KB926QFA1 KB926 X5H027000FG1H mic cr6 100 3p3 LBMA46 LS-4501P RLS4148LL34 SST25LF080A_SO8-200mil