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    SI3447BDV Search Results

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    SI3447BDV Price and Stock

    Vishay Siliconix SI3447BDV-T1-E3

    MOSFET P-CH 12V 4.5A 6TSOP
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    DigiKey SI3447BDV-T1-E3 Digi-Reel 1
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    SI3447BDV-T1-E3 Cut Tape
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    RS SI3447BDV-T1-E3 Bulk 3,000
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    Vishay Siliconix SI3447BDV-T1-GE3

    MOSFET P-CH 12V 4.5A 6TSOP
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    DigiKey SI3447BDV-T1-GE3 Reel
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    Vishay Siliconix SI3447BDV-T1

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    Bristol Electronics SI3447BDV-T1 1,995 9
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    Quest Components SI3447BDV-T1 1,596
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    Others SI3447BDVT1E3

    AVAILABLE EU
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    ComSIT USA SI3447BDVT1E3 3,000
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    Vishay Huntington SI3447BDV

    P-Channel 12-V (D-S) MOSFET
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    Win Source Electronics SI3447BDV 240,859
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    Find more SI3447BDV price and stock on Findchips.com

    SI3447BDV Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3447BDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    Si3447BDV SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    Si3447BDV-T1 Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    Si3447BDV-T1-E3 Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF
    SI3447BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4.5A 6-TSOP Original PDF
    SI3447BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4.5A 6-TSOP Original PDF

    SI3447BDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3447DV-T1

    Abstract: Si3447BDV Si3447BDV-T1 Si3447BDV-T1-E3 Si3447DV
    Text: Specification Comparison Vishay Siliconix Si3447BDV vs. Si3447DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3447BDV-T1 Replaces Si3447DV-T1 Si3447BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3447DV-T1


    Original     		PDF Si3447BDV Si3447DV Si3447BDV-T1 Si3447DV-T1 Si3447BDV-T1-E3 06-Nov-06

    Si3447BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3447BDV 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447BDV 2002/95/EC Si3447BDV-T1-E3 Si3447BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3447BDV

    Abstract: 1600 v mosfet ultra low igss pA Si3447BDV-T1
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance


    Original     		PDF Si3447BDV Si3447BDV-T1 Si3447BDV-T1--E3 08-Apr-05 1600 v mosfet ultra low igss pA

    Si3447BDV

    Abstract: No abstract text available
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance


    Original     		PDF Si3447BDV Si3447BDV-T1 Si3447BDV-T1--E3 18-Jul-08

    7812

    Abstract: 9583 AN609 Si3447BDV
    Text: Si3447BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3447BDV AN609 19-Jan-06 7812 9583

    Si3447BDV

    Abstract: Si3447BDV-T1 72020
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance


    Original     		PDF Si3447BDV Si3447BDV-T1 Si3447BDV-T1--E3 S-40424--Rev. 15-Mar-04 72020

    Si3447BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3447BDV 02-Oct-02

    Si3447BDV

    Abstract: Si3447BDV-T1 Si3447BDV-T1-E3 SI3447CDV
    Text: Specification Comparison Vishay Siliconix Si3447CDV vs. Si3447BDV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3447CDV-T1-E3 replaces Si3447BDV-T1-E3 Si3447CDV-T1-E3 replaces Si3447BDV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3447CDV Si3447BDV Si3447CDV-T1-E3 Si3447BDV-T1-E3 Si3447BDV-T1 06-Feb-08

    Si3447BDV

    Abstract: No abstract text available
    Text: Si3447BDV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 rDS(on) (W) ID (A) 0.040 @ VGS = -4.5 V -6.0 0.053 @ VGS = -2.5 V - 5.2 0.072 @ VGS = -1.8 V - 4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance


    Original     		PDF Si3447BDV S-21788--Rev. 07-Oct-02

    Si3447BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3447BDV S-50383Rev. 21-Mar-05

    TSOP 6 marking 52

    Abstract: No abstract text available
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447BDV 2002/95/EC Si3447BDV-T1-E3 Si3447BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP 6 marking 52

    Si3447BDV

    Abstract: Si3447BDV-T1-E3
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447BDV 2002/95/EC Si3447BDV-T1-E3 Si3447BDV-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3447BDV 2002/95/EC Si3447BDV-T1-E3 Si3447BDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: LTC3776 Dual 2-Phase, No RSENSETM, Synchronous Controller for DDR/QDR Memory Termination FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 3776 is a 2-phase dual output synchronous stepdown switching regulator controller for DDR/QDR memory


    Original     		PDF LTC3776 LTC3736-1 LTC3737 LTC3831 3776fa

    Q8031

    Abstract: ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD M42C MLB REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE C 474680 PRODUCTION RELEASED


    Original     		PDF ITP700FLEX LIP-SM-M42 Q8031 ISL9504 U7500 SLG8LP436 ISL9504 macbook "board view" macbook 820-1889 c5966 U6200 PP3V42G3H

    FDW2520C

    Abstract: LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8
    Text: LTC3736-2 Dual 2-Phase, No RSENSE , Synchronous Controller with Output Tracking DESCRIPTION TM FEATURES n n n n n n n n n n n n n n n n No Current Sense Resistors Required Out-of-Phase Controllers Reduce Required Input Capacitance Tracking Function Wide VIN Range: 2.75V to 9.8V


    Original     		PDF LTC3736-2 24-Lead LTC3808 16-Lead LTC3809/LTC3809-1 10-Lead 37362fb FDW2520C LTC3736-2 LTC3736EGN-2 Si9801DY TSSOP-8 footprint and soldering sot-23 marking g02 tssop8 flyback pwm tssop8

    4TPB150MC

    Abstract: IHLP-2525CZ-01 LTC3809 LTC3809EDD MBRM120L Si7540DP 5 pin pulse transformer
    Text: LTC3809 No RSENSETM, Low EMI, Synchronous DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO No Current Sense Resistor Required Selectable Spread Spectrum Frequency Modulation for Low Noise Operation Constant Frequency Current Mode Operation for


    Original     		PDF LTC3809 250kHz 750kHz) 550kHz, LTC3776 850kHz, 24-Lead LTC3808 3809f 4TPB150MC IHLP-2525CZ-01 LTC3809 LTC3809EDD MBRM120L Si7540DP 5 pin pulse transformer

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    CORE F5A

    Abstract: list of P channel power mosfet LTC3809-1 LTC3809EDD-1 LTC3809EMSE-1 3809-1
    Text: LTC3809-1 No RSENSETM, Low Input Voltage, Synchronous DC/DC Controller with Output Tracking FEATURES DESCRIPTION n The LTC 3809-1 is a synchronous step-down switching regulator controller that drives external complementary power MOSFETs using few external components. The


    Original     		PDF LTC3809-1 10ontroller LTC3809 850kHz, 24-Lead 10-Lead 38091fc CORE F5A list of P channel power mosfet LTC3809-1 LTC3809EDD-1 LTC3809EMSE-1 3809-1