Datasheet Archive: SI4178DY datasheets

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Vishay Siliconix SI4178DY-T1-GE3 MOSFET N-CH 30V 12A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4178DY-T1-GE3	Digi-Reel	3,202		1	1 $1.01 10 $0.629 100 $1.01 1000 $0.28596 10000 $0.28596	Buy Now
	SI4178DY-T1-GE3	Cut Tape	3,202		1	1 $1.01 10 $0.629 100 $1.01 1000 $0.28596 10000 $0.28596	Buy Now
	SI4178DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.25316	Buy Now
RS	SI4178DY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.55	Get Quote
New Advantage Corporation	SI4178DY-T1-GE3		112,500		1	1 - 10 - 100 - 1000 - 10000 $0.2142	Buy Now
Vishay Siliconix SI4178DY-T1-E3 MOSFET N-CH 30V 12A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4178DY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4178DY-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4178DY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4178DY-T1-GE3	Reel	7,500	18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.16863	Buy Now
	SI4178DY-T1-GE3	Ammo Pack		113 Weeks, 5 Days	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	SI4178DY-T1-GE3		6,012			1 $0.56 10 $0.553 100 $0.381 1000 $0.267 10000 $0.202	Buy Now
Verical	SI4178DY-T1-GE3		2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.213	Buy Now
	SI4178DY-T1-GE3		1,675		33	1 - 10 - 100 $0.2581 1000 $0.1811 10000 $0.1811	Buy Now
Arrow Electronics	SI4178DY-T1-GE3		2,500	18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.2128	Buy Now
	SI4178DY-T1-GE3	Cut Strips	1,675	18 Weeks	1	1 $0.3229 10 $0.3109 100 $0.2581 1000 $0.1811 10000 $0.1811	Buy Now
Newark	SI4178DY-T1-GE3	Reel			2,500	1 $0.286 10 $0.286 100 $0.286 1000 $0.286 10000 $0.258	Buy Now
	SI4178DY-T1-GE3	Cut Tape			2,500	1 - 10 - 100 - 1000 $0.255 10000 $0.255	Buy Now

Bristol Electronics	SI4178DY-T1-GE3		9,651			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4178DY-T1-GE3		1,965			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4178DY-T1-GE3		234			1 $1.002 10 $1.002 100 $0.6012 1000 $0.501 10000 $0.501	Buy Now
TTI	SI4178DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.173	Buy Now
TME	SI4178DY-T1-GE3		2,491		1	1 $0.712 10 $0.478 100 $0.328 1000 $0.237 10000 $0.228	Buy Now
Chip 1 Exchange	SI4178DY-T1-GE3		25,946			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	SI4178DY-T1-GE3			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	SI4178DY-T1-GE3		38			1 $3.85 10 $3.85 100 $2.88 1000 $2.5 10000 $2.5	Buy Now
EBV Elektronik	SI4178DY-T1-GE3			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4178DYT1GE3 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4178DYT1GE3		54			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4178DY-T1-E3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip-Germany GmbH	SI4178DY-T1-E3		1,268			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI4178DY Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4178DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A SO8		Original	PDF
SI4178DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC		Original	PDF

SI4178DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4178DY Abstract: No abstract text available Text: SPICE Device Model Si4178DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4178DY 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4178DY-T1-E3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4178DY 2002/95/EC Si4178DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si41 Abstract: No abstract text available Text: SPICE Device Model Si4178DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4178DY 11-Mar-11 si41
Si4178DY Abstract: 7313 AN609 Text: Si4178DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si4178DY AN609, 25-Feb-10 7313 AN609
Untitled Abstract: No abstract text available Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4178DY 2002/95/EC Si4178DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si4178DY Abstract: SI4178DY-T1-GE3 Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4178DY 2002/95/EC Si4178DY-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4178DY 2002/95/EC Si4178DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4178DY-T1-E3 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4178DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4178DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si4178DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4178DY 2002/95/EC Si4178DY-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si4178DY-T1-E3 Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si4178DY-T1-E3 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	PDF	VMN-PT0105-1007
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

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SI4178DY Datasheets (2)

SI4178DY Datasheets Context Search

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