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    SI4431 Price and Stock

    Vishay Siliconix SI4431CDY-T1-GE3

    MOSFET P-CH 30V 9A 8SO
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    DigiKey SI4431CDY-T1-GE3 Cut Tape 35,874 1
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    SI4431CDY-T1-GE3 Digi-Reel 35,874 1
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    SI4431CDY-T1-GE3 Reel 32,500 2,500
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    RS SI4431CDY-T1-GE3 Bulk 2,500
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    Bristol Electronics SI4431CDY-T1-GE3 6
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    Quest Components SI4431CDY-T1-GE3 21
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    SI4431CDY-T1-GE3 4
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    New Advantage Corporation SI4431CDY-T1-GE3 15,000 1
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    Vishay Siliconix SI4431BDY-T1-E3

    MOSFET P-CH 30V 5.7A 8SO
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    DigiKey SI4431BDY-T1-E3 Cut Tape 26,479 1
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    SI4431BDY-T1-E3 Digi-Reel 26,479 1
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    SI4431BDY-T1-E3 Reel 22,500 2,500
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    Bristol Electronics SI4431BDY-T1-E3 1,105
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    Quest Components SI4431BDY-T1-E3 39
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    New Advantage Corporation SI4431BDY-T1-E3 2,500 1
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    Vishay Siliconix SI4431BDY-T1-GE3

    MOSFET P-CH 30V 5.7A 8SO
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    DigiKey SI4431BDY-T1-GE3 Digi-Reel 6,593 1
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    SI4431BDY-T1-GE3 Cut Tape 6,593 1
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    SI4431BDY-T1-GE3 Reel 5,000 2,500
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    Vishay Siliconix SI4431CDY-T1-E3

    MOSFET P-CH 30V 9A 8SO
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    DigiKey SI4431CDY-T1-E3 Cut Tape 6,493 1
    • 1 $1.61
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    SI4431CDY-T1-E3 Digi-Reel 6,493 1
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    SI4431CDY-T1-E3 Reel 5,000 2,500
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    New Advantage Corporation SI4431CDY-T1-E3 2,500 1
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    Silicon Laboratories Inc SI4431-B1-FM

    IC RF TXRX ISM<1GHZ 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4431-B1-FM Tray 810 1
    • 1 $7.26
    • 10 $6.654
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    Mouser Electronics SI4431-B1-FM 179
    • 1 $7.26
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    Newark SI4431-B1-FM Bulk 159 1
    • 1 $7.55
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    Bristol Electronics SI4431-B1-FM 364
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    Quest Components SI4431-B1-FM 291
    • 1 $13.9404
    • 10 $13.9404
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    • 1000 $6.9702
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    Win Source Electronics SI4431-B1-FM 10,916
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    • 100 $4.711
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    Find more SI4431 price and stock on Findchips.com

    SI4431 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4431 Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    SI4431-A0-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX ISM 930MHZ 3.6V 20-QFN Original PDF
    SI4431ADY Vishay VISHAY/SILICONIX P-CHANNEL MOSFETS SO-8 30V 7A 2.5W Original PDF
    Si4431ADY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4431ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4431-B1-FM Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 240-930MHZ -8-13DB 20QFN Original PDF
    SI4431-B1-FMR Silicon Laboratories RF Transceivers, RF/IF and RFID, IC TXRX 240-930MHZ -8-13DB 20QFN Original PDF
    SI4431BDY Vishay Siliconix MOSFETs Original PDF
    Si4431BDY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4431BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 5.7A 8-SOIC Original PDF
    SI4431BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 5.7A 8SOIC Original PDF
    SI4431CDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 9A 8SOIC Original PDF
    SI4431CDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 9A 8-SOIC Original PDF
    SI4431DY Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF
    Si4431DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4431DY Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    Si4431DY Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI4431DY Vishay Siliconix XSTR, 4431, MOSFET, P-CH, 30V, SO8 Original PDF
    SI4431DY_NL Fairchild Semiconductor P-Channel Logic Level PowerTrench MOSFET Original PDF

    SI4431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI4431CDY

    Abstract: No abstract text available
    Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4431BDY-T1

    Abstract: Si4431BDY Si4431BDY-T1-E3 si4431b
    Text: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8


    Original     		PDF Si4431BDY Si4431BDY-T1 Si4431BDY-T1-E3 08-Apr-05 si4431b

    SI4431DY

    Abstract: No abstract text available
    Text: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4431DY S-47958--Rev. 15-Apr-96

    A1818

    Abstract: SI4431BDY-T1-E3
    Text: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8


    Original     		PDF Si4431BDY Si4431BDY-T1 Si4431BDY-T1-E3 18-Jul-08 A1818

    Si4431CDY

    Abstract: Si4431CDY-T1-E3
    Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 18-Jul-08

    Si4431BDY

    Abstract: No abstract text available
    Text: Si4431BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = -10 V -7.5 0.050 @ VGS = -4.5 V -5.8 -30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4431BDY S-22437--Rev. 20-Jan-03

    Untitled

    Abstract: No abstract text available
    Text: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8


    Original     		PDF Si4431BDY Si4431BDY-T1-E3 Si4431BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4431DY

    Abstract: No abstract text available
    Text: Si4431DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4431DY S-47958--Rev. 15-Apr-96

    NON polarized capacitor 1uf

    Abstract: si4431 crc error Siward crystal xtal SI4431 WD-1 ATB40
    Text: Si4431 Si4431 ISM T RANSCEIVER Features           Frequency Range = 240–930 MHz Sensitivity = –118 dBm +13 dBm Max Output Power Configurable –8 to +13 dBm Low Power Consumption 18.5 mA receive 28 mA @ +13 dBm transmit


    Original     		PDF Si4431 Si4431 20-Pin NON polarized capacitor 1uf si4431 crc error Siward crystal xtal WD-1 ATB40

    Si4431BDY-T1-E3

    Abstract: Si4431BDY Si4431BDY-T1-GE3
    Text: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8


    Original     		PDF Si4431BDY Si4431BDY-T1-E3 Si4431BDY-T1-GE3 11-Mar-11

    4431 SOIC-8

    Abstract: 4431 mosfet 4431 soic8 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Si4431DY
    Text: Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		PDF Si4431DY 4431 SOIC-8 4431 mosfet 4431 soic8 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    99420

    Abstract: No abstract text available
    Text: Si4431ADY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4431ADY S-99420--Rev. 29-Nov-99 99420

    71803

    Abstract: Si4431ADY
    Text: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = - 10 V - 7.2 0.052 @ VGS = - 4.5 V - 5.5 D TrenchFETr Power MOSFET - 30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET


    Original     		PDF Si4431ADY S-95713--Rev. 18-Feb-02 71803

    S-49534

    Abstract: Si4431DY
    Text: Si4431DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "5.8 0.070 @ VGS = –4.5 V "4.5 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4431DY S-49534--Rev. 06-Oct-97 S-49534

    Untitled

    Abstract: No abstract text available
    Text: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V –7.2 0.052 @ VGS = –4.5 V –5.5 D TrenchFETr Power MOSFET –30 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4431ADY-T1


    Original     		PDF Si4431ADY Si4431ADY-T1 Si4431ADY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4431ADY 08-Apr-05

    Si4431CDY

    Abstract: Si4431CDY-T1-E3 SI4431CDY-T1-GE3 si4431c
    Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4431CDY Si4431CDY-T1-E3 Si4431CDY-T1-GE3 11-Mar-11 si4431c

    Si4431DY

    Abstract: 3V02
    Text: Si4431DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.040 @ VGS = -10 V "5.8 0.070 @ VGS = -4.5 V "4.5 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4431DY S41465Rev. 3V02

    Si4431ADY

    Abstract: No abstract text available
    Text: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4431ADY S-03467--Rev. 09-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8


    Original     		PDF Si4431BDY Si4431BDY-T1-E3 Si4431BDY-T1-GE3 11-Mar-11

    4431 mosfet

    Abstract: 4431 fairchild Si4431DY
    Text: Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		PDF Si4431DY 4431 mosfet 4431 fairchild

    Si4431ADY

    Abstract: No abstract text available
    Text: Si4431ADY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = –10 V "7.0 0.055 @ VGS = –4.5 V "5.0 –30 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4431ADY 18-Jul-08

    Si4431BDY

    Abstract: Si4431BDY-T1-E3 Si4431BDY-T1-GE3
    Text: Si4431BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs SO-8


    Original     		PDF Si4431BDY Si4431BDY-T1-E3 Si4431BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Si4431DY Semiconductors P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) 30 Id (A) 0.040 @VGs = -10 V ±5.8 0.070 @ VGs = -4.5 V ±4.5 s s s SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)


    OCR Scan     		PDF Si4431DY S-49534â 06-Oct-97 DD17flflT