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Vishay Siliconix SI4874BDY-T1-E3 MOSFET N-CH 30V 12A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4874BDY-T1-E3	Cut Tape	6,995		1	1 $1.94 10 $1.237 100 $1.94 1000 $0.60599 10000 $0.60599	Buy Now
	SI4874BDY-T1-E3	Digi-Reel	6,995		1	1 $1.94 10 $1.237 100 $1.94 1000 $0.60599 10000 $0.60599	Buy Now
	SI4874BDY-T1-E3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.54592	Buy Now
RS	SI4874BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.01	Get Quote
Vishay Siliconix SI4800BDY-T1-E3 MOSFET N-CH 30V 6.5A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4800BDY-T1-E3	Digi-Reel	6,819		1	1 $1.31 10 $0.822 100 $1.31 1000 $0.3849 10000 $0.3849	Buy Now
	SI4800BDY-T1-E3	Cut Tape	6,819		1	1 $1.31 10 $0.822 100 $1.31 1000 $0.3849 10000 $0.3849	Buy Now
	SI4800BDY-T1-E3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.34313	Buy Now
RS	SI4800BDY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.75	Get Quote
Quest Components	SI4800BDY-T1-E3		2,122			1 $0.45 10 $0.45 100 $0.45 1000 $0.1875 10000 $0.1875	Buy Now
Vishay Siliconix SI4866DY-T1-E3 MOSFET N-CH 12V 11A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4866DY-T1-E3	Digi-Reel	3,915		1	1 $2.93 10 $1.899 100 $2.93 1000 $0.97816 10000 $0.97816	Buy Now
	SI4866DY-T1-E3	Cut Tape	3,915		1	1 $2.93 10 $1.899 100 $2.93 1000 $0.97816 10000 $0.97816	Buy Now
	SI4866DY-T1-E3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.8875	Buy Now
RS	SI4866DY-T1-E3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $2.31	Get Quote
Velocity Electronics	SI4866DY-T1-E3		392			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4835DDY-T1-GE3 MOSFET P-CH 30V 13A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4835DDY-T1-GE3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.48925	Buy Now
RS	SI4835DDY-T1-GE3	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.88	Get Quote
Vishay Siliconix SI4804CDY-T1-GE3 MOSFET 2N-CH 30V 8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4804CDY-T1-GE3	Cut Tape	2,475		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
	SI4804CDY-T1-GE3	Digi-Reel	2,475		1	1 $1.13 10 $0.707 100 $1.13 1000 $0.32557 10000 $0.32557	Buy Now
New Advantage Corporation	SI4804CDY-T1-GE3		12,500		1	1 - 10 - 100 - 1000 - 10000 $0.3503	Buy Now

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SI48 Datasheets (415)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4800	NXP Semiconductors	N-channel TrenchMOS logic level FET	Original	PDF
Si4800	Philips Semiconductors	N-Channel Enhancement Mode Field-Effect Transistor	Original	PDF
SI4800	Philips Semiconductors	N-channel enhancement mode field-effect transistor	Original	PDF
SI4800,518	Philips Semiconductors	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A SOT96-1	Original	PDF
SI4800BDY	Vishay Siliconix	MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.3W; Resistance, Rds on:0.0185R; SMD:1; Charge, gate p	Original	PDF
SI4800BDY	Vishay Siliconix	MOSFETs	Original	PDF
Si4800BDY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4800BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC	Original	PDF
SI4800BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC	Original	PDF
Si4800DY	Vishay Intertechnology	N-Channel Reducded Q g , Fast Switching MOSFET	Original	PDF
SI4800DY	Vishay Telefunken	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4800DY SPICE Device Model	Vishay	N-Channel Reduced Qg, Fast Switching MOSFET	Original	PDF
SI4800DY-T1	Vishay Intertechnology	N-Channel Reducded Q g , Fast Switching MOSFET	Original	PDF
Si4802DY	Unknown	Metal oxide N-channel FET, Enhancement Type	Original	PDF

Si4802DY	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4802DY	Vishay Siliconix	MOSFETs	Original	PDF
SI4802DY-T1	Vishay Intertechnology	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI4804BDY	Vishay Siliconix	MOSFET, DUAL NN SO-8MOSFET, DUAL NN SO-8; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:7.5A; Current, Idm pulse:30A; Power, Pd:1.1W; Resistance, Rds on:0.022R; SMD:1;	Original	PDF
Si4804BDY	Vishay Siliconix	Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison	Original	PDF
SI4804BDY	Vishay Siliconix	MOSFETs	Original	PDF

...

SI48 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized	Original	PDF	Si4804BDY 2002/95/EC Si4804BDY-T1-E3 Si4804BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SI4850EY-t1g Abstract: si4850 Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	PDF	Si4850EY 2002/95/EC Si4850EY-T1-E3 Si4850EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4850EY-t1g si4850
si4838 Abstract: No abstract text available Text: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated	Original	PDF	Si4838DY Si4838DY-T1-E3 Si4838DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4838
Si4842DY Abstract: S-02445 Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4842DY S-02445--Rev. 06-Nov-00 S-02445
2sc9018 Abstract: No abstract text available Text: AN738 Si4825/36-A A NTENNA , S CHEMATIC , L AYOUT AND D E S I G N G UIDEL INES 1. Introduction This document provides general Si4825/36-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM and PCB layout. All users should follow the Si4825/36-A design guidelines presented in Section 2	Original	PDF	AN738 Si4825/36-A Si4825 Si4836 2sc9018
Si4816BDY Abstract: Si4816BDY-T1-E3 Text: Si4816BDY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) Channel-1 30 Channel-2 ID (A) 0.0185 at VGS = 10 V 6.8 0.0225 at VGS = 4.5 V 6.0 0.0115 at VGS = 10 V 11.4 0.016 at VGS = 4.5 V	Original	PDF	Si4816BDY 08-Apr-05 Si4816BDY-T1-E3
Si4866DY Abstract: Si4866DY-T1-E3 Text: Si4866DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 12 RDS(on) (Ω) ID (A) 0.0055 at VGS = 4.5 V 17 0.008 at VGS = 2.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs	Original	PDF	Si4866DY Si4866DY-T1-E3 Si4866DY-T1-GE3 11-Mar-11
Si4800BDY-T1-E3 Abstract: Si4800BDY Si4800BDY-T1-GE3 Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11
Si4816DY Abstract: Si4816DY-T1-E3 Text: Si4816DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 6.3 0.030 at VGS = 4.5 V 5.4 0.013 at VGS = 10 V 10 0.0185 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4816DY 2002/95/EC 11-Mar-11 Si4816DY-T1-E3
Si4888DY Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3 Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 11-Mar-11
Si4840DY Abstract: Si4840DY-T1-E3 Si4840DY-T1-GE3 US2050 Text: Si4840DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 ID (A) 0.009 at VGS = 10 V 14 0.012 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	PDF	Si4840DY 2002/95/EC Si4840DY-T1-E3 Si4840DY-T1-GE3 11-Mar-11 US2050
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4804DY Dual N-Channel 30-V D-S MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si4804DY
si4829 Abstract: No abstract text available Text: Si4829DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.215 at VGS = - 4.5 V -2 0.320 at VGS = - 2.5 V -2 Qg (Typ.) 2.6 nC SCHOTTKY PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21	Original	PDF	Si4829DY 2002/95/EC Si4829DY-T1-E3 18-Jul-08 si4829
SI4823DY Abstract: No abstract text available Text: SPICE Device Model Si4823DY Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si4823DY 18-Jul-08

Untitled Abstract: No abstract text available Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	PDF	Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4862DY Abstract: No abstract text available Text: Si4862DY New Product Vishay Siliconix N-Channel 16-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D Low 3.3-mW rDS(on) D Low Gate Resistance PRODUCT SUMMARY VDS (V) 16 rDS(on) (W) ID (A) 0.0033 @ VGS = 4.5 V 25 0.0055 @ VGS = 2.5 V 20 APPLICATIONS	Original	PDF	Si4862DY S-03596--Rev. 07-May-01
Si4804CDY Abstract: Si4804BDY-T1-E3 Si4804BDY Si4804CDY-T1-GE3 Text: Specification Comparison Vishay Siliconix Si4804CDY vs. Si4804BDY Description: Package: Pin Out: Dual N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3 Si4804CDY-T1-GE3 replaces Si4804BDY-T1-E3	Original	PDF	Si4804CDY Si4804BDY Si4804CDY-T1-GE3 Si4804BDY-T1-E3 20-Jul-09
Si4818DY Abstract: No abstract text available Text: Si4818DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0155 @ VGS = 10 V 9.5 0.0205 @ VGS = 4.5 V 8.2 SCHOTTKY PRODUCT SUMMARY	Original	PDF	Si4818DY S-00042--Rev. 24-Jan-00
71142 a Abstract: 71142 D Si4886DY Text: Si4886DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.010 @ VGS = 10 V 13 0.0135 @ VGS = 4.5 V 11 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si4886DY 08-Apr-05 71142 a 71142 D
S99-041 Abstract: No abstract text available Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S	Original	PDF	Si4884DY S99-041--Rev. 04-Oct-99 S99-041
Untitled Abstract: No abstract text available Text: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A	Original	PDF	Si4810DY S-56946--Rev. 23-Nov-98
Si4866BDY Abstract: 71342 Text: New Product Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 VDS (V) 12 Qg (Typ) 29.5 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	PDF	Si4866BDY Si4866BDY-T1-E3 08-Apr-05 71342
si4833a Abstract: SI4833ADY Text: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 Qg (Typ) • LITTLE FOOT Plus Power MOSFET RoHS - 4.6 COMPLIANT	Original	PDF	Si4833ADY Si4833ADY-T1-E3 S-60428-Rev. 20-Mar-06 si4833a
Si4884DY Abstract: Si4884DY-T1 Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY	Original	PDF	Si4884DY Si4884DY-T1 08-Apr-05

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SI48 Price and Stock

Vishay Siliconix SI4874BDY-T1-E3

Vishay Siliconix SI4800BDY-T1-E3

Vishay Siliconix SI4866DY-T1-E3

Vishay Siliconix SI4835DDY-T1-GE3

Vishay Siliconix SI4804CDY-T1-GE3

SI48 Datasheets (415)

SI48 Datasheets Context Search

Untitled

SI4850EY-t1g

si4838

Si4842DY

2sc9018

Si4816BDY

Si4866DY

Si4800BDY-T1-E3

Si4816DY

Si4888DY

Si4840DY

Untitled

si4829

SI4823DY

Untitled

Si4862DY

Si4804CDY

Si4818DY

71142 a

S99-041

Untitled

Si4866BDY

si4833a

Si4884DY