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Vishay Siliconix SI7178DP-T1-GE3 MOSFET N-CH 100V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7178DP-T1-GE3	Digi-Reel	6,127		1	1 $3.68 10 $2.407 100 $3.68 1000 $1.27547 10000 $1.27547	Buy Now
	SI7178DP-T1-GE3	Cut Tape	6,127		1	1 $3.68 10 $2.407 100 $3.68 1000 $1.27547 10000 $1.27547	Buy Now
	SI7178DP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.2095	Buy Now
RS	SI7178DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $3.05	Get Quote
Vishay Siliconix SI7172ADP-T1-RE3 MOSFET N-CH 200V PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7172ADP-T1-RE3	Cut Tape	6,000		1	1 $1.74 10 $1.106 100 $1.74 1000 $0.53493 10000 $0.53493	Buy Now
	SI7172ADP-T1-RE3	Digi-Reel	6,000		1	1 $1.74 10 $1.106 100 $1.74 1000 $0.53493 10000 $0.53493	Buy Now
	SI7172ADP-T1-RE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.47112	Buy Now
Vishay Siliconix SI7174DP-T1-GE3 MOSFET N-CH 75V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7174DP-T1-GE3	Cut Tape	3,205		1	1 $4.15 10 $2.732 100 $4.15 1000 $1.46955 10000 $1.46955	Buy Now
	SI7174DP-T1-GE3	Digi-Reel	3,205		1	1 $4.15 10 $2.732 100 $4.15 1000 $1.46955 10000 $1.46955	Buy Now
	SI7174DP-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.425	Buy Now
New Advantage Corporation	SI7174DP-T1-GE3		3,000		1	1 - 10 - 100 - 1000 - 10000 $1.84	Buy Now
Vishay Siliconix SI7170DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7170DP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI7172DP-T1-GE3 MOSFET N-CH 200V 25A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7172DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.1375	Buy Now
Quest Components	SI7172DP-T1-GE3		5			1 $2.2058 10 $2.0293 100 $2.0293 1000 $2.0293 10000 $2.0293	Buy Now
	SI7172DP-T1-GE3		5			1 $2.2058 10 $2.0293 100 $2.0293 1000 $2.0293 10000 $2.0293	Buy Now

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SI717 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
SI7170DP-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC	Original	PDF
SI7172ADP-T1-RE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 200V POWERPAK SO-8	Original	PDF
SI7172DP-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 25A PPAK 8SOIC	Original	PDF
SI7174DP-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 60A PPAK 8SOIC	Original	PDF
SI7178DP-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A PPAK 8SOIC	Original	PDF

SI717 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package	Original	Si7172DP Si7172DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
AN609 Abstract: Si7172DP Text: Si7172DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si7172DP AN609, 09-Jul-08 AN609	PDF
AN609 Abstract: Si7170DP Text: Si7170DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When	Original	Si7170DP AN609, 11-Apr-08 AN609	PDF
a2728 Abstract: Si7178DP Text: SPICE Device Model Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si7178DP S-81925-Rev. 25-Aug-08 a2728	PDF
SI7172DP-T1-GE3 Abstract: Si7172DP Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package	Original	Si7172DP Si7172DP-T1-GE3 18-Jul-08	PDF
so 54 t Abstract: Si7178DP-T1-GE3 Si7178DP Text: New Product Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.014 at VGS = 10 V 60 47.5 nC • • • • S • Primary Side Switch • POL • Intermediate Bus Converter 5.15 mm 1	Original	Si7178DP Si7178DP-T1-GE3 08-Apr-05 so 54 t	PDF
Si7172DP Abstract: Si7172DP-T1-GE3 si7172 Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package	Original	Si7172DP Si7172DP-T1-GE3 11-Mar-11 si7172	PDF
Si7174DP Abstract: Si7174DP-T1-GE3 S8078 si7174 Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS	Original	Si7174DP Si7174DP-T1-GE3 08-Apr-05 S8078 si7174	PDF
Si7178DP Abstract: No abstract text available Text: SPICE Device Model Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si7178DP 18-Jul-08	PDF
Si7172DP Abstract: No abstract text available Text: SPICE Device Model Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si7172DP 18-Jul-08	PDF
Si7174DP Abstract: No abstract text available Text: SPICE Device Model Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si7174DP 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package	Original	Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS	Original	Si7174DP Si7174DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7174DP Abstract: SI7174DP-T1-GE3 SI7174DPT1GE3 Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS	Original	Si7174DP Si7174DP-T1-GE3 18-Jul-08 SI7174DPT1GE3	PDF

Si7174DP Abstract: Si7174DP-T1-GE3 Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS	Original	Si7174DP Si7174DP-T1-GE3 11-Mar-11	PDF
mosfet equivalent Abstract: Si7178DP Text: New Product Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.014 at VGS = 10 V 60 47.5 nC • • • • S • Primary Side Switch • POL • Intermediate Bus Converter 5.15 mm 1	Original	Si7178DP Si7178DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet equivalent	PDF
Untitled Abstract: No abstract text available Text: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested	Original	Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si7170DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0034 at VGS = 10 V 40g 0.0043 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 29 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • Notebook PC Core - Low Side • VRM POL	Original	Si7170DP 2002/95/EC Si7170DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si7178DP Abstract: AN609 Text: Si7178DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si7178DP AN609 25-Mar-08	PDF
SI7174DP Abstract: No abstract text available Text: SPICE Device Model Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si7174DP capacit353 S-81926-Rev. 25-Aug-08	PDF
Untitled Abstract: No abstract text available Text: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested	Original	Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si7174DP www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7174DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package	Original	Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS	Original	Si7174DP Si7174DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF

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Vishay Siliconix SI7178DP-T1-GE3

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SI717 Datasheets (5)

SI717 Datasheets Context Search

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AN609

AN609

a2728

SI7172DP-T1-GE3

so 54 t

Si7172DP

Si7174DP

Si7178DP

Si7172DP

Si7174DP

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Si7174DP

Si7174DP

mosfet equivalent

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Si7178DP

SI7174DP

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