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    SI9433 Price and Stock

    Vishay Siliconix SI9433BDY-T1-E3

    MOSFET P-CH 20V 4.5A 8SO
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    DigiKey SI9433BDY-T1-E3 Digi-Reel 1,475 1
    • 1 $1.4
    • 10 $0.885
    • 100 $1.4
    • 1000 $0.41764
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    SI9433BDY-T1-E3 Cut Tape 1,475 1
    • 1 $1.4
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    SI9433BDY-T1-E3 Reel 2,500
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    RS SI9433BDY-T1-E3 Bulk 2,500
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    Quest Components SI9433BDY-T1-E3 71
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    New Advantage Corporation SI9433BDY-T1-E3 5,000 1
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    Vishay Siliconix SI9433BDY-T1-GE3

    MOSFET P-CH 20V 4.5A 8SO
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    DigiKey SI9433BDY-T1-GE3 Cut Tape 599 1
    • 1 $1.4
    • 10 $0.885
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    SI9433BDY-T1-GE3 Digi-Reel 599 1
    • 1 $1.4
    • 10 $0.885
    • 100 $1.4
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    SI9433BDY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI9433BDY-T1-E3

    Trans MOSFET P-CH 20V 4.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI9433BDY-T1-E3)
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    Avnet Americas SI9433BDY-T1-E3 Reel 2,500
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    Verical SI9433BDY-T1-E3 334 15
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    Arrow Electronics SI9433BDY-T1-E3 Cut Strips 334 13 Weeks 1
    • 1 $0.5171
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    • 100 $0.4167
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    Newark SI9433BDY-T1-E3 Reel 2,500
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    SI9433BDY-T1-E3 Cut Tape 2,500
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    Bristol Electronics SI9433BDY-T1-E3 2,851
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    Quest Components SI9433BDY-T1-E3 856
    • 1 $1.25
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    • 100 $0.625
    • 1000 $0.5
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    TTI SI9433BDY-T1-E3 Reel 2,500
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    TME SI9433BDY-T1-E3 1,191 1
    • 1 $1.52
    • 10 $0.83
    • 100 $0.69
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    ComSIT USA SI9433BDY-T1-E3 133
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    Avnet Asia SI9433BDY-T1-E3 15 Weeks 2,500
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    Chip-Germany GmbH SI9433BDY-T1-E3 76
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    Component Electronics, Inc SI9433BDY-T1-E3 330
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    EBV Elektronik SI9433BDY-T1-E3 20,000 14 Weeks 2,500
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    Vishay Intertechnologies SI9433BDY-T1-GE3

    Mosfet, P Channel, -20V, -4.5A, Soic-8, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:2.7V; Power Dissipation:1.3W Rohs Compliant: Yes |Vishay SI9433BDY-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI9433BDY-T1-GE3 Reel 2,500
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    SI9433BDY-T1-GE3 Cut Tape 1
    • 1 $0.949
    • 10 $0.791
    • 100 $0.635
    • 1000 $0.635
    • 10000 $0.635
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    Bristol Electronics SI9433BDY-T1-GE3 939
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    Quest Components SI9433BDY-T1-GE3 751
    • 1 $1.287
    • 10 $1.287
    • 100 $0.6435
    • 1000 $0.5148
    • 10000 $0.5148
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    TTI SI9433BDY-T1-GE3 Reel 7,500 2,500
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    Vishay Siliconix SI9433DYT1

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    Bristol Electronics SI9433DYT1 5,000
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    ComSIT USA SI9433DYT1 12,265
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    Find more SI9433 price and stock on Findchips.com

    SI9433 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9433BDY Vishay Siliconix MOSFETs Original PDF
    Si9433BDY-E3 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    Si9433BDY-T1-E3 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI9433BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A 8-SOIC Original PDF
    SI9433BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A 8-SOIC Original PDF
    Si9433DY Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si9433DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9433DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO Scan PDF
    Si9433DY SPICE Device Model Vishay P-Channel Enhancement-Mode MOSFET Original PDF
    SI9433DY-T1 Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF

    SI9433 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9433DY

    Abstract: No abstract text available
    Text: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si9433DY S-00652--Rev. 27-Mar-00

    Untitled

    Abstract: No abstract text available
    Text: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9433BDY 2002/95/EC Si9433BDY-T1-E3 Si9433BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si9433BDY

    Abstract: Si9433BDY-T1-E3
    Text: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9433BDY 2002/95/EC Si9433BDY-T1-E3 Si9433BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9433BDY 2002/95/EC Si9433BDY-T1-E3 Si9433BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si9433DY 08-Apr-05

    Si6433DQ

    Abstract: Si9424DY Si9433DY
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S


    Original     		PDF Si9433DY Si9424DY Si6433DQ S-47958--Rev. 15-Apr-96

    Si9433BDY

    Abstract: 7277-3
    Text: SPICE Device Model Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9433BDY S-52519Rev. 12-Dec-05 7277-3

    Untitled

    Abstract: No abstract text available
    Text: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9433BDY 2002/95/EC Si9433BDY-T1-E3 Si9433BDY-T1-GE3 11-Mar-11

    Si9433DY

    Abstract: Si9433DY SPICE Device Model
    Text: SPICE Device Model Si9433DY Vishay Siliconix P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9433DY 27-Jun-01 Si9433DY SPICE Device Model

    AN609

    Abstract: Si9433BDY
    Text: Si9433BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si9433BDY AN609 10-Aug-07

    Untitled

    Abstract: No abstract text available
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D


    Original     		PDF Si9433DY Si9424DY Si6433DQ S-51358--Rev. 18-Dec-96

    Si6433DQ

    Abstract: Si9424DY Si9433DY
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "5.4 0.100 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ S S S SO-8 S


    Original     		PDF Si9433DY Si9424DY Si6433DQ S-47958--Rev. 15-Apr-96

    SI9433BDY-E3

    Abstract: Si9433BDY
    Text: Si9433BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.2 0.060 @ VGS = −2.7 V −5.0 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9433BDY—E3 (Lead Free)


    Original     		PDF Si9433BDY Si9433BDY--E3 Si9433BDY-T1--E3 08-Apr-05 SI9433BDY-E3

    Untitled

    Abstract: No abstract text available
    Text: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si9433BDY 2002/95/EC Si9433BDY-T1-E3 Si9433BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si9433DY-T1

    Abstract: SI9433BDY-T1 DSA0042935 SI9433BDY-E3 Si9433DY Si9433BDY Si9433BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si9433BDY vs. Si9433DY Description: P-Channel, - 20 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9433BDY Replaces Si9433DY Si9433BDY-E3 (Lead (Pb)-free version) Replaces Si9433DY Si9433BDY-T1 Replaces Si9433DY-T1


    Original     		PDF Si9433BDY Si9433DY Si9433BDY-E3 Si9433BDY-T1 Si9433DY-T1 Si9433BDY-T1-E3 DSA0042935

    SI9433BDY-E3

    Abstract: Si9433BDY 40242
    Text: Si9433BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.2 0.060 @ VGS = −2.7 V −5.0 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9433BDY—E3 (Lead Free)


    Original     		PDF Si9433BDY Si9433BDY--E3 Si9433BDY-T1--E3 S-40242--Rev. 16-Feb-04 SI9433BDY-E3 40242

    Si9433DY

    Abstract: No abstract text available
    Text: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si9433DY 18-Jul-08

    SI9433BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si9433BDY 18-Jul-08

    si9433dy

    Abstract: Si6433DQ Si9424DY
    Text: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 Recommended upgrade: Si9424DY Lower profile/smaller size see: Si6433DQ S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G


    Original     		PDF Si9433DY Si9424DY Si6433DQ S-51358--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: Si9433BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.2 0.060 @ VGS = −2.7 V −5.0 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9433BDY—E3 (Lead Free)


    Original     		PDF Si9433BDY Si9433BDY--E3 Si9433BDY-T1--E3 18-Jul-08

    MAX795

    Abstract: Si9433DY MAX793 MAX794
    Text: 19-0366; Rev 6; 3/10 3.0V/3.3V Adjustable Microprocessor Supervisory Circuits The MAX793/MAX794/MAX795 microprocessor µP supervisory circuits monitor and control the activities of +3.0V/+3.3V µPs by providing backup-battery switchover, among other features such as low-line indication, µP


    Original     		PDF MAX793/MAX794/MAX795 MAX793/MAX795 MAX794 MAX795 Si9433DY MAX793

    AD8551

    Abstract: AD8551AR AD8552 AD8552AR AD8554 AD855x squarer
    Text: Zero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers AD8551/AD8552/AD8554 a FEATURES Low Offset Voltage: 1 ␮V Input Offset Drift: 0.005 ␮V/؇C Rail-to-Rail Input and Output Swing +5 V/+2.7 V Single-Supply Operation High Gain, CMRR, PSRR: 130 dB


    Original     		PDF AD8551/AD8552/AD8554 AD8551 11/02--Data AD8551 AD8551AR AD8552 AD8552AR AD8554 AD855x squarer

    SMD10P05L

    Abstract: 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum 2N3904 ICL7611 Si9433DY P-channel power mosfet
    Text: DESIGN SHOWCASE P-FET linear regulator has low dropout voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation voltage


    Original     		PDF SMD10P05L Si9433DY ICL7611 2N3904 SMD10P05L 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum 2N3904 ICL7611 P-channel power mosfet

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF