Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIC THYRISTOR Search Results

    SIC THYRISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SIC THYRISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    anode gate thyristor

    Abstract: No abstract text available
    Text: Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications Siddarth G. Sundaresana*, Eric Lieser and Ranbir Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA. a [email protected], *corresponding author


    Original     		PDF 5x1014 1x107 DEAR0000112) anode gate thyristor

    thyristor lifetime

    Abstract: No abstract text available
    Text: HIGH TEMPERATURE ULTRA HIGH VOLTAGE SIC THYRISTORS R. Singh, S. Creamer, E. Lieser, S. Jeliazkov, S. Sundaresan GeneSiC Semiconductor Inc. 43670 Trade Center Place, Suite 155, Dulles, VA 20166, USA. Email: [email protected]; Phone: 703-996-8200x105.


    Original     		PDF 703-996-8200x105. DE-FG0207ER84712, thyristor lifetime

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications


    Original     		PDF GA080TH65-CAU

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications


    Original     		PDF GA060TH65-CAU

    Untitled

    Abstract: No abstract text available
    Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA060TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications


    Original     		PDF GA040TH65-CAU

    Untitled

    Abstract: No abstract text available
    Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA040TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA060TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications


    Original     		PDF GA040TH65-CAU

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications


    Original     		PDF GA060TH65-CAU

    Untitled

    Abstract: No abstract text available
    Text: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA080TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: GA080TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA080TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor


    Original     		PDF GA040TH65 OT-227

    Untitled

    Abstract: No abstract text available
    Text: Electrical Datasheet GA080TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 80 A = 4.2 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications


    Original     		PDF GA080TH65-CAU

    MOS Controlled Thyristor

    Abstract: thyristor lifetime
    Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs Siddarth G. Sundaresan, Hany Issa, Deepak Veereddy and Ranbir Singh GeneSiC Semiconductor, Inc., 43670 Trade Center Pl, Suite 155, Dulles, VA 20166, USA [email protected] Keywords: Silicon Carbide, GTO, Thyristors, High-Voltage, High-Current, Pulsed Power.


    Original     		PDF DE-FG02-07ER84712)

    Untitled

    Abstract: No abstract text available
    Text: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have


    Original     		PDF r1996, XVI-14.

    P-Channel IGBT

    Abstract: No abstract text available
    Text: Novel SiC MOS-Bipolar Switches for >10 kV Applications Ranbir Singh GeneSiC Semiconductor Inc. 25050 Riding Plaza, Suite 130-801, South Riding, VA 20152 571-265-7535 ph , 703-373-6918 (fax), [email protected] (email). MOS-based gate control is considered a necessity for the applicability of a switch to


    Original     		PDF

    40C1500

    Abstract: T1200 T1200N T1209N k005
    Text: E G-AKTIENGESELLSCHAFT SIC D • QDSTmS D00b513 □ M A E 6 6 p T 1200 N T 1209 N Typ enreihe/Type range T1200N 1200 1400 1600 1800 _T 1 2 0 9 N


    OCR Scan     		PDF T1200N T1209N GG0b213 41787at T1H0S14 17/Detall 40C1500 T1200 T1209N k005

    DIN40040

    Abstract: T35N TM200
    Text: E G-AKTIEN6ESELLSCHAFT SIC B • 005^415 QDGbü7fl 1 ■AE 3G T35N Typenrelhe/Type range_T 3 5 N 400* 600 800 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm, Urrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung


    OCR Scan     		PDF

    uv flame sensor

    Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
    Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­


    OCR Scan     		PDF 2771J 161-IMO uv flame sensor thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J

    s2177

    Abstract: No abstract text available
    Text: E ¿-A K TIEN G ESELLSCH A FT SIC D • D02T41S OQDblOB 4 ■ AE66 T85N Typenreihe/Type ränge T85N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U d r m , U r h m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom


    OCR Scan     		PDF D02T41S s2177

    Untitled

    Abstract: No abstract text available
    Text: TECCÔR ELE CTRONICS INC 24E D- Afl72fln 0001311 7 ~ 2 S -Z 2 > TECCOR ELECTRONICS, INC. 1801 HURD DRIVE IRVING, TEXAS 75038-4385 PHONE 214/580-1515 FAX 214/550-1309 ALTERNISTORS General Description 15-40 Amps T h e se Alternistors are offered in three b a sic


    OCR Scan     		PDF Afl72fln

    T218N

    Abstract: No abstract text available
    Text: G- A K T I ENG ES EL LS CH AF T SIC D • 002^415 Q0Gbl42 3 ■ AEGG 0 T218N Typenreihe/Type range_ T218N 400 * 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte UoRMi U r r m Periodische Vorwärts-und Rückwärts-Spitzensperrspannung


    OCR Scan     		PDF 00Gbl42 T218N T218N 125cC rsin23