SIC VJFET Search Results

SIC VJFET Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1ZMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TRS8E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L
TRS10E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L
TRS6E65H		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L

SIC VJFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT9402 Abstract: No abstract text available Text: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely	Original	com/micnotes/APT9402 APT9402	PDF
Untitled Abstract: No abstract text available Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States	Original		PDF
JFET semisouth Abstract: SJEP120R050 SGDR600P1 SEMISOUTH SJEP120 SJEP120R063 AN-SS1 ixdd509 SiC JFET JFET Text: Demo Board Preliminary SGDR600P1 Two-Stage Opto Coupled Gate Driver Demo Board The SGDR600P1 is an optoisolated, two-stage gate driver optimized for high speed, hard switching of SemiSouth's SJEP120R050 and SJEP120R063 normally-off SiC VJFETs. The SGDR600P1 gate driver provides a peak output current of +6/- 3A	Original	SGDR600P1 5V/-15V SGDR600P1 SJEP120R050 SJEP120R063 SJEP120R050 JFET semisouth SEMISOUTH SJEP120 AN-SS1 ixdd509 SiC JFET JFET	PDF
Untitled Abstract: No abstract text available Text: artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices Ranbir Singh and Michael Pecht 1932-4529/08/$25.00©2008 IEEE E volutionary improvements in silicon Si power devices through better device designs, processing techniques, and material quality have	Original	r1996, XVI-14.	PDF
westinghouse transistors Abstract: No abstract text available Text: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,	Original	10-kV westinghouse transistors	PDF
Untitled Abstract: No abstract text available Text: SILICON CARBIDE “SUPER” JUNCTION TRANSISTORS OPERATING AT 500 °C Siddarth Sundaresan1, Ranbir Singh1, R. Wayne Johnson2 1 GeneSiC Semiconductor Inc. Dulles, VA 20166 2 Auburn University, Auburn, AL 36849 email:[email protected], phone: 703 996-8200	Original		PDF
SJEP120R125 Abstract: SiC-JFET AN-SS1 sjep120r063 SiC JFET SEMISOUTH SEMISOUTH sjep120r125 silicon carbide JFET SiC BJT SJEP120 Text: Application Note AN-SS1 Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use Table of Contents 1. 2. 3. 4. 5. Page Device Overview . 2	Original		PDF
LTTS e3 Abstract: gbs transistors Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,	Original	3A001 3A002, LTTS e3 gbs transistors	PDF