Untitled
Abstract: No abstract text available
Text: SIEMENS Dala Sheet 01.98 Advance Information C161RI Revision History: 1998-01 Advance Information Previous Releases: 1997-12 Advance Information Page Subjects 7 RSTIN description completed with bidirectional reset. Edition 1998-01 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation
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C161RI
D-81541
GPR05365
P-TQFP-100-1
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Untitled
Abstract: No abstract text available
Text: Device Specifications C509-L SIEMENS 11 Device Specifications 11.1 Absolute Maximum Ratings Ambient temperature under bias r A . Storage temperature (7stg) .
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C509-L
fiS35bQ5
P-MQFP-100-2
35b05
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v5ac
Abstract: AM2 Siemens FM stereo receiver 19Khz 57Khz FM stereo MPX Decoder RL40 RL41 VIF450 grund power 400hz High Level Mixer
Text: ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 Edition 16.3.99 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995. All Rights Reserved. Attention please! As far as patents or other rights of third parties
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TLE4215
Abstract: transistor k 4215 IEP00718
Text: fc.DE J> • fi23StiGS SIEMENS DüSOblE Ib l « S IE G SIEMENS AKTIENGESELLSCHAF Intelligent Double High-Side Switch 2 x 0.5 A TLE 4215 Features • Double high-side switch, 2 • Power limitation x 0.5 A • Overtemperature shutdown • Status monitoring
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23StiGS
P-DIP-16
Q67000-A8184
235b05
aE35fc
0G50b21
aed00009
aed00912
TLE4215
transistor k 4215
IEP00718
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din IEC 68
Abstract: dpm 116
Text: SIEMENS 1 Qualität Der Bereich Halbleiter HL der Siemens AG plant, entwickelt, fertigt und vertreibt ein breites Spektrum von Halbleiter-Bau elementen und optoelektronischen Kom ponenten und erbringt die dazu erforderli chen Dienstleistungen. In diesem Markt ist hohe Qualiät der Pro
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Untitled
Abstract: No abstract text available
Text: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families
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023SbD5
81C52
VPS05094
P-DSO-20-1
Q67100-H9017
P-DIP-16
IES008H
81C52
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Untitled
Abstract: No abstract text available
Text: bOE II • SIEMENS ÌE3 5b OS 0G5G3b1 3T1 H S I E 6 SIEMENS AKTIENGESELLSCHAF Programmable Timer SAE 0530; SAE 0531 ; SAE 0532 Preliminary Data Bipolar IC Features • Direct operation from AC line or DC supply • Time base: 50/60 Hz line frequency or any clock
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P-DIP-18-1
E35b05
60-Hz
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BC308
Abstract: bc307 siemens BC307 bc307a BC 309 BC307B Q62702-C285 BC 307 BC309C bc 374
Text: SIEMENS 51E D • flE35bD5 004155b 5T1 « S I E G SIEMENS AKTIENGESELLSCHAF " p 2 -*n -z i PNP Silicon AF Transistors BC 307 . BC 309 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 237, BC 238, BC 239 NPN
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flE35bD5
004155b
Q62702-C703
Q62702-C283
Q62702-C324
Q62702-C704
Q62702-C285
Q62702-C286
Q62702-C393
Q62702-C705
BC308
bc307 siemens
BC307
bc307a
BC 309
BC307B
BC 307
BC309C
bc 374
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bf 578
Abstract: u535b BF870 BF marking code BF872 ABE 029 BF npn U535
Text: SIE D SIEMENS • fl235b05 GÜHlüSfl Ü17 « S I E G SIEMENS AKTIENGESELLSCHAF PNP Silicon Transistors with High Reverse Voltage • • • • BF 870 BF 872 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 869, BF 871 NPN
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235b05
Q62702-F685
Q62702-F677
O-202
BF872
10-nA
bf 578
u535b
BF870
BF marking code
ABE 029
BF npn
U535
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UE43-2
Abstract: No abstract text available
Text: i+7E D • 6235b05 QG33ÖÖ7 7 «SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus and 1 K Write Protection SDA 3526-1 Preliminary Data MOS IC Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM
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6235b
UE43-2
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881 bf
Abstract: bf881 BF871 BF869 7A SF marking B44 BF872 BF marking code
Text: SIEMENS m 51E T> A235b05 G04iaS4 471 « S I E G SIEMENS AKTIENGESELLSCHAF r ^ 3 NPN Silicon Transistors with High Reverse Voltage • • • • - 0 5 BF 869 . BF 881 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 870, BF 872 PNP
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235b05
T-53-05
Q62702-F683
Q62702-F676
Q62702-F794
O-202
BF871
6235b05
T-33-05
881 bf
bf881
BF869
7A SF
marking B44
BF872
BF marking code
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tle4201
Abstract: tle 4201
Text: LOE D A23SbGS 005044L 7Ô2 • SIEG SIEMENS SIEMENS AKT IENûESELLSCHAF 1 ^ 5 3 - 1 3 - 3 5 DC Motor Driver TLE 4201 Features • Max. output current 2.5 A • Open-loop gain 80 dB typ. • PNP input stages • Large common-mode input-voltage range • Wide control range
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A23SbGS
005044L
Q67000-A8080
P-DIP-18-1
Q67000-A2285
S35bOS
0GSDM53
fl235b05
00S0M54
tle4201
tle 4201
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FR 151 diode
Abstract: SiEMENS PM 350 98 SIMOPAC Module BSM 151 F C67076-A1050-A2 siemens 350 98 BSM151F siemens 350 BSM151 V103 SiEMENS EC 350 98 0
Text: 47E » SIEMENS • ÔEBSbDS SIEMENS DOEbMMI 3 ■ SIE6 AKTI ENGESELLSCHAF - r - 3 cM 5 SIMOPAC Modules Vas I = 500 V 56 A = d Ä D S o n • • • • • • • BSM 151 F BSM 151 FR = 0 .1 1 fl Power module Single switch FREDFET N channel Enhancement mode
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C67076-A1050-A2
C67076-A1056-A2
bsm151f151fr
sim00061
bsm151f
151fr
BSM151
T-39-15
FR 151 diode
SiEMENS PM 350 98
SIMOPAC Module BSM 151 F
C67076-A1050-A2
siemens 350 98
siemens 350
V103
SiEMENS EC 350 98 0
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BSM692F
Abstract: bsm siemens
Text: 47E D • SIEMENS fl235bDS D G 2 b S b ô G ■ SIEG SIEMENS AKTIENGESEL LSC HAF T 1 3 - 0 1 BSM 692 F SIMOPAC Module y DS = 1000 v Id =6 x 9A R DS on = 1.25 Q • • • • • • • Power module 3-phase full-bridge FREDFED N channel Enhancement mode
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fl53SbOS
C67076-A1503-A2
BSM692F
SIM0026S
fl23SbÃ
002bS74
SIM002
bsm siemens
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10n65
Abstract: No abstract text available
Text: SIEMENS TLE 5224 G2 Smart Two Channel Low-Side Switch Features Product Summary • Power limitation • Overtemperature monitoring • Overload protection • Short circuit protection • Diagnostic feedback • Overvoltage protection • pC compatible input
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7006-A
10n65
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
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Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
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Untitled
Abstract: No abstract text available
Text: SIEMENS K TY16-6 Spreading Resistance Silicon Temperature Sensor • • • • • Small metal housing with leadwires Fast response High reliability due to multilayer gold contacts n-conducting silicon crystal Polarity independent due to symmetrical construction
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TY16-6
Q62705-K128
40/PP7)
GPD0563B
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. D • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code Pin Configuration BAT 15-020 D Marking
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Q62702-D1263
Q62702-D3450
Q62702-D1280
Q62702-D1289
EHA07024
0235bOS
00bbb2S
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAT 15-. S • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Marking Type BAT 15-020 S Ordering Code Pin Configuration
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Q62702-D1262
Q62702-D1279
Q62702-D1271
Q62702-D1288
EHA07001
BAT15-020
BAT15-050
BAT15-110
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-099R S8 Ordering Code
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14-099R
Q62702-A0042
14-099R
OT-143
EHA07012
fl535bQ5
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2 Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters Grenzwerte 2 Maximum Ratings Die in den Datenblättern angegebenen Grenzwerte sind absolute Werte. Wird einer dieser Grenzwerte überschritten, so kann das zur Zerstörung des Halbleiters
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amplitude modulator gilbert cell
Abstract: PMB2210 BYX4
Text: SIEMENS Quadrature Modulator Circuit PMB 2210 Preliminary Data Bipolar 1C Features • Double-balanced mixer for 1 GHz with two Gilbert cells • Linear modulating inputs • Symmetrical circuitry • Production of orthogonal carriers by two external resonant circuits
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PMB2210
AE35L
P-DSO-20
fi235bU5
c12Da
amplitude modulator gilbert cell
PMB2210
BYX4
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode • SMBD 6050 For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 1- -O rv j 3 O EHA070M Maximum Ratings Parameter
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Q68000-A8439
OT-23
H35L0S
D1E251Q
53SbOS
D12H512
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6050
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter
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Q68000-A8439
OT-23
6050
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