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    6EP1931-2FC01

    Abstract: Sitop power 10 SITOP 6EP1333-1SL11 Siemens siemens sitop 6ep1436-1sh01 siemens 6ep1334-2AA00 6EP1935-6ME21 siemens sitop power 20 6EP1436-1SH01 6EP1931-2eC01 6EP1331-1SL11 siemens sitop power 20 6ep1353-2ba00
    Text: SITOP Power Supplies Dimensions SITOP Power Single-Phase L1N L+L+M+M Input AC 120/230V Output DC 24V/1,3A L+L+M+M L1N Input AC 120/230V Output DC 24V/1,3A SIEMENS SIEMENS 3.54 90 3.54 (90) LOGO 1 Power 1.3 LOGO! Power 2,5 x2 34 x2 34 2.05 (55) 2.80 (72)


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    PDF 120/230V 6EP1311-1SH11, 6EP1322-1SH01, 6EP1352-1SH01, 6EP1332-1SH41, 6EP1352-1SH11, 6EP1311-1SH01, 6EP1321-1SH01, 6EP1351-1SH01, 6EP1931-2FC01 Sitop power 10 SITOP 6EP1333-1SL11 Siemens siemens sitop 6ep1436-1sh01 siemens 6ep1334-2AA00 6EP1935-6ME21 siemens sitop power 20 6EP1436-1SH01 6EP1931-2eC01 6EP1331-1SL11 siemens sitop power 20 6ep1353-2ba00

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


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    PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    Siemens photodiode

    Abstract: PIN photodiode crosstalk laser diode 1550 nm 1480 nm diode laser
    Text: SBH92314x FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/InP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH92314x Emitting-/1300 Siemens photodiode PIN photodiode crosstalk laser diode 1550 nm 1480 nm diode laser

    h1155

    Abstract: H1182 H1102 H1105 H1125 B82442-H1123-K B82442-H1102-K B82442-H1122-K B82442-H1152-K B82442-H1182-K
    Text: EMC Components RF Chokes High Current B82442-H Data Book Supplement RF Chokes SIMID 05 Series – High Current B82442-H SIMID 05 Siemens-Miniature-Inductors Rated inductance 1 to 10000 µH Rated current 0,035 to 2,5 A


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    PDF Allg/Datenblaetter/KO-dt-eng/DA-B82442H-e B82442-H h1155 H1182 H1102 H1105 H1125 B82442-H1123-K B82442-H1102-K B82442-H1122-K B82442-H1152-K B82442-H1182-K

    laser diode 1550 nm

    Abstract: Siemens photodiode InGaAs Photodiode 1550nm fp diode pigtail nm
    Text: SBH52414x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH52414x Emitting-/1550 laser diode 1550 nm Siemens photodiode InGaAs Photodiode 1550nm fp diode pigtail nm

    ch340

    Abstract: FEDERAL PACIFIC BREAKER Cutler-Hammer Cutler-Hammer bd1515 a1515 THQL1120 BAB1015 Cutler-Hammer GFCB250 Challenger breaker Challenger C120 Circuit Breaker Federal Pacific
    Text: Replacement Circuit Breakers Replacement Circuit Breakers Replacement Circuit Breakers To Order, Call Connecticut Electric 2001 Rev. 8/01 Toll-Free 800/472-3819 Page Cutler-Hammer . . . . . . . . . . 2 Type CH CHB CC BR–C BD-C BAB BRD–A Federal Pacific Electric . . . . .8


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    PDF UBIF0215N UBIZ2100 UBIF0220N UBIZ2125 UBIF0230N UBIZ3030 128th ch340 FEDERAL PACIFIC BREAKER Cutler-Hammer Cutler-Hammer bd1515 a1515 THQL1120 BAB1015 Cutler-Hammer GFCB250 Challenger breaker Challenger C120 Circuit Breaker Federal Pacific

    siemens logo application examples

    Abstract: san yau dc motor IEC 60252 siemens metal film resistor B3243 cold micro-electronics ltda fz 98 1500 6.3
    Text: Metallized Polypropylene Capacitors for AC Applications Short Form Catalog 1999 http://www.siemens.com/pr/index.htm Designing the Future Sustained growth, dynamic demand and the highest quality standards are just as typical of film capacitors as they are of


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    incremental encoders siemens

    Abstract: absolute encoders siemens Hall sensors Siemens hall sensor sot-143 siemens automotive gmr siemens gmr s4 siemens 230 92 siemens Hall sensors linear 2000 SMD Hall sensors linear D siemens gmr
    Text: Magnetic Sensors fin eo n. co m GaAs Hall Sensors Magneto Resistors Giant Magneto Resistive Sensors ht tp :// w w w. in Product Information 05.99 Linear GaAs Hall Sensors Applications Features ț ț ț ț ț ț ț ț ț Position sensors Distance measurement


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    PDF B143-H7098-G2-X-7600 incremental encoders siemens absolute encoders siemens Hall sensors Siemens hall sensor sot-143 siemens automotive gmr siemens gmr s4 siemens 230 92 siemens Hall sensors linear 2000 SMD Hall sensors linear D siemens gmr

    lvds MUX/DEMUX

    Abstract: KM26 plc siemens str 6676 Siemens 2815 rc 144 amplifier siemens BD 877 DK-2750 10 gb laser diode
    Text: s Our Competence for Your Own Design Bipolar RF-ICs for High Speed Data Communication Siemens Semiconductors. Technical Specifications: Superiority in Facts and Figures Technical Specifications: MUX/DEMUX Ī Gate Array based MUX/DEMUX Ī dedicated I/O cells e.g. LVDS, Open Collector, ECL


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    PDF 726Yeoksam-dong, B191-H7291-X-X-7600 lvds MUX/DEMUX KM26 plc siemens str 6676 Siemens 2815 rc 144 amplifier siemens BD 877 DK-2750 10 gb laser diode

    siemens gmr

    Abstract: siemens magnetic sensors siemens wheel speed sensor siemens soft starter SIEMENS WASHING machine Magnetic ink detection hand drier sensor design circuits PLC eberle 511 GMR C6 hand drier sensor design components
    Text: s Magnetic Sensors ht Application Notes 10.98 tp :/ se /ww m w ico .s nd iem uc en to s. r/ de / Giant Magneto Resistors Edition 10.1998 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, 81541 München Siemens AG 1998.


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    PDF B143-H7276-X-X-7600 siemens gmr siemens magnetic sensors siemens wheel speed sensor siemens soft starter SIEMENS WASHING machine Magnetic ink detection hand drier sensor design circuits PLC eberle 511 GMR C6 hand drier sensor design components

    WS80a

    Abstract: b25353 siemens SPC 4320 C3227* transistor b25353-k1118-k4 siemens matsushita kondensator B25834-K6106-K9 K4106 V245 datenbuch
    Text: Inhaltsverzeichnis Anwendungen- und Bauformen-Übersicht Seite 5 9 Anwendungen Kondensator-Fragebogen 17 20 Allgemeine technische Angaben 23 Angaben zur Qualität 55 Gleichspannungs-Kondensatoren 63 Wechselspannungs-Kondensatoren 163 Kondensator-Befestigungen


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    V23082-A1005-A401

    Abstract: V23082 relay mini schrack ra 900 A23001-G11-P038-X-7600 siemens modules GR 60 48 V 120 A siemens 230 98 L-1017 L1017 vde 0435 0110 Gr C
    Text: Miniature Power Relay Mini L Product Information Miniature Power Relay Mini L V23082 PCB relay for DC voltage, neutral, monostable Features ● High switching capacity of 10 A, small dimensions ● High ambient temperature of 85 °C ● Clearance and creepage distances of the basic insulation


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    PDF V23082 ECR0976-I S-16493 TR-80040 N-0518 A23001-G11-P038-X-7600 V23082-A1005-A401 V23082 relay mini schrack ra 900 A23001-G11-P038-X-7600 siemens modules GR 60 48 V 120 A siemens 230 98 L-1017 L1017 vde 0435 0110 Gr C

    VPT05155

    Abstract: buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051
    Text: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 90 Vds 600 V 10 ^bS on Package Ordering Code 4.5 A 1.6Í2 TO-220 AB C67078-S1321-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values


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    PDF VPT05155 O-220 C67078-S1321-A2 VPT05155 buz90 SiEMENS PM 350 98 C67078-S1321-A2 s34 diode transistor buz 90 GP-051

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)


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    PDF 72-Bit 72V1600GS-50/-60 72V1610GS-50/-60 023St HYM72V1600/10GS-50/-60 72-ECC L-DIM-168-7 16MX72 DM168-7

    BST-T68S346

    Abstract: BSTT66146 BSTT66166 BStT68S346 BSTT66133 SIEMENS BSTT66166 BSTT68H280 BSTT68L213 bstt68L BSTT66
    Text: SIEMENS AKTIENGESELLSCHAF flflD D ñSBStiQS QG1S157 1 • SIEG 7^ Z S " - 'Z'' Phase-control thyristors TVpo ^DRM V BStT65 80 1 200 BStT65 90 1 350 BStT65110 1 650 BStT66133 2000 BStT66146 2 200 BStT66166 2 500 B StT68H 253 3 800 B StT68H 266 4 000 B StT68H 280


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    PDF fl235L G01S1S7 BStT65 BStT65110 BStT66133 BStT66146 BStT66166 BStT68H253 BStT68H266 BST-T68S346 BStT68S346 SIEMENS BSTT66166 BSTT68H280 BSTT68L213 bstt68L BSTT66

    SH100E

    Abstract: siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191
    Text: 7 1991 SIEMENS ASIC Product Description SH100E ECL/CML Gale Amy Family FEATURES • Gate complexities from 1,500 to 16,000 gates ■ 120 ps gate delay, 90 ps differential • 1.5 GHz D flip-flop, 1.7 GHz differential ■ Both ECL and CML macro families ■ TTL I/O available


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    PDF SH100E 10KH/100K M33S001 SH100E siemens SH100E elxr siemens Nand gate SH100E5 TRANSISTOR K 2191

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECO Module HYM 72V4000GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization for PC main m em ory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)


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    PDF 72-Bit 72V4000GS-50/-60 fl23SLDS 72-ECC L-DIM-168-5 GLD05927 D1234Q5

    VT244A

    Abstract: No abstract text available
    Text: SIEMENS 8M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Prelim inary Inform ation • 8 388 608 w ords by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle tim e (-50 version)


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    PDF 72-Bit 72V8000GS-50/-60 72V8010GS-50/-60 400/10GS-60 HYM72V8000/10GS-50/-60 L-OIM-168-4 VT244A

    smd d9d

    Abstract: D9D smd
    Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time


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    PDF 72-Bit 72V4000GS-50/-60 72V4010GS-50/-60 L-DIM-168-5 72V4000/10GS-50/-60 72-ECC smd d9d D9D smd

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle tim e (-50 version) 60 ns access tim e


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    PDF 72-Bit 72V4000GS-50/-60 72V4010GS-50/-60 fi23SbGS 72V4000/1OGS-50/-6O 72-ECC 0235hG5 fl23SbOS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SBH92314X FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/lnP-PIN Photodiode • • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH92314X Emitting-/1300

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SBH52414X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983


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    PDF SBH52414X Emitting-/1550

    FE8006-45

    Abstract: EI 33 5mh 8041-33 FE8006-125 EL Ei 33 transformer fe8041-33 transformateurs N3 3kv SEC smd code 6204 toshiba chokes
    Text: Telecom P ro d u cts PF600.A 12/98 P ro d u its Telecom Table of Contents Sommaire XL Puise-FEE A T E C H N I T R O L C O M P A N Y FEE ISDN Guide . 3-4 So Interface . 5


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    PDF PF600 FE8006-45 EI 33 5mh 8041-33 FE8006-125 EL Ei 33 transformer fe8041-33 transformateurs N3 3kv SEC smd code 6204 toshiba chokes

    62703-F

    Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
    Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure


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    PDF 0G1734Ô CFY30 62703-F OT-143 fl23b32Q GG173S7 T--31--25 CFY30 GaAs FET cfy 19 siemens gaas fet