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    SIEMENS IGBT BSM 400 GA 120 Search Results

    SIEMENS IGBT BSM 400 GA 120 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS IGBT BSM 400 GA 120 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    module bsm 20 gp 60

    Abstract: module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge
    Text: Power electronics Permanent innovation in IGBT modules Since the mid-80s, the technical specifications of IGBTs have improved substantially, opening up applications long reserved for bipolar components such as thyristors or GTOs. ver since the Siemens Semiconductor Group and eupec GmbH, a power


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    PDF mid-80s, products/36/3622 module bsm 20 gp 60 module bsm 25 gp 120 siemens igbt BSM 300 Eupec bsm 25 gb 120 siemens igbt BSM 50 gp 120 siemens igbt BSM 100 gb siemens igbt BSM 75 gb 100 eupec igbt BSM 100 gb Eupec bsm 75 gb 120 IGBT full bridge

    bsm 25 gd 1200 n2

    Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
    Text: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich


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    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


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    PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM 400 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type £ BSM 400 GA 120 DN2 BSM 400 GA 120 DN2 S Ordering Code 1200V 550A SINGLE SWITCH C67070-A2302-A70 1200V 550A


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    PDF C67070-A2302-A70 C67070-A2308-A70 fiE35t 23Sfc

    siemens igbt

    Abstract: siemens igbt BSM 400 GA 120 C1645 siemens igbt BSM 200 GA 120
    Text: SIEMENS BSM 400 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate UJ i? Type b 1200V 550A Package Ordering Code BSM 400 GA 120 DN2 SINGLE SWITCH C67070-A2302-A70 BSM 400 GA 120 DN2 S


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    PDF C67070-A2302-A70 C67070-A2308-A70 BSM400 siemens igbt siemens igbt BSM 400 GA 120 C1645 siemens igbt BSM 200 GA 120

    siemens igbt BSM 300

    Abstract: siemens igbt BSM 200 GA 120 NC4000
    Text: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes


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    PDF C67076-A2007-A2 siemens igbt BSM 300 siemens igbt BSM 200 GA 120 NC4000

    siemens igbt BSM 200 GA 120

    Abstract: 1C00 siemens bsm 284 f siemens R9
    Text: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


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    PDF 0D45R20 C67076-A2000-A2 siemens igbt BSM 200 GA 120 1C00 siemens bsm 284 f siemens R9

    siemens igbt BSM 200 GA 120

    Abstract: siemens igbt BSM 300 siemens igbt BSM 300 ga 120 GA120DN2 igbt BSM 300 GA 160
    Text: SIEMENS BSM300 GA 120 DN2 IGBT Power Module •Single switch 1Including fast free-wheeling diodes 1Package with insulated metal base plate Package Ordering Code 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 1200V 430A SSW SENSE 1 C67070-A2017-A70 Type VCE BSM 300 GA 120 DN2


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    PDF BSM300 C67076-A2007-A70 C67070-A2017-A70 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 siemens igbt BSM 300 ga 120 GA120DN2 igbt BSM 300 GA 160

    siemens igbt BSM 200 GA 120

    Abstract: siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 SIS00025 C67070-A2017-A70 siemens igbt chip
    Text: SIEMENS BSM 300 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Package Ordering Code BSM 300 G A 120 DN2 1200V 430A SINGLE SWITCH 1 C67076-A2007-A70 BSM 300 GA 120 DN2 S 1200V 430A


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    PDF C67076-A2007-A70 C67070-A2017-A70 023SbGS fl235b05 SIS00025 235bOS 0Qfi02b3 SIS00041 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 igbt module bsm 300 igbt BSM 300 GA 120 siemens igbt BSM 10 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 siemens igbt chip

    siemens igbt BSM 200 GA 120

    Abstract: SIS00025
    Text: SIEMENS BSM 200 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Type ^CE Package Ordering Code BSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70 BSM 200 GA 120 DN2 S


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    PDF C67076-A2006-A70 C67070-A2006-A70 23SbOS DH505S1 A23Sb05 00AD25c! SIS00025 235b05 siemens igbt BSM 200 GA 120 SIS00025

    siemens igbt BSM 200 GA 120

    Abstract: igbt module bsm 200 siemens igbt BSM 200 GA 100 siemens igbt siemens igbt BSM 200 GA 100 d
    Text: SIEMENS BSM 200 GA 120 DN2 IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate Ordering Code SINGLE SWITCH 1 C67076-A2006-A70 BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70 Ui


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    PDF C67076-A2006-A70 C67070-A2006-A70 siemens igbt BSM 200 GA 120 igbt module bsm 200 siemens igbt BSM 200 GA 100 siemens igbt siemens igbt BSM 200 GA 100 d

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM 200 GA 170 DN2 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on.m in = O hm UJ Type Package b Ordering Code BSM 200 G A 170 DN2 1700V 290A SINGLE SWITCH 1


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    PDF C67070-A2705-A67 C67070-A2707-A67 fi23StiOS DDflG341 235b05

    siemens igbt BSM 300

    Abstract: igbt BSM 300 GA 160 ga 170 ga 39 diode
    Text: SIEMENS BSM 300 GA 170 DN2 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • ^G on.min = 5.6 Ohm Type ^CE BSM 300 GA 170 DN2 1700V 440A h Package Ordering Code SINGLE SWITCH 1


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    PDF C67070-A2706-A67 siemens igbt BSM 300 igbt BSM 300 GA 160 ga 170 ga 39 diode

    igbt module bsm 200

    Abstract: siemens igbt BSM 200 GA 100 d siemens igbt BSM 200 GA 120 SIS00025 siemens igbt BSM 300 ga 120 siemens igbt BSM 300 siemens igbt BSM 200 GA 100
    Text: SIEMENS BSM 200 GA 170 DN2 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on.min = 6-8 Ohm Type Package BSM 200 GA 170 DN2 ^CE h 1700V 290A Ordering Code SINGLE SWITCH 1


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    PDF C67070-A2705-A67 C67070-A2707-A67 GA170DN2 SIS00025 igbt module bsm 200 siemens igbt BSM 200 GA 100 d siemens igbt BSM 200 GA 120 SIS00025 siemens igbt BSM 300 ga 120 siemens igbt BSM 300 siemens igbt BSM 200 GA 100

    siemens igbt BSM 200 GA 120

    Abstract: No abstract text available
    Text: SIEMENS BSM 200 GA 120 D IGBT Module Prelim inary D ata V CE = 1200 V / c = 275 A at Tc = 25 C / c = 200 A at T c = 80 C • • • • • Power m odule Single switch Including fast free-wheel diodes Package with insulated metal base plate Package outlines/C ircuit diagram : 41'


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    PDF C67076-A2006-A2 siemens igbt BSM 200 GA 120

    siemens igbt BSM 200 GA 120

    Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100
    Text: bDE T> m 023SbQ5 GG4SCU E 5b2 « S I E G SIEMENS S X E K N S AKTIENSESELLSCHAF 7 IGBT Module Preliminary Data ^ ? - ^ 5 " BSM 200G A120D VCE = 1200 V / C = 275 A at Tc= 25 C / c =200 A at r c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


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    PDF 0235fc GG4SC11E C67076-A2006-A2 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100

    BT diode

    Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
    Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,


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    siemens BSM b2

    Abstract: smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R
    Text: Technische Angaben SIPMOS-Leistungstransistoren und Dioden SIPMOS-Leistungstransistoren Transistoren im Bereich 50 V . 1000 V, 1,5 A . 60 A und 18 mQ . 8 Q. P -K a n a l N-Kanal Produktpalette • • • • • N- und P-Kanal-Anreicherungstypen FREDFET


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    PDF B152-B6299-X-X-7400 siemens BSM b2 smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R

    BSM200GA100D

    Abstract: bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 GA100D stt25
    Text: bOE D fl23SbD5 OOMS^OM 4Tb • S I E G ■ SIEMENS SIEMENS AKTIENGESELLSCHAF BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V J c = 2 7 5 A at r c = 25 C / c = 200 A at T c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


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    PDF fl23SbD5 BSM200GA100D GA100D C67076-A2001-A2 SII00253 SII00254 BSM200GA100D bsm200ga100 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 ga 120 siemens igbt BSM 200 GA 100 stt25

    10GD60DN2

    Abstract: 1700V-Types E3224 GB120 GAL 700
    Text: IGBT Standard Modules Siemens Type V ce V •c RthJC Plot VcEsat A K/W w V outline < 600V-Types 3-Phase-Full-Bridges BSM 10G D 60D N 2 600 6 x 10 3.5 35 2.1 3 BSM 15G D 60D N 2 600 6 x 15 2.9 50 2.1 3 BSM 20 GD 60 DN 2 600 6x20 1 .6 90 2.1 4 BSM 20 GD 60 DN 2 E3224


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    PDF 00V-Types 10GD60DN2 15GD60DN2 E3224 200V-Types 700V-Types 2x150 1700V-Types GB120 GAL 700

    siemens igbt BSM 300

    Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 200 GA 120 siemens igbt BSM 100 gb 600V-Types bsm 300 ga 100 siemens igbt BSM 25gd GAL 700 1700V-Types GAL 200 gb
    Text: IGBT Standard Modules Siemens Type V ce V •c RthJC Plot VcEsat A K/W w V outline < 600V-Types 3-Phase-Full-Bridges BSM 10G D 60D N 2 600 6 x 10 3.5 35 2.1 3 BSM 15G D 60D N 2 600 6 x 15 2.9 50 2.1 3 BSM 20 GD 60 DN 2 600 6x20 1 .6 90 2.1 4 BSM 20 GD 60 DN 2 E3224


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    PDF 00V-Types 10GD60DN2 15GD60DN2 E3224 200V-Types 700V-Types 2x150 siemens igbt BSM 300 siemens igbt BSM 150 gb 100 d siemens igbt BSM 200 GA 120 siemens igbt BSM 100 gb 600V-Types bsm 300 ga 100 siemens igbt BSM 25gd GAL 700 1700V-Types GAL 200 gb

    siemens igbt BSM 25GD 100D

    Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
    Text: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11


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    PDF O-220AB O-220 2x100 2x150 100GAL siemens igbt BSM 25GD 100D siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d

    PSL-80

    Abstract: siemens igbt BSM 200 GA 120
    Text: SIEMENS BSM 200 GA 100 D IGBT Module Preliminary Data V CE = 1000 V / c = 275 A at Tc = 25 C I c = 200 A at Tc = 80 C • • • • • Power m odule Single switch Including fast free-wheel diodes Package with insulated m etal base plate Package outlines/C ircuit diagram : 4”


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    PDF C67076-A2001-A2 SII00254 PSL-80 siemens igbt BSM 200 GA 120

    BSM200GA160D

    Abstract: Ga-160
    Text: SIEMENS IGBT Module BSM200 GA160 D 200ga16a doc VCE= 1600 V 'c = 275 A at Te =25°C le = 200 A at Tc =80°C • Power module • Single switch • Including fast free-wheel diodes • Package with insulated metal base plate Single switch Type Type Ordering code


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    PDF 200ga16a GA160D C67076-A2114-A2 2001trg a23SbGS 023SbGS AM119271 00b0552 BSM200GA160D Ga-160