induction cooker circuit diagram
Abstract: control circuit of induction cooker diagram induction cooker induction heat circuit induction cooker coil design igbt induction cooker induction cooker circuit induction cooker heat sensor bosch induction cooker circuit diagram induction cooker circuit with IGBT
Text: Direct Link 1116 Applications & Cases Components for induction cookers April 2008 Energy efficiency in the kitchen Induction cookers are extremely energy efficient. EPCOS supplies a full range of components, including film capacitors, chokes, transformers,
|
Original
|
|
PDF
|
20N120BD1
Abstract: ixys dsep 8-12a
Text: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
20N120B
20N120BD1
IC110
O-220
728B1
123B1
065B1
20N120BD1
ixys dsep 8-12a
|
PDF
|
epcos
Abstract: induction cooker application notes B32669 siemens b78311 pa66-gf30 b57524k siemens B32335 B57895 siemens induction cooker Siemens capacitor B32335
Text: Application Guide 2008 Consumer Electronic Components for H o m e A p p l i a n c e s www.epcos.com Welcome to the World of Electronic Components and Modules EPCOS is a leading manufacturer of electronic components, modules and systems. Our broad portfolio includes capacitors, inductors and ferrites, EMC filters, sensors
|
Original
|
|
PDF
|
igbt induction cooker
Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
|
Original
|
28N120B
IC110
O-268
O-247
728B1
123B1
728B1
065B1
28N120B
igbt induction cooker
induction cooker application notes
siemens igbt
IXGH 28N120B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient
|
Original
|
20N120B
O-268
O-247
728B1
123B1
065B1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings
|
Original
|
20N120B
IC110
O-268
O-247
728B1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings
|
Original
|
20N120B
O-268
IC110
728B1
123B1
728B1
065B1
20N120B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
|
Original
|
28N120B
IC110
O-268
O-247
728B1
123B1
065B1
|
PDF
|
igbt for induction heating ic
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage IGBT Designed for inductive heating applications IXGQ 20N120B VCES IXGP 20N120B IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V
|
Original
|
20N120B
IC110
O-220
20N120B
igbt for induction heating ic
|
PDF
|
28N120B
Abstract: RG201
Text: Advanced Technical Data High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous
|
Original
|
28N120B
O-268
O-247
728B1
123B1
065B1
RG201
|
PDF
|
28N120
Abstract: igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056
Text: High Voltage IGBT IXGP 28N120B VCES = 1200 V = 50 A IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
|
Original
|
28N120B
IC110
O-220
28N120B
28N120
igbt induction cooker
Siemens induction cooker
IXGP28N120B
igbt for induction heating ic
induction cooker
induction cooker application notes
induction heating ic
28N12
C27056
|
PDF
|
igbt for induction heating
Abstract: 15v140
Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings
|
Original
|
20N120B
O-268
IC110
O-247
728B1
123B1
728B1
065B1
20N120B
igbt for induction heating
15v140
|
PDF
|
20n120
Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
20N120B
20N120BD1
IC110
O-220
6A/DSEC16-06A
20n120
induction heating cooker
igbt induction cooker
siemens igbt 20A
20N120BD1
induction cooker application notes
|
PDF
|
igbt induction cooker
Abstract: No abstract text available
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
28N120BD1
IC110
O-268
0-12A/DSEC
0-12A
igbt induction cooker
|
PDF
|
|
IXGH20N120BD1
Abstract: IXGH 20N120BD1
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
20N120BD1
20N120BD1
IC110
O-247AD
O-268
O-247)
Fea140
IXGH20N120BD1
IXGH 20N120BD1
|
PDF
|
28N120
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
|
Original
|
28N120B
IC110
O-268
O-247
28N120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
|
Original
|
28N120B
IC110
O-268
O-247
|
PDF
|
IXGH 28N120BD1
Abstract: No abstract text available
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
28N120BD1
28N120BD1
IC110
O-247AD
O-268
O-247)
Fea140
IXGH 28N120BD1
|
PDF
|
igbt induction cooker
Abstract: induction heating cooker IXGH20N120BD1
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
20N120BD1
IC110
O-268
0-12A/DSEC
0-12A
igbt induction cooker
induction heating cooker
IXGH20N120BD1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
20N120BD1
IC110
O-268
0-12A/DSEC
0-12A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
|
Original
|
28N120BD1
28N120BD1
IC110
O-247AD
O-268
O-247)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES
|
Original
|
20N120BD1
20N120BD1
O-247AD
O-268
O-247AD/TO-268
|
PDF
|
IXGH 28N120BD1
Abstract: igbt induction cooker 28N120
Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES
|
Original
|
28N120BD1
IXGH 28N120BD1
igbt induction cooker
28N120
|
PDF
|
IXGQ28N120B
Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous
|
Original
|
28N120B
28N120BD1
IC110
065B1
728B1
123B1
728B1
IXGQ28N120B
28N120
induction cooker application notes
IXGQ28N120BD1
|
PDF
|