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    SIGE PNP TRANSISTOR Search Results

    SIGE PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    SIGE PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    germanium transistors PNP

    Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
    Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,


    Original     		IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR PDF

    1 kilo ohm resistor specifications

    Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
    Text: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •


    Original     		AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM PDF

    BFP640

    Abstract: SiGe PNP transistor Miteq RF LNA 3.1 to 10.6 GHz Application Note 21 k 151 transistor FSEB30 unconditionally stable transistor high gain 2.4 ghz SiGe PNP
    Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 1 L o w N o i s e A m p l i fi e r L N A f o r 2 . 3 - 2 . 5 G H z A p pl i c a t i o n s U s i n g t h e S i G e B F P 6 4 0 T r a ns i s t o r R F & P r o t e c ti o n D e v i c e s


    Original     		BFP640 SiGe PNP transistor Miteq RF LNA 3.1 to 10.6 GHz Application Note 21 k 151 transistor FSEB30 unconditionally stable transistor high gain 2.4 ghz SiGe PNP PDF

    stacked transistors SOI RF

    Abstract: TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ
    Text: A Complementary Bipolar Technology on SOI Featuring 50GHz NPN and 35GHz PNP Devices for High Performance RF Applications S. Nigrin, M. C. Wilson, S. Thomas, S. Connor and P. H. Osborne Zarlink Semiconductor, Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


    Original     		50GHz 35GHz stacked transistors SOI RF TRANSISTOR PNP 5GHz SiGe PNP transistor 5GHz PNP transistor gummel transistor 5ghz pnp complementary npn-pnp RF Bipolar Transistor SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar HJ PDF

    PA2423

    Abstract: SiGe PNP PA2423L SIGE SEMICONDUCTOR SiGe PNP transistor
    Text: Application Note 13-APP-03 Maximizing Output Power using Reduced Control Voltage Introduction Several commercially available baseband processors use a power output control that is a voltage source, capable of providing up to a maximum of 2.4V. The power control of SiGe Semiconductor’s PA2423L varies from 0 to 3.3V and


    Original     		13-APP-03 PA2423L PA2423 13-APP-03 SiGe PNP SIGE SEMICONDUCTOR SiGe PNP transistor PDF

    radar 77 ghz sige

    Abstract: SiGe PNP transistor automotive radar ghz cmos atmel 006 germanium transistors NPN zener 12v germanium
    Text: S I L I C O N Atmel , a global supplier of advanced semiconductors, operates several wafer manufacturing facilities using leading-edge technologies. The extensive manufacturing is also made available to customers who want to access silicon foundry for their products.


    Original     		4603B-SiGe-02/03/10M radar 77 ghz sige SiGe PNP transistor automotive radar ghz cmos atmel 006 germanium transistors NPN zener 12v germanium PDF

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 PDF

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


    Original     		B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz PDF

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR PDF

    SOT343R

    Abstract: SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR
    Text: Semiconductors Philips RF wideband transistors and MMICs for wireless RF Wideband Transistors RF Wideband Transistors Type fT Vceo GHz (V) SOT23, NPN PMBHT10 PBR941 PBR951 SOT23, PNP PMBTH81 BFG310/XR BFG325/XR SOT323, NPN BFS17W PRF547 PRF957 SOT323, PNP


    Original     		PMBHT10 PBR941 PBR951 PMBTH81 BFG310/XR BFG325/XR OT323, BFS17W PRF547 PRF957 SOT343R SC 2272 IC vco 900 1800 mhz "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2709 PBR951 BGA2771 BFG310W/XR PDF

    "vlsi technology" abstract for

    Abstract: TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR
    Text: A New Complementary Bipolar Process featuring a Very High Speed PNP. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas and A J Manson. Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K. Abstract This paper introduces "Process HJ" a


    Original     		20GHz 30GHz, "vlsi technology" abstract for TRANSISTOR 30GHZ "vlsi technology" abstract Bipolar HJ 30GHz transistor trench TEOS oxide layer complementary npn-pnp Schematics 5250 SiGe PNP transistor high gain PNP RF TRANSISTOR PDF

    TRANSISTOR 30GHZ

    Abstract: "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode
    Text: Process HJ: A 30 GHz NPN and 20 GHz PNP Complementary Bipolar Process for High Linearity RF Circuits. M C Wilson, P H Osborne, S Nigrin, S B Goody, J Green, S J Harrington, T Cook, S Thomas, A J Manson and A Madni Mitel Semiconductor Cheney Manor, Swindon, Wiltshire, SN2 2QW, U.K.


    Original     		30GHz 20GHz, TRANSISTOR 30GHZ "vlsi technology" abstract for Marconi Optical Components Bipolar HJ GEC Marconi Materials Technology Schematics 5250 30GHz transistor trench TEOS oxide layer INTERMETal diode PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    pnp-1500-p22

    Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
    Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product


    Original     		PDF

    64Mb-SRAM

    Abstract: TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F
    Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2001年10月号 1 各種携帯情報端末の小型・薄型化を実現 8Mb SRAM/32Mb擬似SRAM搭載MCP TH50WSP3580AASBTH50WSP3581AASB SRAM応用技術担当 045-890-2708 携帯電話をはじめとする携帯機器、情報


    Original     		SRAM/32MbSRAMMCP TH50WSP3580AASB TH50WSP3581AASB SRAM045-890-2708 SRAM32 175m32 SRAM/32MbSRAM 64Mb-SRAM TC51W6416XB-80 transistor SOT23 4d transistor wd sot-23 MT4S100U MT4S101U TC51W6417XB-80 NPN SOT-23 WF S2117 TC7SA126F PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor PDF

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01 PDF

    F9 SOT23

    Abstract: BFG425W IC vco 900 1800 mhz BGA2022 2.45 Ghz power amplifier sot343r BFG480W BFG410W PBR951 PMBTH10
    Text: P H I L I P S R F W I D E B A N D T R A N S I S TO R S A N D M M I C S F O R W I R E L E S S Preferred types recommended for new design. Fo r a c o m p l e t e ove r v i ew o f o u r p o r t f o l i o s e e o u r w e b s i t e w w w. s e m i c o n d u c t o r s . p h i l i p s . c o m / p ro d u c t s / r f /


    Original     		PMBTH10 PMBTH81 BFS17W BFR92AT BFT92W BFR93AT PBR941 PBR951 PRF947 PRF949 F9 SOT23 BFG425W IC vco 900 1800 mhz BGA2022 2.45 Ghz power amplifier sot343r BFG480W BFG410W PBR951 PMBTH10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICREL FOUNDRY SERVICES: S I L I C O N M A D E I N S I L I C O N VA L L E Y Micrel Inc., is a leading global manufacturer of IC solutions for the worldwide high-performance linear and power solutions, LAN, and timing and communications markets. Micrel’s custom foundry service is the alternative to traditional foundry services, allowing customers to develop their


    Original     		MICFOUND-060514 PDF

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G PDF

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters PDF

    mobile nokia circuit diagram

    Abstract: toshiba Bluetooth Module block diagram bluetooth headset 2.4GHz Cordless Phone circuit diagram nokia mobile phone logical circuit diagram bluetooth Keyboard Mouse circuit diagram for wireless headsets atmel bluetooth Bluetooth IC multimedia One-chip telephone IC
    Text: Multimedia & Communications BLUETOOTH ATMEL OFFERS A COMPLETE SOLUTION IN A HIGHLY INTEGRATED MODULE A Joint Development by Atmel’s TEMIC and Multimedia & Communications Atmel is SLI Company Proprietary D:FrontDesk/Presentation/Products & Cap/0499bluetooth


    Original     		Cap/0499bluetooth mobile nokia circuit diagram toshiba Bluetooth Module block diagram bluetooth headset 2.4GHz Cordless Phone circuit diagram nokia mobile phone logical circuit diagram bluetooth Keyboard Mouse circuit diagram for wireless headsets atmel bluetooth Bluetooth IC multimedia One-chip telephone IC PDF