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    SIGNETICS* FUSING PROCEDURE 185 Search Results

    SIGNETICS* FUSING PROCEDURE 185 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation

    SIGNETICS* FUSING PROCEDURE 185 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    signetics PROM

    Abstract: 82HS321A 82HS321B Signetics MUX
    Text: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The


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    PDF 82HS321A/82HS321B 32K-Bit 82HS321 signetics PROM 82HS321A 82HS321B Signetics MUX

    82s291a

    Abstract: No abstract text available
    Text: Signetics 82S291A 16K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification APPLICATIONS DESCRIPTION FEATURES The 82S291A is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The


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    PDF 82S291A 16K-Bit 82S291A

    82S2708

    Abstract: SIGNETICS 82S2708 CD0124SS Signetics Generic I fusing procedure 64X128 bipolar PROM Signetics MUX
    Text: 82S2708 Signetics 8K-Bit nL Bipolar PROM P rod uct Specification Military Bipolar Memory Products DESCRIPTION FEATURES T h e 8 2 S 2 7 0 8 is field-program m able, which m eans that custom patterns are im mediately available by following the Signetics Generic I fusing procedure.


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    PDF 82S2708 82S2708 470S2, WF14010S 500ns SIGNETICS 82S2708 CD0124SS Signetics Generic I fusing procedure 64X128 bipolar PROM Signetics MUX

    82HS641B

    Abstract: 82HS641A 82HS641 "Bipolar PROM"
    Text: 82HS641A 82HS641B Signetics 64K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION Th e 82H S 641 is field program m able which m eans that custom patterns are im­ m ediately available by following the Sig­ netics G eneric II fusing Procedure. The


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    PDF 82HS641A 82HS641B 64K-Bit 82HS641A 82HS641A/82HS641B 82HS641B 82HS641 "Bipolar PROM"

    N82S123F

    Abstract: N82S123N N82S23F 82S123 programming N82S23N 82S123 SIGNETICS prom signetics 82S123 n82s123 82S23
    Text: Signetics Mem ories - Bipolar Prom s Programming Signetics P R O M S CONNECTION DIAGRAM PROM programming is available through ITT Gemini for further details please contact your local sales office. N82S23/N82S123 PROM 256 Bit Bipolar GENERAL DESCRIPTION The 82S23 and 82S123 are field programmable, which


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    PDF N82S23/N82S123 82S23 82S123 N82S123F N82S123N N82S23F 82S123 programming N82S23N SIGNETICS prom signetics 82S123 n82s123

    N82S185f

    Abstract: 82S185 SIGNETICS 82S185 82S184 N82S184F N82S185
    Text: Signetics Memories - Bipolar Proms N82S184,N82S185 - 8192 Bit Field C0NNECTI0N DIAGRAM Programmable Bipolar Prom G E N E R A L D E S C R IP T IO N T he 8 2 S 1 8 4 and 8 2 S 1 8 5 are field programmable, w hich means that custom patterns are im mediately available by


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    PDF N82S184 N82S185 82S184 82S185 N82S185f 82S185 SIGNETICS N82S184F

    N82S181

    Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 N82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330

    82S181A

    Abstract: No abstract text available
    Text: 82S181A Signetics 8K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS T h e 8 2S 1 8 1 A is field-program m able, which m eans that custom patterns are • Address access time: 55ns max • Prototyping/volume production


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    PDF 82S181A 82S181A

    82s185

    Abstract: No abstract text available
    Text: 8 2 S 1 8 5 /1 8 5 A /1 8 5 B S ig n e tic s 8K-Bit TTL Bipolar PROM 2048 x 4 Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S185 is field-programm able, which means that custom patterns are immediately available by following the


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    PDF 82S185 82S185/185A/185B 270ft,

    Signetics 82S191

    Abstract: 82S191 82S191A signetics generic procedure
    Text: Signetics 82S191, 82S191A Military Bipolar Memory Products Product Specification 16K-Bit TTL Bipolar PROM DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing


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    PDF 82S191, 82S191A 82S19 100ns 82S191A: 16K-Bit 82S191 82S191A Signetics 82S191 signetics generic procedure

    TAA 785 A IC

    Abstract: IC TTL 4700 82S181 Signetics 82s181 0/TAA 785 A IC
    Text: Signetics 82S181 8K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The 82S181 is supplied with all outputs at a


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    PDF 82S181 82S181 TAA 785 A IC IC TTL 4700 Signetics 82s181 0/TAA 785 A IC

    M 82S181

    Abstract: 82S180 82S181 N82S181 S82S181
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.


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    PDF 8192-BIT 1024x8) 82S180 /82S181 82S180 82S181 M 82S181 N82S181 S82S181

    25CC

    Abstract: 82S183 N82S183 S82S183 8192-BIT
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 X 8 82S183 (T.S.) ABSOLUTE MAXIMUM RATINGS PARAMETER Vcc VIN ta Ts t g Supply voltage Input voltage Temperature range Operating N82S183 S82S183 Storage RATING UNIT +7 + 5 .5 Vdc V dc °C 0 to + 7 5


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    PDF 8192-BIT 1024x8) N82S183 S82S183 N82S183: S82S183: N82S183 S82S183 -18mA 25CC 82S183

    82S183

    Abstract: 25CC N82S183 S82S183
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 82S183 T.S. 8192-BIT BIPOLAR PROM (1 0 2 4 x 8 ) DESCRIPTION The 82S 183 is field program m able, w hich means th a t custom patte rn s are im m ediately available by follow ing th e fusing procedure given in th is data m anual. The sta n d ard


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    PDF 8192-BIT 1024x8) 82S183 82S183 25CC N82S183 S82S183

    N82S181F

    Abstract: 82LS181 82S180 82S181 S82S181
    Text: JANUARY 1983 BIPOLAR MEMORY DIVISION 82S180 O.C.J/82S181 (T.S. 8192-BIT BIPOLAR PROM (1 0 2 4 x 8 ) PIN CONFIGURATION DESCRIPTION FEATURES The 82S180 and 82S181 are fie ld program m able, w hich means th a t cu sto m patte rn s are im m ed iate ly available by


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    PDF 8192-BIT 1024x8) 82S180 J/82S181 82S180 82S181 N82S181F 82LS181 S82S181

    82S123 programming

    Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
    Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO


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    PDF N82S23 N82S123 N82S126 N82S1-29 N82S27 N82S130 N82S131 N82S114 N82S115 82S123 programming PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608

    SIGNETICS prom

    Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
    Text: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO


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    PDF N82S23 N82S123 N82S126 N82S1-29 N82S27 N82S130 N82S131 N82S114 SIGNETICS prom 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom

    82s185

    Abstract: No abstract text available
    Text: FEATURES • Low power dissipation: 50/xW/bit typ • Address access time: N82S184/185: 100ns max S82S184/185: 150ns max • Input loading: N82S184/185: -1 0 0 MA max S82S184/185: -150/xA max • On-chip address decoding • Output options: 82S184: Open collector


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    PDF 82S184 82S185

    Untitled

    Abstract: No abstract text available
    Text: JANUARY 1983 BIPOLAR MEMORY DIVISION 4096-BIT BIPOLAR PROM 5 1 2 x 8 82S140 (O .C.)/82S 14i (T.S.) DESCRIPTION FEATURES The 82S140 and 82S141 are fie ld p rogram ­ m able, w hich m eans th a t cu sto m p atterns are im m ed iate ly available by fo llo w in g the


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    PDF 4096-BIT 82S140 82S140 82S141 N82S140/141 S82S140/141

    programmable state machine

    Abstract: ck-ck ELEVATOR LOGIC CONTROL
    Text: Signetics PLS168 Field Programmable Logic Sequencer 12 x 48 x 8 Signetics Programmable Logic Military Customer Specific Products DESCRIPTION The PLS168 is a bipolar, programmable state machine of the Mealy type. It con­ tains logic AND-OR gate arrays with user


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    PDF PLS168 PLS168 programmable state machine ck-ck ELEVATOR LOGIC CONTROL

    Untitled

    Abstract: No abstract text available
    Text: Signetics PLS168 Field Programmable Logic Sequencer 12x48x8 Signetics Programmable Logic Military Customer Specific Products DESCRIPTION The P L S 168 is a bipolar, prog ra m m a ble sta te m a chin e o t th e M ealy typ e . It c o n ­ ta ins logic A N D -O R g ate arrays w ith user


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    PDF PLS168 12x48x8)

    PLS105

    Abstract: signetics 82S QP 82S
    Text: Signetics 82S105 PLS105 Field-Programmable Logic Sequencer (16 x 48 x 8) Military Application Specific Products DESCRIPTION The 82S105 is a bipolar programm able state machine of the M ealy type. It co n ­ tains logic A N D -O R gate arrays with user programm able connections which control


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    PDF 82S105 PLS105) 82S105 PLS105 signetics 82S QP 82S

    Untitled

    Abstract: No abstract text available
    Text: Signetics I PLS167 I Field-Programmable Logic Sequencer I 14x48x6 Military Customer Specific Products Product Specification DESCRIPTION th e Low to H igh tra n sitio n of th e C lo c k T h e P L S 1 6 7 is a bipolar, p ro g ra m m a b le s ta te m a c h in e of th e M e a ly ty p e . T h e


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    PDF PLS167 14x48x6)

    82S105

    Abstract: 82S105 T.S 16X48X8
    Text: 8 2 S 1 0 5 P L S 1 0 5 Field-Programmable Logic S ig n e tic s Sequencer (16x48x8) Military Application Specific Products DESCRIPTION The 82S105 is a bipolar programmable stale machine of the Mealy type. It con­ tains logic AND-OR gate arrays with user


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    PDF 16x48x8) 82S105 82S105 T.S 16X48X8