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    SILICON BIPOLAR TRANSISTOR LOW NOISE AMPLIFIER Search Results

    SILICON BIPOLAR TRANSISTOR LOW NOISE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC156R0G3D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFM31PC276D0E3L Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    NFMJMPL226R0G5D Murata Manufacturing Co Ltd Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose Visit Murata Manufacturing Co Ltd
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SILICON BIPOLAR TRANSISTOR LOW NOISE AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


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    MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335 PDF

    IC 8088

    Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
    Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well


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    ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500 PDF

    mount chip transistor 332

    Abstract: SOT-23 TRANSISTOR 548 MA4T64500
    Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


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    MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500 PDF

    transistor D 2394

    Abstract: No abstract text available
    Text: Agilent AT-41411 Surface Mount Low Noise Silicon Bipolar Transistor Chip Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz Description The AT-41411 bipolar transistor is fabricated using Agilent’s 10 GHz fT Self-Aligned-Transistor SAT


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    AT-41411 OT-143 5965-0276E 5989-2646EN transistor D 2394 PDF

    AT-41435G

    Abstract: at41435 AT41435G transistor 2499
    Text: Agilent AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz Description Agilent’s AT-41435 is a general purpose NPN bipolar transistor that offers excellent high


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    AT-41435 5988-9279EN 5989-2647EN AT-41435G at41435 AT41435G transistor 2499 PDF

    agilent at41486

    Abstract: AT-41486-TR1G AT-41486 nfO32 AT41486-TR1
    Text: Agilent AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz Agilent’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The


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    AT-41486 5968-2031E 5989-2648EN agilent at41486 AT-41486-TR1G nfO32 AT41486-TR1 PDF

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


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    AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features • Low Phase Noise Oscillator Transistor • 200 mW Driver Amplifier Transistor • Operation to 8 GHz • Available as Chip • Available in Hermetic Surface Mount Packages


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    MP4T243 MP4T24300 MP4T24335 PDF

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


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    AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR106 Low Noise Silicon Bipolar RF Transistor • High linearity low noise RF transistor • 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA • For UHF / VHF applications • Driver for multistage amplifiers • For linear broadband and antenna amplifiers


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    BFR106 AEC-Q101 PDF

    transistor L44

    Abstract: L44 TRANSISTOR MA4T645
    Text: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified


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    ML4T645-S-512 ML4T645 transistor L44 L44 TRANSISTOR MA4T645 PDF

    MP4T243

    Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages


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    MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave PDF

    spice gummel

    Abstract: No abstract text available
    Text: BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V HBM • High fT of 22 GHz


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    BFR460L3 AEC-Q101 spice gummel PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP460 Low Noise Silicon Bipolar RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500 V HBM 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point


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    BFP460 AEC-Q101 OT343 PDF

    transistor BC 245

    Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136
    Text: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the


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    PDF

    QE R 643

    Abstract: No abstract text available
    Text: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip


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    MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643 PDF

    transistor c 5936 circuit diagram

    Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a


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    AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E transistor c 5936 circuit diagram c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages


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    MA4T243 MA4T24300 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free thin small


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    BFR360L3 AEC-Q101 PDF

    c380 NPN transistor

    Abstract: c380 npn HSC5094 FC 0137 transistor marking code ne SOT-23 rbm 5018 4.7-16 4447 surface mounted diode c380 transistor TR10E
    Text: HI-SINCERITY Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2002.10.25 Page No. : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band.


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    HN200103 HSC5094 HSC5094 OT-23 c380 NPN transistor c380 npn FC 0137 transistor marking code ne SOT-23 rbm 5018 4.7-16 4447 surface mounted diode c380 transistor TR10E PDF

    c380 NPN transistor

    Abstract: c380 transistor TR10E NPN C380 transistor c380 TT 2076 transistor transistor T C380 c380 npn c 4977 transistor diode gp 934
    Text: HI-SINCERITY Spec. No. : HN200103 Issued Date : 1999.08.01 Revised Date : 2003.10.30 Page No. : 1/7 MICROELECTRONICS CORP. HSC5094 NPN SILICON BIPOLAR TRANSISTOR Description The HSC5094 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band.


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    HN200103 HSC5094 HSC5094 OT-23 c380 NPN transistor c380 transistor TR10E NPN C380 transistor c380 TT 2076 transistor transistor T C380 c380 npn c 4977 transistor diode gp 934 PDF

    transistor L44

    Abstract: MA4T64535
    Text: Afa Preliminary Specification an A M P c o m p a n y High Reliability Semiconductor Silicon Bipolar Low Noise Transistor ML4T645-S-512 V1.00 ODS 512 Outline Features • • • • fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation


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    ML4T645-S-512 ML4T645 transistor L44 MA4T64535 PDF

    transistor 4500

    Abstract: MP4T6825 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j
    Text: Low Current 8 Volt, Low Noise High fT Silicon Transistor Features • • • • • • MP4T6825 Series SOT-23 Low Current Operation High fT 8 GHz Low Noise Figure with 1-5 mA Current Low Phase Noise Inexpensive Available on Tape and Reel Description The MP4T6825 series of low current silicon bipolar


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    MP4T6825 OT-23 OT-143 MP4T682539 transistor 4500 MP4T682500 MP4T682533 MP4T682535 MP4T682539 S21E S22E transistor r 606 j PDF

    8054 transistor

    Abstract: TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 AT-41500
    Text: AT-41500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Data Sheet Description/Applications Features The AT-41500 of Avago Techologies is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter


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    AT-41500 AT-41500 AT-41500-GP4 045mm AV01-0438EN AV02-1844EN 8054 transistor TRANSISTOR 4847 TRANSISTOR c 5803 s415 RF AT-41586 chip die npn transistor at41500 PDF