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    SILICON CARBIDE POWER MOSFET Search Results

    SILICON CARBIDE POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    SILICON CARBIDE POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60 PDF

    Solar Inverters

    Abstract: No abstract text available
    Text: 10-PZ12B2A040ME01-M330L63Y flow SOL0-SiC 1200 V / 40 mΩ Features TM ● Cree flow 0 12mm housing Silicon Carbide Power MOSFET TM ● Cree Silicon Carbide Power Schottky Diode ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		10-PZ12B2A040ME01-M330L63Y Solar Inverters PDF

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ12NMA027ME-M340F63Y flow MNPC 0-SIC 1200V/ 80mΩ Features flow 0 12mm housing ● Cree Silicon Carbide Power MOSFET ● Cree™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		10-PZ12NMA027ME-M340F63Y PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors


    Original     		10-PZ12NMA027MR-M340F68Y PDF

    MSK4105

    Abstract: No abstract text available
    Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 FEATURES: Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C


    Original     		MIL-PRF-38534 00V/10A MIL-PRF-38534 MSK4105 MIL-PRF-38534, PDF

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
    Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output


    Original     		RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0 PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		STPSC1206 PDF

    STPSC1206D

    Abstract: STPSC1206 16288
    Text: STPSC1206 600 V power Schottky silicon carbide diode Features • No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description A K These diodes are manufactured using silicon carbide substrate. This wide bandgap material


    Original     		STPSC1206 STPSC1206D STPSC1206 16288 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description


    Original     		IJW120R100T1 PDF

    IJW120R070T1

    Abstract: IJW120R silicon carbide
    Text: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description


    Original     		IJW120R070T1 IJW120R070T1 IJW120R silicon carbide PDF

    10KV SiC

    Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
    Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA [email protected] Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA


    Original     		PDF

    power Diode 800V 20A

    Abstract: SHD619502 MOSFET 20a 800v MOSFET 800V 10A
    Text: SENSITRON _ SEMICONDUCTOR SHD619502 DATASHEET 5342, REV - 1200V, 35A Silicon Carbide Power MOSFET Surface mount hermetic package Low Rdson over full temperature range Low switching losses Maximum Ratings PARAMETER Continuous Drain Current SYMBOL Vgs = 20V, Tc=25 C


    Original     		SHD619502 power Diode 800V 20A SHD619502 MOSFET 20a 800v MOSFET 800V 10A PDF

    MOSFET 20a 800v

    Abstract: MOSFET 800V 10A SHD626502 power Diode 800V 20A
    Text: SENSITRON _ SEMICONDUCTOR SHD626502 DATASHEET 5343, REV - 1200V, 31A Silicon Carbide Power MOSFET Through-hole hermetic package Low Rdson over full temperature range Low switching losses Maximum Ratings PARAMETER Continuous Drain Current SYMBOL Vgs = 20V, Tc=25 C


    Original     		SHD626502 O-257 MOSFET 20a 800v MOSFET 800V 10A SHD626502 power Diode 800V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40SM120J APT40SM120J 1200V, 32A, 80mΩ Silicon Carbide Power MOSFET FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS on • Buck converter SO • Short Circuit Withstand Rated • Flyback


    Original     		APT40SM120J E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product Marketing Manager, Vincotech GmbH This article compares and contrasts two types of modules, one with silicon switches and the other with SiC silicon carbide switches. Vincotech flowMNPC 0 modules in 12mm


    Original     		30-kW 30-kW, SJEP120R100, PDF

    Untitled

    Abstract: No abstract text available
    Text: APT50SM120J APT50SM120J 1200V, 37A, 50mΩ Silicon Carbide Power MOSFET S S FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For


    Original     		APT50SM120J E145592 PDF

    microsemi

    Abstract: No abstract text available
    Text: APT50SM120B_S APT50SM120B APT50SM120S 1200V, 50A, 50mΩ Silicon Carbide Power MOSFET TO -24 FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For


    Original     		APT50SM120B APT50SM120S microsemi PDF

    Silicon Carbide Power MOSFET

    Abstract: microsemi
    Text: APT40SM120B_S APT40SM120B APT40SM120S 1200V, 40A, 80mΩ Silicon Carbide Power MOSFET TO -24 FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI/RFI • PFC and other boost converter • Low Switching Energy • Buck converter • Low RDS on Temperature Coefficient For


    Original     		APT40SM120B APT40SM120S 25user Silicon Carbide Power MOSFET microsemi PDF

    Untitled

    Abstract: No abstract text available
    Text: SCT30N120 Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package Datasheet - preliminary data Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature • Very high operating temperature capability


    Original     		SCT30N120 HiP247â DocID023109 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS on


    Original     		MYXMN1200-40CAB PDF

    MYXMN1200-20CAB

    Abstract: silicon carbide AT/1200 volt mosfet
    Text: Silicon Carbide Power MOSFET 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS on


    Original     		MYXMN1200-20CAB MYXMN1200-20CAB silicon carbide AT/1200 volt mosfet PDF

    SCT30n120

    Abstract: No abstract text available
    Text: SCT30N120 Silicon carbide Power MOSFET: 45 A, 1200 V, 80 mΩ, N-channel in HiP247 package Datasheet - preliminary data Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature • Very high operating temperature capability


    Original     		SCT30N120 HiP247â DocID023109 SCT30n120 PDF

    MYXMN0600-20DA0

    Abstract: silicon carbide smd code diode 20a
    Text: Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 600V isolation in a small package outline • High blocking voltage with low RDS on


    Original     		MYXMN0600-20DA0 210OC MYXMN0600-20DA0 silicon carbide smd code diode 20a PDF