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    SILICON DIODE 4004 Search Results

    SILICON DIODE 4004 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    SILICON DIODE 4004 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4004G DIODE GLASS PASSIVATED SILICON RECTIFIER „ 1 DESCRIPTION The UTC 1N4004G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.


    Original     		PDF 1N4004G 1N4004G DO-41 1N4004GL-Z41-B 1N4004GP-Z41-B 1N4004GL-Z41-R 1N4004GP-Z41-R

    VSO05561

    Abstract: No abstract text available
    Text: BAS 40W. Silicon Schottky Diode 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40-04W BAS 40-05W BAS 40-06W 3 3 3 1 2 1 2 EHA07005 1 VSO05561 2 EHA07006 EHA07004


    Original     		PDF 0-04W 0-05W 0-06W VSO05561 EHA07005 EHA07006 EHA07004 OT-323 VSO05561

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount

    1N4007 sma

    Abstract: DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC 1N4001 1N4007 NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1N4007 sma DIODE 4004 4004 diode 1N4001 SMA SURFACE MOUNT SILICON RECTIFIER surface mount 1n4007 1N4007 DO-214AC NRD4007

    surface mount 1n4007

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007

    diode 4007 details

    Abstract: 1N4007 SURFACE MOUNT Diode ttr
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p diode 4007 details 1N4007 SURFACE MOUNT Diode ttr

    1N4007 sma

    Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003

    DO-213AB 4007

    Abstract: 4007 diode do-213AB melf diodes color DO213-AB color band 4003 diode rectifier DO-213AB diode rectifier 4001 DIODE 4005 SM4001-SM4007 IN 4004 diodes
    Text: SM 4001.SM 4007 Type Polarity color band Repetitive peak reverse voltage Surge peak reverse voltage Maximum forward voltage Tj = 25 °C Maximum reverse recovery time IF = 1 A IF = - A IR = - A IRR = - A VRRM Surface mount diode Standard silicon rectifier


    Original     		PDF DO-213AB diagramme/21/sm4001 DO-213AB 4007 4007 diode do-213AB melf diodes color DO213-AB color band 4003 diode rectifier DO-213AB diode rectifier 4001 DIODE 4005 SM4001-SM4007 IN 4004 diodes

    SURFACE MOUNT SILICON RECTIFIER

    Abstract: DO-214AC, SMA 1N4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) SURFACE MOUNT SILICON RECTIFIER DO-214AC, SMA 1N4007

    1n4001 trr

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		PDF 1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr

    smd marking 3 pin 44s

    Abstract: 44s sot23 SOT-23 marking 45s DIODE ED 92 smd 3-pin marking ct Dual Common Anode 3-pin
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON SCHOTTKY DIODE 3 3 Pin Configuration Pin Configuration 1 = NC 2 = ANODE 3 = CATHODE 2 1 3 1 = ANODE


    Original     		PDF BAS40, BAS40- OT-23 C-120 smd marking 3 pin 44s 44s sot23 SOT-23 marking 45s DIODE ED 92 smd 3-pin marking ct Dual Common Anode 3-pin

    44S DIODE

    Abstract: Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720
    Text: BAS 40W Silicon Schottky Diode ● ● ● ● General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type Ordering Code tape and reel Pin Configuration 1 2 3 BAS 40-04W BAS 40-05W BAS 40-06W Q62702-A1065


    Original     		PDF 0-04W 0-05W 0-06W Q62702-A1065 Q62702-A1066 Q62702-A1067 OT-323 44S DIODE Q62702-A1066 marking 45s marking C1 MARKING 44s Q62702-A1065 Q62702-A1067 cu marking code diode DIODE BAS JS v Marking on semiconductor 720

    MARKING 720 SOT23

    Abstract: DIODE 4004 BAS 20 SOT23 4004 diode 44s sot23 DIODE 4005 720 SOT23 43s sot23 4004 top marking c2 sot23
    Text: BAS 40 . Silicon Schottky Diodes 3 • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing 2 1 BAS 40 BAS 40-04 BAS 40-05 1 3 1 2 EHA07002 BAS 40-06 3 3 3 VPS05161 1 2 EHA07005 1


    Original     		PDF EHA07002 VPS05161 EHA07005 EHA07006 EHA07004 OT-23 EHB00040 MARKING 720 SOT23 DIODE 4004 BAS 20 SOT23 4004 diode 44s sot23 DIODE 4005 720 SOT23 43s sot23 4004 top marking c2 sot23

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		PDF F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode

    H24A1

    Abstract: H24A2 ST2006 ST4004 J279 ST2038
    Text: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with


    OCR Scan     		PDF H24A1 H24A2 E51868 ST4004 ST2006 ST2D36 ST2037 ST2038 3T2039 J279

    DIODE S3V 43

    Abstract: DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08
    Text: H&D J> ITEL-EFUNKEN ELECTRONIC m ß^EOO^b PÜD7b7? IAL66 CNR 21 TTIUStFQflMKlIM electronic _ Creative Technologies Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor


    OCR Scan     		PDF 0806/IEC 0750/T1 0860/IEC voltage933 DIODE S3V 43 DIODE S3V 03 DIN 50014 DIN 50014 STANDARD electromedical S10ms CNR21 dioda DIODE S3V 50 DIODE S3V 08

    DIODE S3V 94

    Abstract: DIODE S3V 43 DIODE S3V 75 IAL66 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23
    Text: W ITEL-EFUNKEN ELECTRONIC ]> • IAL66 fi^EOO^b PGD7 b7 ? T - U h * 1 CNR 21 TTItUStFQflMKlIMelectronic CreativeTachnotogtes Optically Coupled Triac Driver Construction: Emitter: GaAs Infrared Emitting Diode Detector: Silicon Planar Triac Bi-directional Double thyristor


    OCR Scan     		PDF D007b7? IAL66 0806/IEC 0750/T1 0860/IEC 0007bfll -200-mA DIODE S3V 94 DIODE S3V 43 DIODE S3V 75 DIN 50014 S10ms DIN 50014 STANDARD S3V Diode 23

    4E921

    Abstract: 40188 ODS-120 ODS-186 40298 4E920 ODS-276 schottky selection guide 4e925 4E969
    Text: COM SEMICONDUCTOR M/A-COM SEMICONDUCTOR PRODUCTS OPERATION SILICON SCHOTTKY MIXER DIODE CHIP & BEAM LEAD SELECTION GUIDE PRODUCTS OPERATION 1 Frequency Band ODS-990 1 Single Beam Lead (#4232)* ODS-965{2) Single Beam Lead (#4232)* ODS-942 ODS-264 Anti-Parallel


    OCR Scan     		PDF ODS-990 ODS-965 ODS-942 ODS-264 ODS-905 ODS-906 4E402L-906 4E402M-906 4E402H-906 4E929 4E921 40188 ODS-120 ODS-186 40298 4E920 ODS-276 schottky selection guide 4e925 4E969

    diode rectifier 1n4001

    Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS


    OCR Scan     		PDF 1N4001 1N4007 EIA-RS-481) NRD4001 NRD4007) diode rectifier 1n4001 NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • C ircuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code Marking Package^ tape and reel


    OCR Scan     		PDF 0-04W 0-05W 0-06W 2702-A OT-323 EHD07168 EHD07169

    H24B2

    Abstract: No abstract text available
    Text: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package.


    OCR Scan     		PDF H24B1 H24B2 E51868 H24B2

    a2 marking

    Abstract: Q62702-A1066 Marking Code to on semiconductor 720
    Text: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065


    OCR Scan     		PDF Q62702-A1065 Q62702-A1066 Q62702-A1067 0-04W 0-05W 0-06W OT-323 EHD07I67 a2 marking Marking Code to on semiconductor 720

    Untitled

    Abstract: No abstract text available
    Text: SP EC I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME ERWO 2 - 0 > 60 SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DAT É DRAWN NAME APPROVED Fuji E lectric C a n te i — á jx CHECKED


    OCR Scan     		PDF 0257-R-0Q4a TD-220AC 20kHr

    XLS-10

    Abstract: No abstract text available
    Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc ICM Units Rge = 20 T oase = 25/60 °C Tease = 25/60 °C; tp = 1 ms V ges Ptot per IG B T , T oase = 25 °C T j, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1


    OCR Scan     		PDF