2SK1842
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Drain current Gate current Power dissipation Junction temperature
|
Original
|
PDF
|
2SK1842
2SK1842
|
J108
Abstract: J109 J110 Silicon Junction FETs J109 7
Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs
|
Original
|
PDF
|
|
CRS15
Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs
|
Original
|
PDF
|
|
Infrared-Sensor
Abstract: latest Infrared-Sensor 2SK2380 SC-89
Text: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.80) (0.80) Drain current Gate current Allowable power dissipation Channel temperature
|
Original
|
PDF
|
2SK2380
Infrared-Sensor
latest Infrared-Sensor
2SK2380
SC-89
|
2sk3585
Abstract: GV2 LE diode code GW 17 GV2 LE AND GV2 L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package High mutual conductance gm
|
Original
|
PDF
|
2002/95/EC)
2SK3585G
2sk3585
GV2 LE
diode code GW 17
GV2 LE AND GV2 L
|
2SK3372G
Abstract: GV2 LE AND GV2 L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package • High mutual conductance gm
|
Original
|
PDF
|
2002/95/EC)
2SK3372G
2SK3372G
GV2 LE AND GV2 L
|
pyroelectric sensor application notes
Abstract: Junction-FET pyro pyroelectric sensor 2SK2988 "Field Effect Transistor" JISC7030 SC-75
Text: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
|
Original
|
PDF
|
2SK2988
SC-75
pyroelectric sensor application notes
Junction-FET
pyro
pyroelectric sensor
2SK2988
"Field Effect Transistor"
JISC7030
SC-75
|
2SK3426G
Abstract: GV2 LE AND GV2 L
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3426G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package • High mutual conductance gm
|
Original
|
PDF
|
2002/95/EC)
2SK3426G
2SK3426G
GV2 LE AND GV2 L
|
2SK3585
Abstract: 2SK358
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package High mutual conductance gm
|
Original
|
PDF
|
2002/95/EC)
2SK3585G
2SK3585
2SK358
|
SJF00005BED
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
|
Original
|
PDF
|
2SK0123
2SK123)
SJF00005BED
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-channel junction FET (0.425) Unit: mm For low-frequency amplification For switching circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1
|
Original
|
PDF
|
2002/95/EC)
2SK0663
2SK663)
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372 Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Package ■ Features • Code SSSMini3-F1
|
Original
|
PDF
|
2002/95/EC)
2SK3372
|
2SK1860
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 0.40 –0.05 +0.02 2.1±0.1 0.12 –0.01 3 • Absolute Maximum Ratings Ta = 25°C (0.95)
|
Original
|
PDF
|
2SK1860
2SK1860
|
2SK1104
Abstract: 2SJ164 SC-72
Text: Silicon Junction FETs Small Signal 2SK1104 Silicon N-Channel Junction FET For switching Complementary to 2SJ164 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
|
Original
|
PDF
|
2SK1104
2SJ164
SC-72
2SK1104
2SJ164
SC-72
|
|
|
2sk3585
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3585G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package High mutual conductance gm
|
Original
|
PDF
|
2002/95/EC)
2SK3585G
2sk3585
|
Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Unit −40 V Gate-source voltage (Drain open) VGSO
|
Original
|
PDF
|
2SK1842
|
2SK3862
Abstract: diode code GW 17
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3862 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package Low noise voltage NV
|
Original
|
PDF
|
2002/95/EC)
2SK3862
2SK3862
diode code GW 17
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance • Low-noise characteristics • Code
|
Original
|
PDF
|
2002/95/EC)
2SK1103
2SJ0163
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3948G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package Low noise voltage NV
|
Original
|
PDF
|
2002/95/EC)
2SK3948G
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package Low noise voltage NV
|
Original
|
PDF
|
2002/95/EC)
2SK4206
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3372G Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone • Features ■ Package • High mutual conductance gm
|
Original
|
PDF
|
2002/95/EC)
2SK3372G
|
Junction-FET
Abstract: 2SJ164 2SK1104 SC-72
Text: Silicon Junction FETs Small Signal 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 unit: mm 3.0±0.2 4.0±0.2 • Features 15.6±0.5 ● Low ON-resistance ● Low-noise characteristics Ratings Unit Gate to Drain voltage VGDS
|
Original
|
PDF
|
2SJ164
2SK1104
SC-72
Junction-FET
2SJ164
2SK1104
SC-72
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel silicon junction field-effect transistor FEATURES BF545A; BF545B; BF545C QUICK REFERENCE DATA MIN. MAX. UNIT “ 30 V BF545A 2 6.5 mA DESCRIPTION BF545B N-channel symmetrical silicon junction FETs in a
|
OCR Scan
|
PDF
|
BF545A;
BF545B;
BF545C
BF545A
BF545B
BF545A)
|
Untitled
Abstract: No abstract text available
Text: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current
|
OCR Scan
|
PDF
|
2SK2751
O-236
SC-59
C7030,
|
