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    SILICON MOSFET 1000V Search Results

    SILICON MOSFET 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    SILICON MOSFET 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet 1200V

    Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V


    Original     		CMF20120D-Silicon CMF20120D O-247-3 CMF20120D mosfet 1200V cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET IXDI414 DMOS SiC JEDEC24 RB160M-60 PDF

    CMF20120D

    Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
    Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode


    Original     		CMF20120D-Silicon CMF20120D O-247-3 CMF20120D JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A PDF

    IRFPG40

    Abstract: No abstract text available
    Text: IRFPG40 Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFPG40 -55oC 150oC IRFPG40 PDF

    2sk2258

    Abstract: No abstract text available
    Text: 2SK2258-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators


    Original     		2SK2258-01 SC-65 2sk2258 PDF

    2SK1986-01

    Abstract: No abstract text available
    Text: 2SK1986-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		2SK1986-01 O-220AB SC-46 2SK1986-01 PDF

    2sk225

    Abstract: 2SK2258-01 SC-65 Silicon MOSFET 1000V
    Text: 2SK2258-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators


    Original     		2SK2258-01 SC-65 2sk225 2SK2258-01 SC-65 Silicon MOSFET 1000V PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1986-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-220AB Applications Switching regulators


    Original     		2SK1986-01 O-220AB SC-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2004-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof


    Original     		2SK2004-01L PDF

    100A 1000V mosfet

    Abstract: NT 101 2SK2004-01L Silicon MOSFET 1000V
    Text: 2SK2004-01L,S FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof


    Original     		2SK2004-01L 100A 1000V mosfet NT 101 Silicon MOSFET 1000V PDF

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S PDF

    AN-983

    Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


    Original     		AN-983 1000C, AN-983 AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840 PDF

    APT14M100B

    Abstract: ultra fast recovery diode 500V APT14M100S MIC4452 Microsemi MOSFET 1000V POWER MOSFET Rise Time 1000V NS
    Text: APT14M100B APT14M100S 1000V, 14A, 0.90Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT14M100B APT14M100S APT14M100B ultra fast recovery diode 500V APT14M100S MIC4452 Microsemi MOSFET 1000V POWER MOSFET Rise Time 1000V NS PDF

    APT6M100K

    Abstract: MIC4452 3a ultra fast diode
    Text: APT6M100K 1000V, 6A, 2.50Ω MAX N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT6M100K O-220 APT6M100K MIC4452 3a ultra fast diode PDF

    Untitled

    Abstract: No abstract text available
    Text: APT37M100B2 APT37M100L 1000V, 37A, 0.33Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT37M100B2 APT37M100L O-264 O-247 PDF

    APT31M100B2

    Abstract: APT31M100L MIC4452
    Text: APT31M100B2 APT31M100L 1000V, 31A, 0.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT31M100B2 APT31M100L O-264 O-247 APT31M100B2 APT31M100L MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT31M100B2 APT31M100L 1000V, 32A, 0.38Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT31M100B2 APT31M100L O-264 O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT14M100B APT14M100S 1000V, 14A, 0.88Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT14M100B APT14M100S PDF

    Untitled

    Abstract: No abstract text available
    Text: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT9M100B APT9M100S PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT8M100B APT8M100S swit138) PDF

    APT37M100L

    Abstract: APT37M100B2 MIC4452
    Text: APT37M100B2 APT37M100L 1000V, 37A, 0.33Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT37M100B2 APT37M100L O-264 O-247 APT37M100L APT37M100B2 MIC4452 PDF

    mosfet 1000v 9A

    Abstract: isl6260 APT18M100B APT18M100S MIC4452
    Text: APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT18M100B APT18M100S mosfet 1000v 9A isl6260 APT18M100B APT18M100S MIC4452 PDF

    APT8M100B

    Abstract: APT8M100S MIC4452 microsemi mosfet 1000V
    Text: APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT8M100B APT8M100S APT8M100B APT8M100S MIC4452 microsemi mosfet 1000V PDF

    APT6M100K

    Abstract: MIC4452
    Text: APT6M100K 1000V, 6A, 2.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure


    Original     		APT6M100K O-220 APT6M100K MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPG40 Semiconductor D ata S h eet Ju ly 1999 4.3A, 1000V, 3.500 Ohm, N-Channel Power MOSFET F ile N u m b er 2879.2 Features • 4.3A, 1000V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    OCR Scan     		IRFPG40 PDF