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    SILICON PLANAR EPITAXIAL TRANSISTORS Search Results

    SILICON PLANAR EPITAXIAL TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PLANAR EPITAXIAL TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n3866

    Abstract: 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


    Original     		PDF 2N3866; 2N4427 SC08a O-39/1 2n3866 2n4427 2N3866 application note 2N3866 class-a 2n3866 philips RF 2N3866 2N3866 metal data 2n3866 2N3866 application Transistor 2n4427

    2N4400 2N4401

    Abstract: 2n4401 2N4400 2N4402 2N4403
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N4400, 2N4401 2N4402, 2N4403 2N4400, 4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N4402, 4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching Applications


    Original     		PDF ISO/TS16949 2N4400, 2N4401 2N4402, 2N4403 2N4400/01 2N4402/03 C-120 2N4400 2N4401 2n4401 2N4400 2N4402 2N4403

    CTN639

    Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS


    Original     		PDF ISO/TS16949 O-237 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN639 CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638

    XN4313

    Abstract: No abstract text available
    Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2


    Original     		PDF XN04313 XN4313) UNR1213 UN1213) UNR1113 UN1113) SC-74 XN4313

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04608G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification (Tr1) For low frequency output amplification (Tr2) •


    Original     		PDF 2002/95/EC) XN04608G 2SD0601A 2SB0970

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XP01601 XP1601
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02


    Original     		PDF 2002/95/EC) XP01601 XP1601) 2SB0709A 2SB709A) 2SD0601A 2SD601A) 2SB0709A 2SB709A 2SD0601A 2SD601A XP01601 XP1601

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01601 (XP1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02


    Original     		PDF 2002/95/EC) XP01601 XP1601) 2SB0709A 2SB709A) 2SD0601A 2SD601A)

    UNR2115

    Abstract: UNR2215 XN04315G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04315G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits • Package • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) XN04315G UNR2115 UNR2215 XN04315G

    Untitled

    Abstract: No abstract text available
    Text: 2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA Dimensions in mm inches PNP SILICON PLANAR EPITAXIAL TRANSISTORS 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. FEATURES 0.48 (0.019) 0.41 (0.016) dia. • SILICON PLANAR EPITAXIAL PNP


    Original     		PDF 2N3502 2N3503 2N3504 2N3505 2N3503" 10/10m 200MHz 2N3503-JQR-B

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package CSA970 CSC2240 CSA 970 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CSC 2240 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Low Noise Audio Amplifier B EC


    Original     		PDF CSA970 CSC2240 C-120

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04A88G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification • Package  Features  Code Mini6-G3


    Original     		PDF 2002/95/EC) XN04A88G 2SD0601A UNR211S

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP043A4 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.03 0.12 -0.02 0.10 3 Parameter Symbol Collector-base voltage


    Original     		PDF 2002/95/EC) NP043A4 UNR32A4 UNR31A4

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04604G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For low frequency output amplification • Package  Code Mini6-G3  Pin Name


    Original     		PDF 2002/95/EC) XN04604G 2SD1328 2SB0970

    UP03397

    Abstract: UNR1154 UNR1211
    Text: Composite Transistors UP03397 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF UP03397 UNR1154 UNR1211 UP03397 UNR1154 UNR1211

    2N2484

    Abstract: No abstract text available
    Text: NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Compliance to RoHS.


    Original     		PDF 2N2484 2N2484

    Untitled

    Abstract: No abstract text available
    Text: PZT2222 PZT2222A _ J v _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a m icrom iniatureSM D package SOT-223 , prim arily intended for linear and switching applications. PNP complements are PZT2907/2907A.


    OCR Scan     		PDF PZT2222 PZT2222A OT-223) PZT2907/2907A.

    Untitled

    Abstract: No abstract text available
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


    OCR Scan     		PDF BC516 BC517 T0-92F 400mA 625mW 0430B 0650B 4300B 6500B 20MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.


    OCR Scan     		PDF 2N3905 2N3906 2N3905 2N3906 2N3903 2N3904 T0-92A 100MHz 100kHz 100juA

    PN2907A

    Abstract: PN2907
    Text: PN2907 PN2907A _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 package fo r general purpose applications. N-P-N complement is PN2222/A. QUICK REFERENCE D A T A PN2907 PN2907A


    OCR Scan     		PDF PN2907 PN2907A PN2222/A. PN2907A PN2907

    Untitled

    Abstract: No abstract text available
    Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF T0-92A MPS6516 MPS6519 MPS6519 MPS6516/7/8 MPS6516/7/8 100mA Boxfe477, 100kHz 10kHz

    MPS6531

    Abstract: 455gb MPS6532 MPS6534 MPS6535
    Text: MPS6531 MPS6532 ?HILIPS INTERNATIONAL 5bE J> 711Qö2b D042SGb 22T •¡RHIN SILICON PLANAR EPITAXIAL TRANSISTORS T-27-Z/ NPN silicon planar epitaxial small-signal transistors, each in a plastic TO-92 envelope. They are intended for amplifier applications.


    OCR Scan     		PDF MPS6531 MPS6532 455Gb T-27-Z/ MPS6534 MPS6535. 100mA; MPS6531 100mA MPS6532 MPS6535

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E T> • bbS3131 □□E6011 TE5 APX MPSAOb _J V _ MPSA06 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA


    OCR Scan     		PDF bbS3131 E6011 MPSA06 MPSA05

    MPS2222

    Abstract: MPS2222A
    Text: ft N AMER PHILIPS/DISCRETE - - i - - bbsaiai []Qi?3Qfei T MPS2222 MPS2222A 25E D T - 2 7 - / 5 * SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a plastic TO-92 envelope primarily intended for linear and switching applications.


    OCR Scan     		PDF MPS2222 MPS2222A MPS2907/2907A, MPS2222 100juA; OO1730Ã MPS2222A

    MPS3704

    Abstract: MPS3706 MPS3705
    Text: MPS3704 MPS3705 MPS3706 philips international 5bE D 711065b 0042406 4Ô4 • SILICON PLANAR EPITAXIAL TRANSISTORS PHIN T -Z 7 -Z / NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.


    OCR Scan     		PDF MPS3704 MPS3705 MPS3706 711065b MPS3704 100mA MPS3706