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    SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Search Results

    SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PNP EPITAXIAL PLANAR TRANSISTOR FM20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1667

    Abstract: 2SA1668 FM20 22SA1
    Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)


    Original     		2SA1667/1668 2SC4381/4382) 2SA1667 2SA1668 10max O220F) 2SA1667 2SA1668 FM20 22SA1 PDF

    2SA1668

    Abstract: 2SA1667 equivalent for 2sa1668 FM20
    Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min


    Original     		2SA1667/1668 2SC4381/4382) 10max 150min 200min 60min 20typ 60typ 2SA1668 2SA1667 equivalent for 2sa1668 FM20 PDF

    2SA1725

    Abstract: 2SC4511 FM20 DSA0016504
    Text: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C


    Original     		2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 DSA0016504 PDF

    2SB1259

    Abstract: 2SD2081 FM20 DSA0016505
    Text: 3 k Ω (1 0 0Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA –120min VCE=–4V, IC=–5A 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max


    Original     		2SB1259 2SD2081) 10max 120min 2000min 100typ 145typ O220F) 2SB1259 2SD2081 FM20 DSA0016505 PDF

    2SB1626

    Abstract: 2SD2495 FM20
    Text: 7 0 Ω E 2SB1626 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2495) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj 2SB1626 Unit VCB=–110V –100max µA 10.1±0.2 –100max µA –110min V hFE VCE=–4V, IC=–5A


    Original     		2SB1626 2SD2495) 100max 5000min 100typ 110typ 110min 2SB1626 2SD2495 FM20 PDF

    2SC4064

    Abstract: 2SA1567 FM20 VMA00
    Text: 2SA1567 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4064 A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz


    Original     		2SA1567 2SC4064) 100max 50min 35max 40typ 330typ O220F) 2SC4064 2SA1567 FM20 VMA00 PDF

    2SA1567

    Abstract: 2SC4064 FM20 DSA0016503
    Text: 2SA1567 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4064 A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz


    Original     		2SA1567 2SC4064) 50min 35max 40typ 330typ 100max O220F) 100x100x2 2SA1567 2SC4064 FM20 DSA0016503 PDF

    2SA1725

    Abstract: 2SC4511 FM20 2sa1725 transistor
    Text: 2SA1725 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4511 V 50min∗ VCE=–4V, IC=–2A IB –3 A VCE(sat) IC=–2A, IB=–0.2A –0.5max V PC 30(Tc=25°C) W fT VCE=–12V, IE=0.5A 20typ MHz 150 °C COB VCB=–10V, f=1MHz 150typ pF °C


    Original     		2SA1725 2SC4511) 10max 80min 50min 20typ 150typ 100ms 2SA1725 2SC4511 FM20 2sa1725 transistor PDF

    2SD2642

    Abstract: 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686
    Text: 7 0 Ω E 2SB1686 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2642) V ICBO VCEO –110 V IEBO VEBO –5 V V(BR)CEO IC –6 A IB –1 PC Tj Ratings Unit VCB=–110V –100max µA –100max µA –110min V hFE VCE=–4V, IC=–5A 5000min∗


    Original     		2SB1686 2SD2642) 100max 5000min 100typ 110typ 110min O220F) 2SD2642 2SB1686 FM20 2SD2642 equivalent transistor 2SB1686 PDF

    2SA1488

    Abstract: 2SA1488A FM20
    Text: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= VEBO –6 V IEBO IC –4 A V(BR)CEO –100max –100max µA –60 –80 VEB=–6V V µA –100max –60min IC=–25mA –1 A hFE VCE=–4V, IC=–1A 40min PC 25(Tc=25°C)


    Original     		2SA1488/1488A 2SC3851/A) 100max 60min 40min 15typ 90typ 80min 2SA1488 2SA1488A FM20 PDF

    2SB1259

    Abstract: 2SD2081 FM20
    Text: 3 k Ω (1 0 0Ω) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA –120min VCE=–4V, IC=–5A 2000min V IB –1 A VCE(sat) IC=–5A, IB=–10mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–5A, IB=–10mA –2.0max


    Original     		2SB1259 2SD2081) 10max 120min 2000min 100typ 145typ O220F) 2SB1259 2SD2081 FM20 PDF

    2SB1257

    Abstract: 2SD2014 FM20 nk co DSA0016505
    Text: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max


    Original     		2SB1257 2SD2014) 10max 60min 2000min 150typ 75typ O220F) 50x50x2 2SB1257 2SD2014 FM20 nk co DSA0016505 PDF

    2SA1568

    Abstract: 2SC4065 FM20 DSA0016503
    Text: 2SA1568 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4065 A IB –3 mA –60min V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V 16.9±0.3 –60max V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A


    Original     		2SA1568 2SC4065) 50min 35max 40typ 330typ 100max O220F) 100x100x2 50x50x2 2SA1568 2SC4065 FM20 DSA0016503 PDF

    2SA1859A

    Abstract: 2SA1859 FM20
    Text: 2SA1859/1859A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4883/A V(BR)CEO IC=–10mA –180min –150min 60 to 240 V –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A


    Original     		2SA1859/1859A 2SC4883/A) 180min 150min 60typ 30typ 10max O220F) 2SA1859 2SA1859A FM20 PDF

    2SA1859A

    Abstract: 2SA1859 Silicon PNP Epitaxial Planar Transistor fm20 FM20 2SC4883
    Text: 2SA1859/1859A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4883/A V(BR)CEO IC=–10mA –150min –180min 60 to 240 V –1 A hFE VCE=–10V, IC=–0.7A PC 20(Tc=25°C) W VCE(sat) IC=–0.7A, IB=–70mA –1.0max V Tj 150 °C fT VCE=–12V, IE=0.7A


    Original     		2SA1859/1859A 2SC4883/A) 10max 150min 180min 60typ 30typ O220F) 2SA1859 2SA1859A Silicon PNP Epitaxial Planar Transistor fm20 FM20 2SC4883 PDF

    2SB1258

    Abstract: 2SD1785 FM20 DSA0016505
    Text: 3 k Ω (1 0 0Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj


    Original     		2SB1258 2SD1785) 100min 1000min 100typ 10max O220F) 50x50x2 2SB1258 2SD1785 FM20 DSA0016505 PDF

    2SA2042

    Abstract: FM20
    Text: 2SA2042 Silicon PNP Epitaxial Planar Transistor V ICBO VCEO −50 V IEBO VEBO −6 V V BR CEO IC −10（pulse−20） A hFE IB −3 A −10max VEB＝−6V −10max µA −50min V VCE＝−2V, IC＝−1A 130~310 VCE(sat) IC＝−5A, IB＝−0.1A −0.5max


    Original     		2SA2042 pulse-20 VCB-50V -10max IC-25mA -50min VCE-12V, 60typ VCB-10V, 2SA2042 FM20 PDF

    2SB1258

    Abstract: 2sb125 2SD1785 FM20
    Text: 3 k Ω (1 0 0Ω) E 2SB1258 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) A µA –100min hFE VCE=–2V, IC=–3A 1000min V IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max Tj


    Original     		2SB1258 2SD1785) 100min 1000min 100typ 10max O220F) 2SB1258 2sb125 2SD1785 FM20 PDF

    2SA1568

    Abstract: 2SA1568 equivalent 2SC4065 FM20 2SA1568,A1568
    Text: 2SA1568 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4065 A IB –3 mA –60min V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V 16.9±0.3 –60max V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A


    Original     		2SA1568 2SC4065) 50min 35max 40typ 330typ 100max O220F) 2SA1568 2SA1568 equivalent 2SC4065 FM20 2SA1568,A1568 PDF

    2SB1351

    Abstract: FM20 2SB135
    Text: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A


    Original     		2SB1351 60min 2000min 130typ 170typ 10max O220F) 50x50x2 2SB1351 FM20 2SB135 PDF

    2SB1351

    Abstract: FM20 DSA0016505
    Text: 2 k Ω (1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A


    Original     		2SB1351 60min 2000min 130typ 170typ 10max O220F) 50x50x2 2SB1351 FM20 DSA0016505 PDF

    2SA1488

    Abstract: 2SA1488A FM20 2SC3851 A DSA0016503
    Text: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=–10V, f=1MHz Tstg VEB=–6V µA V –80


    Original     		2SA1488/1488A 2SC3851/A) 100max 60min 80min 40min 15typ 90typ O220F) 2SA1488 2SA1488 2SA1488A FM20 2SC3851 A DSA0016503 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSE T> • SANKEN ELECTRIC CO LTD 7TÎD741 0000^22 S4G BISAKJ Silicon PNP Epitaxial Planar 2SA1643 ☆ Low VcE sat Transistor * Com plem ent to type 2S C 4 3 2 7 Application Example: Electrical Characteristics Symbol Absolute Maximum Ratings Symbol (Ta= 25"C)


    OCR Scan     		2SA1643 10max 50min 75typ 45x01 T0220) PDF

    Untitled

    Abstract: No abstract text available
    Text: ^SANKE^^LECTRIC CO LTD 5SE » • 7 * M 0 7 4 1 0000*121 b04 « S A K U Silicon PNP Epitaxial Planar 2SA1568 ☆ Low VcEisati With D io d e Transistor ☆Complement to type Application Example: D C M otor Driver, Chopper Regulator 2SC4065 -FM20 • Outline Drawing 4 •


    OCR Scan     		2SA1568 2SC4065 -FM20 60max 45x01 T0220) PDF