"Point Contact Diodes"
Abstract: 1N1611A 1N32A 1N830 1N32 1N32 VIDEO DETECTOR 1N377 tangential point contact 1N3778
Text: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal
|
Original
|
PDF
|
CS100
CS101
1N830
1N830A
1N32A
1N833
"Point Contact Diodes"
1N1611A
1N32A
1N830
1N32
1N32 VIDEO DETECTOR
1N377
tangential
point contact
1N3778
|
1N831
Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and
|
Original
|
PDF
|
1N831
1N831A
1N831B
1N831C
1N832
1N832A
1N832B
1N832C
1N831
1N832A
"Point Contact Diodes"
Silicon Point Contact Mixer Diodes
|
1N830A
Abstract: "Point Contact Diodes" 1N32 VIDEO DETECTOR MicroMetrics tangential 1N1611 1N32 1N32A 1N830 1N833
Text: Point Contact Diodes: 1N Series Ka Band Point Contact Detector Diodes Description This MicroMetrics 1N series of Point Contact Detector diodes is designed for applications through Ka-Band. These diodes employ epitaxial silicon optimized for high tangential signal
|
Original
|
PDF
|
CS100
CS101
1N830
1N830A
1N32A
1N833
1N830A
"Point Contact Diodes"
1N32 VIDEO DETECTOR
MicroMetrics
tangential
1N1611
1N32
1N32A
1N830
1N833
|
detector diode
Abstract: "Point Contact Detector" DDA5093 point contact
Text: DDA5093 SILICON POINT CONTACT DETECTOR DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI DDA5093 is a point contact detector diode designed for applications up to 60 GHz. MAXIMUM RATINGS O PDISS 100 mW @ TC = 25 C TJ -65 C to +150 C TSTG -65 C to +175 C O O O O
|
Original
|
PDF
|
DDA5093
DDA5093
detector diode
"Point Contact Detector"
point contact
|
DO-23
Abstract: Silicon Detector MA41202C "Point Contact Mixer"
Text: MA41202C SILICON DETECTOR DIODE PACKAGE STYLE DO-23 DESCRIPTION: The MA41202C is a High Burnout Point Contact Mixer Diode. MAXIMUM RATINGS I 20 mA V 1.0 V PDISS 10 ERGS @ TC = 25 C TJ -55 C to +150 C TSTG -55 C to +150 C O O O O O NONE CHARACTERISTICS O TC = 25 C
|
Original
|
PDF
|
MA41202C
DO-23
MA41202C
DO-23
Silicon Detector
"Point Contact Mixer"
|
BAR66
Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Text: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode
|
Original
|
PDF
|
|
AN-065
Abstract: BAT64 spice model sot-323 small signal schottky diode BAT64-04 BAT64-04W infineon schottky diode bat64 AN065 schottky diode cross reference say sot 23 DIODE 0.7v
Text: Applications Note No. 065 Silicon Discretes Schottky Diodes for Clipping, Clamping and Transient Suppression Applications • Ultra-low series resistance for higher current handling • Low Capacitance • Fast Switching picosecond Series-Pair Configuration
|
Original
|
PDF
|
OT-23
OT-323
OT-23
OT-343
OT-23,
OT-323,
OT-343
SCD-80
AN-065
BAT64 spice model
sot-323 small signal schottky diode
BAT64-04
BAT64-04W
infineon schottky diode bat64
AN065
schottky diode cross reference
say sot 23
DIODE 0.7v
|
1N53C
Abstract: 1N78 1N53A 1N53D cs103 1N53 1N53B 1N78A 1N78B CS102
Text: Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low
|
Original
|
PDF
|
CS102
1N78A
1N78B
1N53C
1N78
1N53A
1N53D
cs103
1N53
1N53B
1N78A
1N78B
CS102
|
CS103
Abstract: 1n53d diode 1N78A 1N78D 1N53B ka-band mixer 1N78B "Point Contact Diodes" CS102 Silicon Point Contact Mixer Diodes
Text: Point Contact Diodes Point Contact Diodes: 1N Series Ka Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through KA-Band. Each device in this series is in a coaxial package specially designed for low
|
Original
|
PDF
|
CS102
1N78A
1N78B
CS103
1n53d
diode 1N78A
1N78D
1N53B
ka-band mixer
1N78B
"Point Contact Diodes"
CS102
Silicon Point Contact Mixer Diodes
|
1N23 diode
Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure
|
OCR Scan
|
PDF
|
|
a5090d
Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
Text: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan
|
OCR Scan
|
PDF
|
|
LN358
Abstract: x band diode detector waveguide 1N830A P009 1N358A KA band diode detector waveguide video Log Amplifier detector 18 GHz DDA5093 "Point Contact Diodes" 1n833
Text: Silicon Point Contact Detector Diodes 'T en cry Features • Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan
|
OCR Scan
|
PDF
|
|
1N358R
Abstract: 1N358 1N830A 1N1611AR 1N3582 dda5093 1N1611 P-009 1N830 Silicon Point Contact Diode
Text: Silicon Point Contact Detector Diodes EDAlpha 1N358,1N1611,1N83X, DDA4072, DDA5XX, DDA6797 Series Features Broadband Operation Bias Not Required Description Maximum Ratings Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz .
|
OCR Scan
|
PDF
|
1N358
1N1611
1N83X,
DDA4072,
DDA6797
1N358R
1N830A
1N1611AR
1N3582
dda5093
P-009
1N830
Silicon Point Contact Diode
|
1N2102
Abstract: DO-22 1N1611A 1N311 1n3143 DO-37 1N830A 1N2926 1n76a 1N76
Text: }{È \\ SILICON POINT CONTACT DETECTOR DIODES ASI Point Contact Detector Diodes are designed for applications from UHF through 16 GHz. They feature high burnout resistance, broadband operation and high tangential signal sensitivity. These detector diodes are
|
OCR Scan
|
PDF
|
DO-22,
DO-23,
DO-37
1N830
1N830A
1N2102
1N32A
1N76A
1N833
1N833A
DO-22
1N1611A
1N311
1n3143
1N2926
1N76
|
|
|
1N23 diode
Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for
|
OCR Scan
|
PDF
|
1N3205
1N25XX,
1N78X,
DMA649X-XXX
1N23 diode
1N53AR
1N26A diode
Silicon Point Contact Mixer Diodes
1N415
1N832A
N178
kaba
1N23WG
1N26BR
|
1N23C diode
Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure
|
OCR Scan
|
PDF
|
DO-22,
DO-23
DO-37
ardN21H
1N21HR
1N150
1N160
1N150R
1N160R
1N23C
1N23C diode
DIODE ku 1490
1N25 diode
1N26A diode
1N415C
1N4294
1N4603R
1N26BR
|
1N1611AR
Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Text: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed
|
OCR Scan
|
PDF
|
|
1N23 diode
Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re ceiver to deteriorate no greater than 0.1 dB due to local
|
OCR Scan
|
PDF
|
|
1N23C
Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:
|
OCR Scan
|
PDF
|
|
IN830A
Abstract: Microwave detector diodes Silicon Detector tangential UHF DETECTOR S359 IN830
Text: MICROW AVE DIODE CORPORATION SILICON UHF DETECTOR DIODE 00 » . - {nOT't*The IN 830 and IN 8 3 0 A are point contact barrier diodes used in signal detection. While Tangential ' Sensitivity is not specified in this instance, the diodes posess a minimum of -40 dbm up to 3 G H Z .
|
OCR Scan
|
PDF
|
IN830
IN830A
Microwave detector diodes
Silicon Detector
tangential
UHF DETECTOR
S359
|
CV2154
Abstract: CV2155 microwave mixer diode mixer diode CV215 noise diode Microwave PIN diode
Text: SIM2 SIM5 S IL IC O N M IC R O W A V E M IX E R D IO D E Silicon point-contact coaxial diodes, commercial equivalents of CV2154 and CV2155 respectively. They are intended as mixers at frequencies up to 12Gc/s. The two types have identical dimensions and characteristics but
|
OCR Scan
|
PDF
|
CV2154
CV2155
12Gc/s.
SO-26
500Mc/s
10Mc/s
9375Mc/s
microwave mixer diode
mixer diode
CV215
noise diode
Microwave PIN diode
|
Silicon Point Contact Mixer Diodes
Abstract: Mixer Silicon Detector
Text: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .
|
OCR Scan
|
PDF
|
|
Silicon Point Contact Diode
Abstract: No abstract text available
Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard
|
OCR Scan
|
PDF
|
375GHz
DC1596)
OC1301)
-10dB
-20dB
35GHz
150pA.
Silicon Point Contact Diode
|
back Tunnel diode
Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.
|
OCR Scan
|
PDF
|
|
