SILICON POWER CUBE
Abstract: "Silicon Power Cube" silicon power cube m50 600R M25E M5060 M2535SB POWER CUBE SBR 400V m25 diode
Text: SILICON POWER CUBE CORP 20E D • OQOQSQfl =1 f l E 5 3 e1Qa SILICON POWER CUBE rvT iïim m M 2 5 /M 5 0 SERIES 3 5A -100A POWER DIODE CIRCUITS FEATURES PARAMETER DC Output Current, 10 Max. DC Output Current, 30 (Max.) One-Cycle Surge Current (Peak) l2t for Fusing (Max.)
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M25/M50
5A-100A
2500VAC
M5060
SILICON POWER CUBE
"Silicon Power Cube"
silicon power cube m50
600R
M25E
M5060
M2535SB
POWER CUBE
SBR 400V
m25 diode
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Silicon Power Cube
Abstract: "Silicon Power Cube" ODC5Q OAC5Q
Text: SILICON POWER CUBE CORP ñSSBTOñ Q Q 0 0 S H 3 S EOE D SILICON POWER CUBE I/O QUAD MODULES n - - T m -E °i - IACQ/IDCQ/OACQ/ODCQ SERIES E ach quad module has four I/O channels of the sam e type. They provide a high packaging density m eans of reliably interfacing logic level control system s with external loads su ch as
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ICS-230)
I102i
mustsecm006
Silicon Power Cube
"Silicon Power Cube"
ODC5Q
OAC5Q
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Silicon Power Cube
Abstract: "Silicon Power Cube" 0-30VDC
Text: SILICON POÜJER CUBE CORP 50E D U Ö5S3TGS 00 00 2 2 2 3 • SILICON POWER CUBE FLAT PACK S/O MODULES IÄCP/IDCP/OÄCP/ODCP SERIES T h e s e flat p a ck m odules offer reliable input-output interfacing in a low profile p a c k a g e outline that perm its P C board spacing on half-in c h centers.
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ICS-230)
Silicon Power Cube
"Silicon Power Cube"
0-30VDC
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BU508 TRANSISTOR equivalent
Abstract: BU508 equivalent BU508 TRANSISTOR specification BU508 BU508A equivalent bu508d equivalent BU508A TRANSISTOR equivalent 4229P-L00-3C8 BU508A BU508 CIRCUITS
Text: MOTOROLA SC XSTRS/R F 12E D | b3b7aSM QGflMfll? 3 | MOTOROLA SEM ICONDUCTOR TECHNICAL DATA BU508 BU508D BU508A BU508AD NPIM Silicon Power Transistors Horizontal Deflection . . . specifically designed for use in large screen color deflection circuits. • Glass Passivated Patented Photoglass
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b3b72S4
O-218
O-218AC
BU508 TRANSISTOR equivalent
BU508 equivalent
BU508 TRANSISTOR specification
BU508
BU508A equivalent
bu508d equivalent
BU508A TRANSISTOR equivalent
4229P-L00-3C8
BU508A
BU508 CIRCUITS
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2SD219
Abstract: No abstract text available
Text: HITACHI 2SD219 3 -Silicon NPN Epitaxial Low Frequency Power Amplifier Table 1 Absolute Maximum Ratings TO-92MOD Ta = 25°C Item Symbol Rating Unit Collector to base voltage VCB0 V Collector to emitter voltage VCE0 Emitter to base voltage VEB0
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2SD219
O-92MOD
2SD2193
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Silicon Power Cube
Abstract: "Silicon Power Cube" fuse resistor 33Kohm IDC5B IAC15 IAC15A IAC24 IDC15 OAC15 OAC15A
Text: SILICON POWER CUBE CORP 50E D aasnoê S IL IC O N PO W ER CUBE 00Q02E0 T SOLID STATE OPTO“ISOLATED I/O MODULES n SAC/SDC/OAC/ODC SERIES ^ u - a 0] Industrial environments can subject sensitive microelectronic circuits to undesirable stresses In the form of voltage transients, electrical noise, shock, vibration, etc. These can result in permanent
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00Q02E0
r-qi-30)
33KOHM
Silicon Power Cube
"Silicon Power Cube"
fuse resistor 33Kohm
IDC5B
IAC15
IAC15A
IAC24
IDC15
OAC15
OAC15A
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Silicon Power Cube
Abstract: M2525 "Silicon Power Cube" silicon power cube scr M25E 40A 1000v scr SCR TIC 103 M2540 silicon power cube g1
Text: SILICON POWER CUBE ' M 2 5 SERIES 2 S A /4 0 A POWER S C R /D IO D E MODULES FEATURES PARAM ETER D C O u tp u t C u rre n t M ax. O n e -C y c le S u rg e C u rre n t (Peak) l2t fo r F u sing (M ax.) R a te -o f-R is e o f O n -S ta te C u rre n t (M ax.)
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5A/40A
2500VAC
120VAC,
320VAC,
440VAC
480VAC
Silicon Power Cube
M2525
"Silicon Power Cube"
silicon power cube scr
M25E
40A 1000v scr
SCR TIC 103
M2540
silicon power cube g1
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schematic diagram sg3524 dc-ac inverter
Abstract: CA3162E schematic diagram ca3524 dc-ac inverter pin diagram of IC ca3130 sg3524 PWM GENERATOR sg3524 pwm fairchild FND507 SG3524 Inverter SG3524 isolated converter using SG3524
Text: CA1524, CA2524 CA3524 Regulating Pulse Width Modulator April 1994 Features Description • Complete PWM Power Control Circuitry The CA1524, CA2524, and CA3524 are silicon monolithic integrated circuits designed to provide all the control circuitry for use in a broad range of switching regulator circuits.
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CA1524,
CA2524
CA3524
CA2524,
CA3524
100kHz
schematic diagram sg3524 dc-ac inverter
CA3162E
schematic diagram ca3524 dc-ac inverter
pin diagram of IC ca3130
sg3524 PWM GENERATOR
sg3524 pwm fairchild
FND507
SG3524 Inverter
SG3524
isolated converter using SG3524
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ca1215
Abstract: Intersil AN6915 "Application of the CA1524 series PWM lC" 36Vdc ca3162e equivalent FND507 intersil application note switch mode power supply using SG3524 sg3524 application Intersil AN6915
Text: CA1524, CA2524 CA3524 TE LE BSO 524 CA2 NO IS A T DUC PRO Regulating Pulse Width Modulator October 2000 Features Description • Complete PWM Power Control Circuitry The CA1524 and CA3524 are silicon monolithic integrated circuits designed to provide all the control circuitry for use in
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CA1524,
CA2524
CA3524
CA1524
CA3524
SG1524,
SG2524,
SG3524,
ca1215
Intersil AN6915 "Application of the CA1524 series PWM lC"
36Vdc
ca3162e equivalent
FND507
intersil application note
switch mode power supply using SG3524
sg3524 application
Intersil AN6915
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schematic diagram sg3524 dc-ac inverter
Abstract: FND507 pinout schematic diagram ca3524 dc-ac inverter sg3524 PWM GENERATOR dc-ac inverter sg3524 isolated converter using SG3524 schematic diagram dc-ac inverter CA3524 schematic diagram dc-ac inverter sensor SG3524 Inverter
Text: CA1524, CA2524 CA3524 TE LE BSO 524 CA2 NO IS A T DUC PRO Regulating Pulse Width Modulator October 2000 Features Description • Complete PWM Power Control Circuitry The CA1524 and CA3524 are silicon monolithic integrated circuits designed to provide all the control circuitry for use in
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CA1524,
CA2524
CA3524
CA1524
CA3524
SG1524,
SG2524,
SG3524,
schematic diagram sg3524 dc-ac inverter
FND507 pinout
schematic diagram ca3524 dc-ac inverter
sg3524 PWM GENERATOR
dc-ac inverter sg3524
isolated converter using SG3524
schematic diagram dc-ac inverter
schematic diagram dc-ac inverter sensor
SG3524 Inverter
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FND507 pinout
Abstract: schematic diagram sg3524 dc-ac inverter isolated converter using SG3524 h bridge sg3524 schematic diagram ca3524 dc-ac inverter sg3524 PWM GENERATOR sg3524 pwm fairchild CA2524 sg3524 inverters schematic diagram CA3524
Text: CA1524, CA2524 CA3524 S E M I C O N D U C T O R Regulating Pulse Width Modulator April 1994 Features Description • Complete PWM Power Control Circuitry The CA1524, CA2524, and CA3524 are silicon monolithic integrated circuits designed to provide all the control circuitry
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CA1524,
CA2524
CA3524
CA2524,
CA3524
100kHz
2N4037
CA1524
4700pF
FND507 pinout
schematic diagram sg3524 dc-ac inverter
isolated converter using SG3524
h bridge sg3524
schematic diagram ca3524 dc-ac inverter
sg3524 PWM GENERATOR
sg3524 pwm fairchild
CA2524
sg3524 inverters schematic diagram
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Untitled
Abstract: No abstract text available
Text: TIC225 SERIES SILICON TRIACS Copyright 0 1997, Power Innovation» Limited, UK_ JULY 1975 - R E V IS E D M A R C H 1997 • Sensitive Gate Trlacs • B A RMS, 70 A Peak • Glass Passivated Wafer • 400 V to 800 V Otl-State Voltage
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TIC225
T0-220
TIC225D
TIC225M
TIC225S
TIC225N
50-Hz
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BU208
Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
Text: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection
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BU207
BU208
BU208
14-MAXIMUM
POT CORE 4229P-L00
transistor bu208
4229PL00-3C8
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4229P-L00-3C8
Abstract: 20A400 MJ12005D POT CORE 4229P-L00 Ferrox EC52-3C8
Text: MOTOROLA SC XST R S/ R F ME D I t3b75sq 0 0850 17 0 | ^ 33-/3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e sig n o rw D ata Sheet 8.0 AMPERE NPN SILICON POWER TRANSISTORS NPN HORIZONTAL DEFLECTION TRANSISTOR WITH INTEGRATED DAMPER DIODE 1500 VOLTS 100 WATTS . . . specifically designed for use in large-screen color-deflection
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t3b75sq
MJ12005D
C01LECT0
4229P-L00-3C8
20A400
MJ12005D
POT CORE 4229P-L00
Ferrox EC52-3C8
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IR 92 0151
Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8
Text: MOTORCLA SC XSTRS/R F 12E D | fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection
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MJ12002
14-MAXIMUM
IR 92 0151
MJ12002
MJ-12002
TC204A
4229PL00-3C8
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MS 1117 ADC
Abstract: MJ12004 MJH12004 mjh12
Text: motorola sc xstrs/r F 126 D I b3t7SSt ooasaai 1 I MOTOROLA MJ12004 MJH12004 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s D a ta S h e e t 5 .0 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTORS . . . specifically designed for use in large screen color deflection
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MJ12004
MJH12004
J12004
MS 1117 ADC
MJH12004
mjh12
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2SA1174
Abstract: 2SC2785 M
Text: NEC PNP SILICON TR AN SISTO R ELECTRON DEVICE 2SA11 74 D ESCRIPTIO N The 2SA1174 is best fo r use as the m iddle range am plifier in H i-Fi stereo co n tro l am plifiers, power am plifiers, and etc. P AC K A G E D IM E N S IO N S in m illim e te rs FE A TU R E S
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2SA11
2SA1174
2SC2785
2SC2785 M
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 1/2 R404.116.000 4 GHz 1 W QN Male TERMINATION Series : CHARGE dimensions are in mm. . pn . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS MATERIALS CuZn40Pb3 CuBe2 CuBe2 PTFE EPDM,SILICON RUBBER PLATINGS µm
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CuZn40Pb3
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CuZn40Pb3
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 1/2 R404.116.000 4 GHz 1 W QN Male TERMINATION Series : CHARGE dimensions are in mm. . po . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS MATERIALS CuZn40Pb3 CuBe2 CuBe2 PTFE EPDM,SILICON RUBBER PLATINGS µm
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CuZn40Pb3
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 1/2 R404.116.000 4 GHz 1 W QN Male TERMINATION Series : CHARGE dimensions are in mm. . po . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS MATERIALS CuZn40Pb3 CuBe2 CuBe2 PTFE EPDM,SILICON RUBBER - PLATINGS µm
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CuZn40Pb3
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CuZn40Pb3
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 1/2 R404.116.000 4 GHz 1 W QN Male TERMINATION Series : CHARGE dimensions are in mm. . po . ao COMPONENTS BODY CENTER CONTACT OUTER CONTACT INSULATOR GASKET OTHERS PARTS MATERIALS CuZn40Pb3 CuBe2 CuBe2 PTFE EPDM,SILICON RUBBER PLATINGS µm
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CuZn40Pb3
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Untitled
Abstract: No abstract text available
Text: Telefax 07157/125-120 07157/125-0 64 OvJ o Lerchenstrasse 35 Telefon □□ Steinenbronn SW 12, K.Gcfrtner GmbH 71144 Anschlußmaße nach IEC 169-16 / mating face according to IEC 169-16 Innenleiter / inner conductor CuBe2 Cu2Ag5 sonstige Metallteile / other metal parts
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CuZn39Pb3
J01026A0006
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Untitled
Abstract: No abstract text available
Text: Telefax 07157/125-120 64 07157/125-0 _ Ì, Q _ Lerchenstrasse 35 Telefon □□ Steinenbronn SW 12 K.Gcfrtner GmbH 71144 Anschlußmaße nach IEC 169-16 / mating face according to IEC 169-16 Innenleiter / inner conductor CuBe2 Cu2Ag5 sonstige Metallteile / other metal parts
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CuZn39Pb3
J01026A0008
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Untitled
Abstract: No abstract text available
Text: Telefax 07157/125-120 07157/125-0 64 O Q _ Lerchenstrasse 35 Telefon □□ Steinenbronn SW 12, K.Gättner GmbH 71144 Anschlußmaße nach IEC 169-16 / mating face according to IEC 169-16 Innenleiter / inner conductor CuBe2 Cu2Ag5 sonstige Metallteile / other metal parts
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CuZn39Pb3
J01026A0009
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