M1MA141KT1
Abstract: M1MA141KT1G M1MA142KT1 M1MA142KT1G
Text: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1G,
M1MA142KT1G
SC-70
M1MA141KT1
M1MA142KT1
M1MA141KT1/D
M1MA141KT1
M1MA141KT1G
M1MA142KT1
M1MA142KT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
S-LM1MA142KT1G
AEC-Q101
70/SOTâ
LM1MA141KT1G
S-LM1MA141KT1G
LM1MA142KT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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PDF
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SOT-323
Abstract: M1MA141KT1G M1MA142KT1G marking mh sot323 LM1MA142K
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOT
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
SOT-323
M1MA141KT1G
M1MA142KT1G
marking mh sot323
LM1MA142K
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PDF
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
M1MA142KT1
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PDF
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23marking
Abstract: No abstract text available
Text: M1MA141KT1, M1MA142KT1 Preferred Device Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1,
M1MA142KT1
SC-70
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
23marking
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode M1MA141KT1 M1MA142KT1 This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141KT1
M1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
70/SOT
M1MA142KT2
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PDF
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melf diode color
Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode
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Original
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LL4148
1111REVERSE
500mW
melf diode color
glass mini melf diode
MELF DIODE color bands
LL4148
r20V
LL4148 diode galaxy electrical
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features DO-34 GLASS Silicon epitaxial planar diode High speed switching diode 500mW power dissipation These diodes are also available in glass case DO-34,Mini-MELF 0.079(2.0)
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Original
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1N4148
DO-34
500mW
DO-35
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PDF
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LM1MA142WKT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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SC-70
LM1MA141WKT1G
S-LM1MA141WKT1G
LM1MA142WKT1G
S-LM1MA142WKT1G
70/SOTâ
AEC-Q101
LM1MA141WKT1G,
LM1MA142WKT1G,
LM1MA142WKT1G
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PDF
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1N4151
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES 1N4151 REVERSE VOLTAGE : 50 V CURRENT: 0.15 A DO-35 GLASS Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode
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Original
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1N4151
DO-35
1N4151
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PDF
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1N4448
Abstract: diode 1N4448
Text: BL GALAXY ELECTRICAL 1N4448 REVERSE VOLTAGE : 75 V CURRENT: 0.15 A SMALL SIGNAL SWITCHING DIODE FEATURES DO - 35 GLASS Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode
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Original
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1N4448
DO-35,
1N4448
diode 1N4448
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PDF
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TIP102
Abstract: TIP105
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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Original
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TIP105
TIP105
O-220
TIP102.
O-220
P011CI
TIP102
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PDF
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TIP102
Abstract: TIP105
Text: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING
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Original
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TIP105
TIP105
O-220
TIP102.
O-220
TIP102
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PDF
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M1MA142WKT1
Abstract: dual reverse diode
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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M1MA141WKT1
M1MA142WKT1
SC-70
70/SOT
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA142WKT2
M1MA142WKT1
dual reverse diode
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low power surface mount applications, where board space is at a premium.
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Original
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LDAN222T1
SC-89
LDAN222T1
LDAN222T1-1/3
LDAN222T1-2/3
463C-01
463C-02.
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PDF
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LM1MA142WAT1G
Abstract: No abstract text available
Text: S-LM1MA142WAT3G LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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S-LM1MA142WAT3G
AEC-Q101
LM1MA141WAT1G
S-LM1MA141WAT1G
LM1MA142WAT1G
S-LM1MA142WAT1G
SC-70/SOT-323
LM1MA141WAT1G,
LM1MA142WAT1G,
LM1MA142WAT1G
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PDF
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dual switching diode
Abstract: diode MARKING CODE MN diode code marking MN MN DIODE
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141WAT1
M1MA142WAT1
SC-70/SOT-323
M1MA141/2WAT1
inch/3000
M1MA141/2WAT3
inch/10
M1MA142WAT2
dual switching diode
diode MARKING CODE MN
diode code marking MN
MN DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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Original
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
LM1MA141WKT1G
LM1MA142WKT1
70/SOTâ
32VOLTAGE
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
LM1MA141WAT1G
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PDF
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anode common fast recovery diode dual
Abstract: LM1MA142WAT1G Diode marking CODE 5M
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
anode common fast recovery diode dual
LM1MA142WAT1G
Diode marking CODE 5M
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PDF
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