SILICON TRANSISTOR Search Results

SILICON TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

SILICON TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IC 8088 Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500 Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well	Original	ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500	PDF
BD435 Abstract: BD441 Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON	Original	BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441	PDF
Untitled Abstract: No abstract text available Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON	Original	BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G	PDF
2N4401 transistor Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,	Original	CMLT4413 OT-563 CMLT4413 2N4401 2N4403 150mA, 2N4401 transistor 2N4401 NPN Switching Transistor NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount	PDF
Untitled Abstract: No abstract text available Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with	Original	2SA1694 2SA1694 2SA1694L-x-T3P-T 2SA1694G-x-T3P-T 2SA1694L-x-T3N-T 2SA1694G-x-T3N-T QW-R214-016	PDF
13003d Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d	PDF
13003D Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D	PDF
MJ3771 Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808 Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.	OCR Scan	MJ6257 MJ3771 MJ6302 MJ3773 MJ6700 MJ6701 MJ6701 MJ6257 MJ6302 ADC 808	PDF
MJE2160 Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103 Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications	OCR Scan	MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103	PDF
MPQ2369 Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907 Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.	OCR Scan	MPQ2369 MHQ2369 MPQ2483 MPQ2484 2N2483 2N2484 O-116 MPQ2483 MPQ2369 MHQ2906 2N2484 MPQ2484 MPQ2906 MPQ2907	PDF
MPS8099 Abstract: MPS8599 IC 7410 transistor 2sc 973 AN-415 MPS8098 MPS8598 Text: MPS8098, MPS8099NPN MPS8598, MPS8599PNP SILICON COMPLEMENTARY SILICON ANNULAR AMPLIFIER TRANSISTORS COMPLEMENTARY SILICON AMPLIFIER TRANSISTORS . . . designed for general-purpose amplifier applications for audio circuits. • Collector Emitter Breakdown Voltage —	OCR Scan	MPS8098, MPS8099NPN MPS8598, MPS8599PNP MPS8598 MPS8099, MPS8599 MPS8098 MPS8099 MPS8599 IC 7410 transistor 2sc 973 AN-415	PDF
MD7002 Abstract: RB2K MD7002A MD7002B IB 6407 02k02 Text: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.	OCR Scan	MD7002 MD7002A MD7002B 100/uAdc M07CI02A MD7CI02B MD7002B MD7002A MD7002 RB2K IB 6407 02k02	PDF
MD3762 Abstract: MD3762F MQ3762 rfl3 Text: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —	OCR Scan	MD3762 MD3762F MQ3762 MD3762 MQ3762 rfl3	PDF

MJE370 Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439 Text: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers	OCR Scan	MJE3370 MJE370 MJE3371 MJE371 MJE3439, MJE3440 MJE3439 MJE3440 JE3440 MJE3370 MJE3371 MJE-3439	PDF
md8003 Abstract: md8002 md8001 65407 Text: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap plications. •	OCR Scan	MD8001 MD8002 MD8003 MD8001 MD8003 65407	PDF
MMCM2907 Abstract: MMCM3798 MMCM3799 MMCM3903 MMCM3904 MMT2907 MMT3798 MMT3903 Text: MMCM2907 SILICON MICRO-T PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . designed for general-purpose switching and am plifier applications, where high-density packaging is required. Space Saving Micro-Miniature Packages	OCR Scan	MMCM2907 MMT2907 MMCM2907 MMCM3798, MMCM3799 MMT3798 MMCM3903, MMCM3904 MMT3903 MMCM3798 MMCM3799 MMCM3903 MMCM3904	PDF
MJE130 Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high speed switching applications. • COMPLEMENTARY SILICON	OCR Scan	MJE220 MJE225 MJE230 MJE235 MJE220/MJE222 MJE230/MJE232 MJE223/MJE225 MJE233/MJE235 MJE221 MJE222 MJE130 mje135 MJE231 200 watts audio amp power transistors pnp	PDF
MMT72 Abstract: No abstract text available Text: MMT72 SILICON NPN SILICON ANNULAR MICRO-MINIATURE NPN SILICON SWITCHING TRANSISTOR TRANSISTOR . . . designed fo r high-speed, low-current switching applications where higtvdensity packaging is required. • Ideal for Thick Film Digital C ircuit Applications	OCR Scan	MMT72 10mAdc, 10Vdc MMT72	PDF
m0325 Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261 Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.	OCR Scan	MD3250, MD3251, MQ3251 50mAdc MD3251 MD3250' m0325 M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261	PDF
MD918 Abstract: MD918A K 1170 MD918F MD918B MD918BF Text: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.	OCR Scan	MD918, MD918F, MD918 MD918F MD918A K 1170 MD918B MD918BF	PDF
MHQ6100 Abstract: MHQ6100A ADE 352 2N3798 2N930 Text: MHQ6100 SILICON MHQ6100A QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS QUAD DUAL-IN-LINE SILICON COMPLEMENTARY PAIR TRANSISTORS . designed fo r complem entary circuits where low-level, low-noise am plification is required. •	OCR Scan	MHQ6100 MHQ6100A 2N3798 2N930 O-116 MHQ6100 MHQ6100A ADE 352 2N3798 2N930	PDF
MQ3799A Abstract: MQ3798 MQ3799 4PD4 Text: MQ3798 silicon MQ3799 MQ3799A PNP SILICON ANNULAR PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE TRANSISTORS . . . designed for use in high-gain, low noise amplifiers; front end detectors and temperature compensation applications. Low Collector-Emitter Saturation Voltage —	OCR Scan	MQ3798 MQ3799 MQ3799A MQ3799A MQ3798 4PD4	PDF
K83 Package Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105 Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —	OCR Scan	MPQ1050 O-116 30Vdc 500mAdc, 50mAdc) MPQ2221 MPQ2222 MHQ2221 K83 Package MPQ1050 transistor k84 MPQ2221 MPQ105	PDF

SILICON TRANSISTOR Search Results

SILICON TRANSISTOR Result Highlights (5)

SILICON TRANSISTOR Datasheets Context Search

IC 8088

BD435

Untitled

2N4401 transistor

Untitled

Untitled

13003d

13003D

MJ3771

MJE2160

MPQ2369

MPS8099

MD7002

MD3762

MJE370

md8003

MMCM2907

MJE130

MMT72

m0325

MD918

MHQ6100

MQ3799A

K83 Package