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    SILICON TRANSISTOR Search Results

    SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IC 8088

    Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
    Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well


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    ML4T645-S-512 ML4T645 IC 8088 MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500 PDF

    BD435

    Abstract: BD441
    Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


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    BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


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    BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G PDF

    2N4401 transistor

    Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
    Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,


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    CMLT4413 OT-563 CMLT4413 2N4401 2N4403 150mA, 2N4401 transistor 2N4401 NPN Switching Transistor NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with


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    2SA1694 2SA1694 2SA1694L-x-T3P-T 2SA1694G-x-T3P-T 2SA1694L-x-T3N-T 2SA1694G-x-T3N-T QW-R214-016 PDF

    13003d

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d PDF

    13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS „ DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


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    13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D PDF

    MJ3771

    Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808
    Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.


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    MJ6257 MJ3771 MJ6302 MJ3773 MJ6700 MJ6701 MJ6701 MJ6257 MJ6302 ADC 808 PDF

    MJE2160

    Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
    Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications


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    MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103 PDF

    MPQ2369

    Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
    Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.


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    MPQ2369 MHQ2369 MPQ2483 MPQ2484 2N2483 2N2484 O-116 MPQ2483 MPQ2369 MHQ2906 2N2484 MPQ2484 MPQ2906 MPQ2907 PDF

    MPS8099

    Abstract: MPS8599 IC 7410 transistor 2sc 973 AN-415 MPS8098 MPS8598
    Text: MPS8098, MPS8099NPN MPS8598, MPS8599PNP SILICON COMPLEMENTARY SILICON ANNULAR AMPLIFIER TRANSISTORS COMPLEMENTARY SILICON AMPLIFIER TRANSISTORS . . . designed for general-purpose amplifier applications for audio circuits. • Collector Emitter Breakdown Voltage —


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    MPS8098, MPS8099NPN MPS8598, MPS8599PNP MPS8598 MPS8099, MPS8599 MPS8098 MPS8099 MPS8599 IC 7410 transistor 2sc 973 AN-415 PDF

    MD7002

    Abstract: RB2K MD7002A MD7002B IB 6407 02k02
    Text: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.


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    MD7002 MD7002A MD7002B 100/uAdc M07CI02A MD7CI02B MD7002B MD7002A MD7002 RB2K IB 6407 02k02 PDF

    MD3762

    Abstract: MD3762F MQ3762 rfl3
    Text: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —


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    MD3762 MD3762F MQ3762 MD3762 MQ3762 rfl3 PDF

    MJE370

    Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
    Text: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers


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    MJE3370 MJE370 MJE3371 MJE371 MJE3439, MJE3440 MJE3439 MJE3440 JE3440 MJE3370 MJE3371 MJE-3439 PDF

    md8003

    Abstract: md8002 md8001 65407
    Text: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap­ plications. •


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    MD8001 MD8002 MD8003 MD8001 MD8003 65407 PDF

    MMCM2907

    Abstract: MMCM3798 MMCM3799 MMCM3903 MMCM3904 MMT2907 MMT3798 MMT3903
    Text: MMCM2907 SILICON MICRO-T PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . designed for general-purpose switching and am plifier applications, where high-density packaging is required. Space Saving Micro-Miniature Packages


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    MMCM2907 MMT2907 MMCM2907 MMCM3798, MMCM3799 MMT3798 MMCM3903, MMCM3904 MMT3903 MMCM3798 MMCM3799 MMCM3903 MMCM3904 PDF

    MJE130

    Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
    Text: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high­ speed switching applications. • COMPLEMENTARY SILICON


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    MJE220 MJE225 MJE230 MJE235 MJE220/MJE222 MJE230/MJE232 MJE223/MJE225 MJE233/MJE235 MJE221 MJE222 MJE130 mje135 MJE231 200 watts audio amp power transistors pnp PDF

    MMT72

    Abstract: No abstract text available
    Text: MMT72 SILICON NPN SILICON ANNULAR MICRO-MINIATURE NPN SILICON SWITCHING TRANSISTOR TRANSISTOR . . . designed fo r high-speed, low-current switching applications where higtvdensity packaging is required. • Ideal for Thick Film Digital C ircuit Applications


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    MMT72 10mAdc, 10Vdc MMT72 PDF

    m0325

    Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
    Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.


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    MD3250, MD3251, MQ3251 50mAdc MD3251 MD3250' m0325 M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261 PDF

    MD918

    Abstract: MD918A K 1170 MD918F MD918B MD918BF
    Text: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.


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    MD918, MD918F, MD918 MD918F MD918A K 1170 MD918B MD918BF PDF

    MHQ6100

    Abstract: MHQ6100A ADE 352 2N3798 2N930
    Text: MHQ6100 SILICON MHQ6100A QUAD DUAL-IN-LINE HERMETIC SILICON ANNULAR COMPLEMENTARY PAIR TRANSISTORS QUAD DUAL-IN-LINE SILICON COMPLEMENTARY PAIR TRANSISTORS . designed fo r complem entary circuits where low-level, low-noise am plification is required. •


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    MHQ6100 MHQ6100A 2N3798 2N930 O-116 MHQ6100 MHQ6100A ADE 352 2N3798 2N930 PDF

    MQ3799A

    Abstract: MQ3798 MQ3799 4PD4
    Text: MQ3798 silicon MQ3799 MQ3799A PNP SILICON ANNULAR PNP SILICON M ULTIPLE TRANSISTORS M ULTIPLE TRANSISTORS . . . designed for use in high-gain, low noise amplifiers; front end detectors and temperature compensation applications. Low Collector-Emitter Saturation Voltage —


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    MQ3798 MQ3799 MQ3799A MQ3799A MQ3798 4PD4 PDF

    K83 Package

    Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
    Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —


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    MPQ1050 O-116 30Vdc 500mAdc, 50mAdc) MPQ2221 MPQ2222 MHQ2221 K83 Package MPQ1050 transistor k84 MPQ2221 MPQ105 PDF