MJ3771
Abstract: MJ3773 MJ6257 MJ6302 MJ6700 MJ6701 ADC 808
Text: MJ6257 SILICON For Specifications, See MJ3771 Data. MJ6302 (silicon) For Specifications, See M J3773 Data. MJ6700,MJ6701 (SILICON) 7 AMPERE POWER TRANSISTORS PNP SILICON M EDIUM-POW ER PNP SILICON TRANSISTORS . . . designed for switching and wide-band amplifier applications.
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MJ6257
MJ3771
MJ6302
MJ3773
MJ6700
MJ6701
MJ6701
MJ6257
MJ6302
ADC 808
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MJE2160
Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103
Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications
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MJE2090
MJE2093
MJE1090
MIE2100
MJE2103
MJE2160
SeeAN-415)
MJE2160
power transistor audio amplifier 500 watts
MJE2090
MJE210
MJE2093
MJE2103
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MPQ2369
Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.
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MPQ2369
MHQ2369
MPQ2483
MPQ2484
2N2483
2N2484
O-116
MPQ2483
MPQ2369
MHQ2906
2N2484
MPQ2484
MPQ2906
MPQ2907
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MPS8099
Abstract: MPS8599 IC 7410 transistor 2sc 973 AN-415 MPS8098 MPS8598
Text: MPS8098, MPS8099NPN MPS8598, MPS8599PNP SILICON COMPLEMENTARY SILICON ANNULAR AMPLIFIER TRANSISTORS COMPLEMENTARY SILICON AMPLIFIER TRANSISTORS . . . designed for general-purpose amplifier applications for audio circuits. • Collector Emitter Breakdown Voltage —
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MPS8098,
MPS8099NPN
MPS8598,
MPS8599PNP
MPS8598
MPS8099,
MPS8599
MPS8098
MPS8099
MPS8599
IC 7410
transistor 2sc 973
AN-415
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR DESCRIPTION The UTC UP1620 is a silicon PNP silicon power transistor, it uses UTC’s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high DC current
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UP1620
UP1620
UP1620L-x-T3P-T
UP1620G-x-T3P-T
QW-R214-025
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IC 8088
Abstract: MA4T64535 "Semiconductor Master" thurlby power supply MA4T645 micro X ODS-512 MA4T64500
Text: Preliminary Specification High Reliability Semiconductor Silicon Bipolar Low Noise Transistor V1.00 ODS 512 Outline Features x x x x ML4T645-S-512 fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified Description The ML4T645 is a NPN small signal silicon bipolar transistor, well
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ML4T645-S-512
ML4T645
IC 8088
MA4T64535
"Semiconductor Master"
thurlby power supply
MA4T645
micro X
ODS-512
MA4T64500
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MD7002
Abstract: RB2K MD7002A MD7002B IB 6407 02k02
Text: MD7002 silicon MD7002A MD7002B NPN SILICON ANNULAR MULTIPLE TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation applications.
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MD7002
MD7002A
MD7002B
100/uAdc
M07CI02A
MD7CI02B
MD7002B
MD7002A
MD7002
RB2K
IB 6407
02k02
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MD3762
Abstract: MD3762F MQ3762 rfl3
Text: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —
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MD3762
MD3762F
MQ3762
MD3762
MQ3762
rfl3
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m0346
Abstract: BI 342 MD3467 MD3467F MQ3467
Text: MD3467 MD3467F MQ3467 SILICON MULTIPLE SILICON ANNULAR PNP SILICON TRANSISTORS M ULTIPLE . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation applications. • Collector-Emitter Breakdown Voltage —
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MD3467
MD3467F
MQ3467
m0346
BI 342
MD3467
MQ3467
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MJE370
Abstract: MJE3439 JE3440 MJE3370 MJE3440 MJE3371 MJE371 MJE-3439
Text: MJE3370 SILICON For SpecificationS; See MJE370 Data. ^ U E 3 3 7 1 (SILICON) For Specifications, See MJE371 Data. MJE3439, MJE3440 (SILICON) 0.3 AMPERE NPN SILICO N HIG H-VO LTAG E POWER TRANSISTORS NPN SILICON POWER TRANSISTORS . . . designed for use as video o utput amplifiers in television receivers
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MJE3370
MJE370
MJE3371
MJE371
MJE3439,
MJE3440
MJE3439
MJE3440
JE3440
MJE3370
MJE3371
MJE-3439
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md8003
Abstract: md8002 md8001 65407
Text: MD8001 SILICON MD8002 MD8003 NPN SILICON MULTIPLE TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front-end detectors and tem perature compensation ap plications. •
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MD8001
MD8002
MD8003
MD8001
MD8003
65407
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MMCM2907
Abstract: MMCM3798 MMCM3799 MMCM3903 MMCM3904 MMT2907 MMT3798 MMT3903
Text: MMCM2907 SILICON MICRO-T PNP SILICON SWITCHING AND AMPLIFIER TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . designed for general-purpose switching and am plifier applications, where high-density packaging is required. Space Saving Micro-Miniature Packages
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MMCM2907
MMT2907
MMCM2907
MMCM3798,
MMCM3799
MMT3798
MMCM3903,
MMCM3904
MMT3903
MMCM3798
MMCM3799
MMCM3903
MMCM3904
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transistor 835
Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558
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BC327;
BC327A;
BC328
BC337;
BC337A;
BC338
BC546;
BC547;
BC548
BC556;
transistor 835
Amplifier with transistor BC548
TRANSISTOR regulator
AUDIO Amplifier with transistor BC548
transistor 81 110 w 85
transistor 81 110 w 63
transistor
transistor 438
TRANSISTOR GUIDE
transistor 649
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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MMT72
Abstract: No abstract text available
Text: MMT72 SILICON NPN SILICON ANNULAR MICRO-MINIATURE NPN SILICON SWITCHING TRANSISTOR TRANSISTOR . . . designed fo r high-speed, low-current switching applications where higtvdensity packaging is required. • Ideal for Thick Film Digital C ircuit Applications
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MMT72
10mAdc,
10Vdc
MMT72
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PMBFJ174
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel
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PMBFJ174
MAM386
R77/02/8
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PMBFJ174
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel
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PMBFJ174
MAM386
R77/02/8
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m0325
Abstract: M-0325 MD3250 MD3250F MD3251 MD3251F MQ3251 MQ3261
Text: MD3250, A, F, AF SILICON MD3251, A, F, AF MQ3251 MULTIPLE SILICON ANNULAR TRANSISTORS PNP SILICON MULTIPLE TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation applications.
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MD3250,
MD3251,
MQ3251
50mAdc
MD3251
MD3250'
m0325
M-0325
MD3250
MD3250F
MD3251
MD3251F
MQ3251
MQ3261
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Untitled
Abstract: No abstract text available
Text: 1N1202RA Silicon Rectifier 4.98 Diodes Silicon Rectifiers General-Purpose American M. Page 1 of 1 Enter Your Part # Home Part Number: 1N1202RA Online Store 1N1202RA Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N1202RA
1N1202RA
com/1n1202ra
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MD918
Abstract: MD918A K 1170 MD918F MD918B MD918BF
Text: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.
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MD918,
MD918F,
MD918
MD918F
MD918A
K 1170
MD918B
MD918BF
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BD435
Abstract: BD441
Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON
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BD435,
BD437,
BD439,
BD441
BD438
BD442
BD435
BD437
BD439
BD435
BD441
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Untitled
Abstract: No abstract text available
Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON
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BD435G,
BD437G,
BD439G,
BD441G
BD438
BD442
BD435G
BD437G
BD439G
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2N4401 transistor
Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,
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CMLT4413
OT-563
CMLT4413
2N4401
2N4403
150mA,
2N4401 transistor
2N4401 NPN Switching Transistor
NPN, PNP for 500ma, 30v
2n4401 configuration
2N4403 surface mount
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Bft46
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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BFT46
MAM385
R77/02/pp11
Bft46
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