2N3735
Abstract: No abstract text available
Text: 2N3735 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J
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2N3735
MIL-PRF-19500
2N3735J)
2N3735JX)
2N3735JV)
2N3735JS)
MIL-STD-750
MIL-PRF-19500/395
2N3735
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Untitled
Abstract: No abstract text available
Text: 2N3735L Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735LJ
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2N3735L
MIL-PRF-19500
2N3735LJ)
2N3735LJX)
2N3735LJV)
2N3735LJS)
MIL-STD-750
MIL-PRF-19500/395
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Untitled
Abstract: No abstract text available
Text: 2N3735L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735LJ
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2N3735L
MIL-PRF-19500
2N3735LJ)
2N3735LJX)
2N3735LJV)
2N3735LJS)
MIL-STD-750
MIL-PRF-19500/395
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2N3735L
Abstract: 2N3735LJ 2N3735LJS 2N3735LJV 2N3735LJX
Text: 2N3735L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735LJ
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2N3735L
MIL-PRF-19500
2N3735LJ)
2N3735LJX)
2N3735LJV)
2N3735LJS)
MIL-STD-750
MIL-PRF-19500/395
2N3735L
2N3735LJ
2N3735LJS
2N3735LJV
2N3735LJX
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2N3735
Abstract: JANTX 2N3735 2N3735J 2N3735JS 2N3735JV 2N3735JX 2N3735 JANS
Text: 2N3735 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J
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2N3735
MIL-PRF-19500
2N3735J)
2N3735JX)
2N3735JV)
2N3735JS)
MIL-STD-750
MIL-PRF-19500/395
2N3735
JANTX 2N3735
2N3735J
2N3735JS
2N3735JV
2N3735JX
2N3735 JANS
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2N373
Abstract: 2n3735
Text: 2N3735 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3735J
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Original
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2N3735
MIL-PRF-19500
2N3735J)
2N3735JX)
2N3735JV)
2N3735JS)
MIL-STD-750
MIL-PRF-19500/395
2N373
2n3735
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TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
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2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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NTE339
Abstract: rf amplifier 100w
Text: NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large− signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
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NTE339
NTE339
80MHz.
50MHz
50MHz
rf amplifier 100w
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TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
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Untitled
Abstract: No abstract text available
Text: 2N3737UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737UBJ • JANTX level (2N3737UBJX)
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2N3737UB
MIL-PRF-19500
2N3737UBJ)
2N3737UBJX)
2N3737UBJV)
2N3737UBJS)
MIL-STD-750
MIL-PRF-19500/395
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PDF
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2N3737
Abstract: 2N3737J 2N3737JS 2N3737JV 2N3737JX
Text: 2N3737 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737J • JANTX level (2N3737JX)
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2N3737
MIL-PRF-19500
2N3737J)
2N3737JX)
2N3737JV)
2N3737JS)
MIL-STD-750
MIL-PRF-19500/395
2N3737
2N3737J
2N3737JS
2N3737JV
2N3737JX
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Untitled
Abstract: No abstract text available
Text: Central' CZT3019 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.
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CZT3019
OT-223
150mA,
500mA,
15OmA,
150mA
500mA
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Untitled
Abstract: No abstract text available
Text: 2N3737 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737J • JANTX level (2N3737JX)
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2N3737
MIL-PRF-19500
2N3737J)
2N3737JX)
2N3737JV)
2N3737JS)
MIL-STD-750
MIL-PRF-19500/395
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PDF
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2N3737UB
Abstract: 2N3737UBJ 2N3737UBJS 2N3737UBJX
Text: 2N3737UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3737UBJ • JANTX level (2N3737UBJX)
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2N3737UB
MIL-PRF-19500
2N3737UBJ)
2N3737UBJX)
2N3737UBJV)
2N3737UBJS)
MIL-STD-750
MIL-PRF-19500/395
2N3737UB
2N3737UBJ
2N3737UBJS
2N3737UBJX
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Untitled
Abstract: No abstract text available
Text: Central CZT3019 semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: IT The CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.
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CZT3019
OT-223
CZT3019
100hA
150mA,
500mA,
150mA
500mA
100nA,
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transistor NEC B 617
Abstract: nec. 5.5 473
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range
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2SC5007
2SC5007
transistor NEC B 617
nec. 5.5 473
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Untitled
Abstract: No abstract text available
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
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NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
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NTE343
Abstract: No abstract text available
Text: NTE343 Silicon NPN Transistor RF Power Output PO = 14W, 175MHz Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)
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NTE343
175MHz)
NTE343
175MHz
100mA,
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NTE342
Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
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NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
4 watt VHF
transistor 6w
"RF Power Amplifiers"
transistor power rating 5w
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NTE342
Abstract: No abstract text available
Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)
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NTE342
175MHz)
NTE342
175MHz
100mA,
600mW,
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27mhz rf amplifier
Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf amplifier
27mhz rf ic
27mhz
HF SSB APPLICATIONS
27mhz rf amplifier NPN transistor
HF power amplifier
12v class d amplifier 20W
27mhz transistor
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PDF
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27mhz rf ic
Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)
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NTE236
27MHz,
NTE236
27MHz)
27MHz
27mhz rf ic
27mhz rf amplifier NPN transistor
27mhz rf amplifier
12v class d amplifier 20W
27mhz transistor
27MHz power amplifier
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AVD400
Abstract: ASI10567 818 transistor
Text: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I
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AVD400
AVD400
ASI10567
818 transistor
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