DBB04
Abstract: DBB04C DBB04G SANYO RECTIFIER
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
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EN2793A
DBB04
DBB04]
DBB04C
DBB04G
DBB04
DBB04C
DBB04G
SANYO RECTIFIER
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
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EN2793A
DBB04
DBB04]
DBB04C
DBB04G
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DBB04
Abstract: DBB04C DBB04G
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
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EN2793A
DBB04
DBB04]
DBB04C
DBB04G
DBB04
DBB04C
DBB04G
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Package Dimensions Features • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
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EN2793A
DBB04
DBB04]
DBB04C
DBB04G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DB107G DIODE 1.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER + DESCRIPTION The UTC DB107G is a 1.0A glass passivated single-phase bridge rectifier. The UTC DB107G is suitable for automatic insertion. - DFM FEATURES
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DB107G
DB107G
DB107GL-DFM-T
DB107GP-DFM-T
QW-R227-003
QW-R227--03
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DB106G DIODE 1.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER + DESCRIPTION The UTC DB106G is a 1.0A glass passivated single-phase bridge rectifier. The UTC DB106G is suitable for automatic insertion. - DFM FEATURES
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DB106G
DB106G
DB106GL-DFM-T
DB106GP-DFM-T
QW-R227-002
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DBA30
Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Text: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A
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EN648D
DBA30
1088B
DBA30]
DBA30B
DBA30C
DBA30E
DBA30G
DBA30
DBA30E
DBA30G
silicon diode 3a
DIODE 3A
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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1KAB60
Abstract: 1kab20e
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000hay
11-Mar-11
1KAB60
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B500C1000
Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000trademarks
2011/65/EU
B500C1000
1KAB20
1KAB60
1kab40
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1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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18-Jul-08
1KAB80E
1KAB100E
1KAB10E
1KAB20E
1KAB40E
1KAB60E
B125C1000
B250C1000
B40C1000
B80C1000
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1KAB60E
Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Text: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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11-Mar-11
1KAB60E
1KAB80E
B125C1000
B250C1000
B40C1000
B80C1000
1KAB100E
1KAB10E
1KAB20E
1KAB40E
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thyristor control arc welding rectifier circuit
Abstract: 400 amp SCR used for welding rectifier welding transformer SCR ABB thyristor modules PN5-10DA 400 amp thyristor used for welding rectifier MDS100 three phase triac control arc welder inverter 3KW INDUCTION HEATING POWER SUPPLY
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing solid state relays, thyristor modules, diode modules, thyristor diode modules, fast recovery diode, single phase & three phase bridge rectifier and press fit diodes etc. along with about 150
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ISO9001
DXC-614Heatsink
thyristor control arc welding rectifier circuit
400 amp SCR used for welding rectifier
welding transformer SCR
ABB thyristor modules
PN5-10DA
400 amp thyristor used for welding rectifier
MDS100
three phase triac control
arc welder inverter
3KW INDUCTION HEATING POWER SUPPLY
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52098HA
Abstract: dbb10 DBB10B DBB10E DBB10G
Text: Ordering number:EN1061D DBB10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=1.0A. unit:mm 1112 [DBB10] Specifications
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EN1061D
DBB10
DBB10]
DBB10B
DBB10E
DBB10G
52098HA
dbb10
DBB10B
DBB10E
DBB10G
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b20c1500
Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
Text: Bulletin E2733 rev. D 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 A2s 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four
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E2733
2KBB05
2KBB10
2KBB20
b20c1500
2KBB20R
B250C1500 1000
b380c1500
B250C1500
2kbb10r
B80C1500
2KBB20
2KBB100R
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DBA500G
Abstract: diode 50A
Text: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
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DBA500G
ENA0699
A0699-3/3
DBA500G
diode 50A
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DBA500G
Abstract: No abstract text available
Text: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications
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DBA500G
ENA0699A
A0699-3/3
DBA500G
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HA 3089
Abstract: No abstract text available
Text: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2145C
DBA250
DBA250]
DBA250C
DBA250G
HA 3089
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2222C
DBA150
DBA150]
DBA150C
DBA150G
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2222C
DBA150
DBA150]
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2222C
DBA150
DBA150]
DBA150C
DBA150G
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DBA150
Abstract: DBA150C DBA150G
Text: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2222C
DBA150
DBA150]
DBA150
DBA150C
DBA150G
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lsha
Abstract: DBA30 DBA30B DBA30C DBA30E
Text: Ordering number:EN648D _ DBA30 ISAßroi Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. u n 11:m it i • Plaslic m olded type, 1088B •Peak reverse voltage ; V RM= |0 0 to 600V.
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EN643D
DBA30
1088B
DBA30B
DBA30C
DBA30E
D8A30G
lsha
DBA30
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PDF
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DBB04
Abstract: DBB04C DBB04G 2793a
Text: O rd e rin g n u m b e r: EN2793A DBB04 N0.2793A Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier F e a tu re s •Single-phase bridge rectifier use • Plastic molded structure • Peak reverse voltage : Vrm = 200 to 600V ■Average rectified current : Io = 0.4A
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EN2793A
DBB04
DBB04C
DBB04G
DBB04
2793a
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