IBM0364404CT3
Abstract: No abstract text available
Text: Discontinued 8/99 - last order; 12/99 - last ship IBM0364404 IBM03644B4 PC133 Synchronous DRAM - 64Mb Revision B Features • Programmable Wrap: Sequential or Interleave • High Performance: -75A, CL=3 Units • Multiple Burst Read with Single Write Option
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IBM0364404
IBM03644B4
PC133
cycles/64ms
IBM0364404CT3
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8mx32 simm 72 pin
Abstract: 32MB SIMM
Text: Discontinuted 9/98 - last order; 3/99 last ship IBM11D4320B4M x 3211/11, 5.0V, Sn/PbMMDS13DSU-011041020. IBM11D8320B8M x 3211/11, 5.0V, Sn/PbMMDS13DSU-011041020. IBM11D4320B IBM11D8320B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line
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IBM11D4320B4M
Sn/PbMMDS13DSU-011041020.
IBM11D8320B8M
IBM11D4320B
IBM11D8320B
72-Pin
SA14-4335-01
8mx32 simm 72 pin
32MB SIMM
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IBM0164405B16M
Abstract: IBM0164405BJ3D-50 IBM0164405BJ3D-60 IBM0164405P16M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
104ns
IBM0164405BJ3D-50
IBM0164405BJ3D-60
TSOP-32
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IBM0316809CT3D80
Abstract: IBM0316169C IBM0316809C
Text: Discontinued 12/98 - last order; 9/99 last ship . IBM0316409C IBM0316809C IBM0316169C IBM03164B9C 16Mb Synchronous DRAM-Die Revision D Features • Multiple Burst Read with Single Write Option • High Performance: -80 CL=3 -360 CL=3 -10 CL=3 Units 125 100
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IBM0316409C
IBM0316809C
IBM0316169C
IBM03164B9C
cycles/64ms
IBM0316809CT3D80
IBM0316169C
IBM0316809C
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IBM0164405B16M
Abstract: IBM0164405P16M GA15 514300
Text: Discontinued 8/98 - last order; 12/98 last ship IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM01644F5B 16M x 8 13/11 Stacked DRAM Features • 16,777,216 word by 4 bit organization by 2 high • Single 3.3 ± 0.3V power supply
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IBM0164405B16M
IBM0164405P16M
IBM01644F5B
576mW
cycles/64ms
GA15
514300
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Untitled
Abstract: No abstract text available
Text: Discontinuted 9/98 - last order; 3/99 last ship IBM11D8320B8M x 3211/11, 5.0V, Sn/Pb. IBM11E8320B8M x 3211/11, 5.0V, Au. IBM11D4325B IBM11D8325B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70
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IBM11D8320B8M
IBM11E8320B8M
IBM11D4325B
IBM11D8325B
72-Pin
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480BG IBM11E4480BG 4M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
IBM11D4480BG
IBM11E4480BG
72-Pin
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IBM11D2320LD-60
Abstract: No abstract text available
Text: Discontinuted 9/98 - last order; 3/99 last ship IBM11D2320BD2M x 3210/10, 5.0V, Sn/Pb. IBM11E2320BD2M x 3210/10, 5.0V, Au. IBM11D1320L IBM11D2320L 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60
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IBM11D2320BD2M
IBM11E2320BD2M
IBM11D1320L
IBM11D2320L
72-Pin
110ns
130ns
IBM11D2320LD-60
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IBM0165805B8M
Abstract: IBM0165805BJ3D-50 IBM0165805BJ3D-60 IBM0165805P8M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165805B8M x 812/11, 3.3V, EDO. IBM0165805P8M x 812/11, 3.3V, LP, SR, EDO. IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Features • 8,388,608 word by 8 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0165805B8M
IBM0165805P8M
IBM0165805B
IBM0165805P
104ns
IBM0165805BJ3D-50
IBM0165805BJ3D-60
TSOP-32
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4253-01
Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply
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IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
4253-01
IBM0165405BJ3D-50
IBM0165405BJ3D-60
TSOP-32
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8m x 36
Abstract: No abstract text available
Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D8480BA8M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E8480BA8M x 36 EOS11/11, 5.0V, Au. IBM11D8480BG IBM11E8480BG 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance:
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IBM11D8480BA8M
EOS11/11,
IBM11E8480BA8M
IBM11D8480BG
IBM11E8480BG
72-Pin
8m x 36
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IBM0164165B4M
Abstract: IBM0164165P4M TSOP50
Text: Discontinued 8/98 - last order; 12/98 last ship IBM0164165B4M x 1613/9, 3.3V, EDO. IBM0164165P4M x 1613/9, 3.3V, LP, SR, EDO. IBM0164165B IBM0164165P 4M x 16 13/9 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write • Single 3.3 ± 0.3V power supply
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IBM0164165B4M
IBM0164165P4M
IBM0164165B
IBM0164165P
104ns
TSOP50
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66 1104
Abstract: No abstract text available
Text: Discontinued 7/00 - last order; 9/00 - last ship IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11E4490BG IBM11D4490BG IBM11E8490BG IBM11D8490BG 4M/8M x 36 ECC-on-SIMM w/ Error Lines Preliminary Features • 72-Pin JEDEC-Standard Single In-Line
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IBM11D4480BA4M
EOS11/11,
IBM11E4480BA4M
IBM11E4490BG
IBM11D4490BG
IBM11E8490BG
IBM11D8490BG
72-Pin
66 1104
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IBM0165165B
Abstract: IBM0165165P4M IBM0165165B4M 88H2011
Text: Discontinued 8/98 - last order; 12/98 last ship IBM0165165B4M x 1612/10, 3.3V, EDO. IBM0165165P4M x 1612/10, 3.3V, LP, SR, EDO. IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features • 4,194,304 word by 16 bit organization • Dual CAS Byte Read/Write
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IBM0165165B4M
IBM0165165P4M
IBM0165165B
IBM0165165P
104ns
20nnformation
IBM0165165B
88H2011
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74F533
Abstract: F373 MC54 MC74FXXXDW
Text: OCTAL TRANSPARENT LATCH WITH 3-STATE OUTPUTS The MC54 / 74F533 consists of eight latches with 3-state outputs for bus organized system applications.The flip-flops appear transparent to the data when Latch Enable LE is HIGH. When LE is LOW, the data that meets the
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74F533
F373
MC54
MC74FXXXDW
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Untitled
Abstract: No abstract text available
Text: OCTAL TRANSPARENT LATCH WITH 3-STATE OUTPUTS The MC54 / 74F533 consists of eight latches with 3-state outputs for bus organized system applications.The flip-flops appear transparent to the data when Latch Enable LE is HIGH. When LE is LOW, the data that meets the
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74F533
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"Content Addressable Memory"
Abstract: MCM69D536 MCM63R736 MCM63R818 MCM63R836 MCM63R918 motorola cmos scm
Text: SG171/D REV 30, 10/16/00 Motorola Networking Memory Operation NMO Ultra Fast Category Organizations VDD Device No. Pin count Packages Speed Prod. Satus 8M 512K x 18 3.3 V MCM63R918 119 (FC) PBGA 3.0/3.3/3.7/4.0 Now Not recommended for new design. Use MCM63R918A.
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SG171/D
MCM63R918
MCM63R918A.
MCM63R918A
MCM63R836
MCM63R836A.
MCM63R836A
"Content Addressable Memory"
MCM69D536
MCM63R736
MCM63R818
MCM63R836
MCM63R918
motorola cmos scm
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SG171
Abstract: motorola cmos scm motorola memory scm MCM69D536 MCM63R736 MCM63R818 MCM63R836 MCM63R918 motorola cmos time base MOTOROLA 2N
Text: Freescale Semiconductor, Inc. SG171/D REV 30, 10/16/00 Motorola Networking Memory Operation NMO Ultra Fast Category Organizations VDD Device No. Pin count Packages Speed Prod. Satus 8M 512K x 18 3.3 V MCM63R918 119 (FC) PBGA 3.0/3.3/3.7/4.0 Now Not recommended for new design. Use
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SG171/D
MCM63R918
MCM63R918A.
MCM63R918A
MCM63R836
MCM63R836A.
MCM63R836A
SG171
motorola cmos scm
motorola memory scm
MCM69D536
MCM63R736
MCM63R818
MCM63R836
MCM63R918
motorola cmos time base
MOTOROLA 2N
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IBM03641644M
Abstract: IBM036440416M IBM03644B432M IBM03648048M
Text: Discontinued 8/99 - last order; 12/99 - last ship IBM036440416M x 412/10/2, 3.3V 72. IBM03644B432M x 412/10/2, 3.3V 72. IBM03641644M x 1612/8/2, 3.3V 72. IBM03648048M x 412/9/2, 3.3V 72. IBM0364804 IBM0364164 IBM0364404 IBM03644B4 64Mb Synchronous DRAM - Die Revision B
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IBM036440416M
IBM03644B432M
IBM03641644M
IBM03648048M
IBM0364804
IBM0364164
IBM0364404
IBM03644B4
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defect ppm sampling
Abstract: signetics
Text: Signetics Quality and Reliability Military Products SIGNETICS MILITARY PRODUCT QUALITY SIGNETICS SHIP-TO-STOCK STS PROGRAM Signetics Quality leadership begins with the In dustry's firstzerodefect warranty. If a single de fect is found in any lot that we ship, the entire lot
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1987and
tobelow100ppm.
defect ppm sampling
signetics
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defect ppm sampling
Abstract: No abstract text available
Text: Signetics Quality and Reliability Military Products SIG N ETICS MILITARY PRODUCT QUALITY SIG N ETICS SHIP-TO-STOCK STS PROGRAM Signetics Quality leadership begins with the In dustry's first zero defect warranty. If a single de fect is found in any lot that we ship, the entire lot
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1D1320
Abstract: 1D1320LD-70J
Text: Discenti muted 9/98 » Iasi order; 3/99 last ship IBM11D1320L IBM11D2320L 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-ln-Line Memory Module • Performance: ! -60 i -70 I i t:;Ac j RAS Access Tim e I 60ns I 70ns I i tcAC j CAS Access Tim e
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IBM11D1320L
IBM11D2320L
72-Pin
j110ris
130ns
1D1320
1D1320LD-70J
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IC 4804
Abstract: No abstract text available
Text: FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power ■ Common I/O Bus
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41024x1
IC 4804
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4804B
Abstract: 4804 4804BCC semi 4804 4804a c 4804a TCO 706 1N3064 EMM Semi
Text: GENERAL DESCRIPTION FEATURES • Single +5V Power Supply ■ 1Kx4 Organization ■ Replaces 41024x1 Static RAMs ■ Completely Static—No Clocks or Refresh ■ 18 Pin Package ■ Access/Cycle Times As Low As 400 nsec max ■ 250 mw Typical Operating Power
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41024x1
4804B
4804
4804BCC
semi 4804
4804a
c 4804a
TCO 706
1N3064
EMM Semi
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