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    Vishay Siliconix SIR468DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
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    DigiKey SIR468DP-T1-GE3 Digi-Reel 1
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    SIR468DP-T1-GE3 Cut Tape
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    Quest Components SIR468DP-T1-GE3 88
    • 1 $1.05
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    Vishay Intertechnologies SIR468DJ-T1-GE3

    (Alt: SIR468DJ-T1-GE3)
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    EBV Elektronik SIR468DJ-T1-GE3 41 Weeks 3,000
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    Vishay Huntington SIR468DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
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    Win Source Electronics SIR468DP-T1-GE3 30,700
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    SIR468 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR468DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC Original PDF

    SIR468 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 11-Mar-11

    SiR468DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


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    PDF SiR468DP S-82134 15-Sep-08

    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiR468DP_RC

    Abstract: SIR468DP 4502 mosfet mosfet 4502 9496 3351 data sheet AN609
    Text: SiR468DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF SiR468DP AN609, 30-Jul-08 SiR468DP_RC 4502 mosfet mosfet 4502 9496 3351 data sheet AN609

    sir468

    Abstract: No abstract text available
    Text: SPICE Device Model SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    PDF SiR468DP 18-Jul-08 sir468

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR468DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiR468DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR468DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0057 at VGS = 10 V 40 0.0076 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


    Original
    PDF SiR468DP SiR468DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    PA1005

    Abstract: PA1005.100NL SER2013-362ML sir472 LM5020 35SVPD47M SiR468DP SiR472DP 42CTQ030S LM25037
    Text: POWER designer Expert tips, tricks, and techniques for powerful designs www.national.com / powerdesigner No. 127 大電力昇圧型コンバータへの代替的なアプローチ — By David Baba, Product Applications Engineer L ID 大電力昇圧型コンバータではFET、ダイオードおよびインダク


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    PDF LM5112 LM25037 LM5020 PA1005 PA1005.100NL SER2013-362ML sir472 LM5020 35SVPD47M SiR468DP SiR472DP 42CTQ030S LM25037

    LTC42281

    Abstract: No abstract text available
    Text: LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller Features Description Power Path and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diodes n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane


    Original
    PDF LTC4228-1/LTC4228-2 LTC4228-1: LTC4228-2: 28-Lead dioOP-16 DFN-16 MSOP-10 DFN-10 GN-24 QFN-24 LTC42281

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Basic Calculation of a Boost Converters Power Stage

    Abstract: PA1005.100NL 35SVPD47M lm25037 switch boost Approach LM25037 LM5020 LM5112 National Step-Up Voltage Converter 6A Signal path designer
    Text: POWER designer Expert tips, tricks, and techniques for powerful designs www.national.com/powerdesigner No. 127 An Alternative Approach to Higher-Power Boost Converters — By David Baba, Product Applications Engineer A higher-power boost converter often requires special


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC4225-1/LTC4225-2 Dual Ideal Diode and Hot Swap Controller FEATURES n n n n n n n n n n n n n n DESCRIPTION Power Path and Inrush Current Control for Redundant Supplies Low Loss Replacement for Power Schottky Diodes Allows Safe Hot Swapping from a Live Backplane


    Original
    PDF LTC4225-1/LTC4225-2 LTC4225-1: LTC4225-2: 24-Lead SSOP-36 QFN-32 SSOP-16 DFN-16 MSOP-10 DFN-10

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


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    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    LTC4225UFD

    Abstract: LTC4225-1 SMAJ7A LTC4225 LTC4225-2 LTC4225C LTC4225I SBG1025L Si7336ADP sir468
    Text: LTC4225-1/LTC4225-2 Dual Ideal Diode and Hot Swap Controller Features Description Power Path and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diodes n Allows Safe Hot Swapping from a Live Backplane n 2.9V to 18V Operating Range


    Original
    PDF LTC4225-1/LTC4225-2 LTC4225-1: LTC4225-2: 24-Lead SSOP-36 QFN-32 SSOP-16 DFN-16 MSOP-10 DFN-10 LTC4225UFD LTC4225-1 SMAJ7A LTC4225 LTC4225-2 LTC4225C LTC4225I SBG1025L Si7336ADP sir468