SIR662
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR662
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sir662dp
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •
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SiR662DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 60 0.0048 at VGS = 4.5 V 60 0.0033 at VGS = 6 V 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •
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SiR662DP
SiR662DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • • • • S 2
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SiR662DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiR662DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 60 60 60 RDS(on) () 0.0027 at VGS = 10 V 0.0033 at VGS = 6 V 0.0048 at VGS = 4.5 V 60 Qg (TYP.) • TrenchFET Power MOSFET • 100 % Rg and UIS tested
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SiR662DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR662DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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SiR662DP
AN609,
6624m
8149m
0001m
3616m
5585m
9313m
1004m
5400m
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67570
Abstract: No abstract text available
Text: SPICE Device Model SiR662DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR662DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
67570
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
11-Mar-11
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sir662dp
Abstract: 67570
Text: SPICE Device Model SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR662DP
18-Jul-08
67570
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Untitled
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V 60 0.0048 at VGS = 4.5 V 60 60 Qg (Typ.) 27.5 nC PowerPAK SO-8 S 6.15 mm • • • •
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SiR662DP
SiR662DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR662DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (TYP.) 100 27.5 nC 0.0027 at VGS = 10 V 60 0.0033 at VGS = 6 V • Material categorization: for definitions of compliance please see
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SiR662DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PowerPAK 1212-8
Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of
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SC-70
O-220
O-236
SiR640DP
Si4038DY
SiS488DN
SiR662DP
SUP90N06-02P
SUM90N06-02P
Si4062DY
PowerPAK 1212-8
sir640
SiA442DJ
SO8L
PowerPAK SO-8
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draloric potentiometers cermet 581
Abstract: WISTRON power sequence
Text: Build Vishay into your Design VISHAY INTERTECHNOLOGY, INC. Corporate Headquarters // 63 Lancaster Avenue Malvern, PA 19355-2120 // United States p: 610.644.1300 // f: 610.296.0657 225289_Vishay_AR_CVR_R1.indd 1-3 ve Di mp Co e rs Di ve www.vishay.com 20 on
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Full Material
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙） AMS（航空、 衛星/GPS 4
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SiZ710DT
Top-10
SiR662DP
CNY64ST
CNY65ST
IWAS-4832FF-50
VLMx1300
VMN-MS6792-1304-AMS
Full Material
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DG9454
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. SUPER 12 Featured Products version 3.0 www.vishay.com/landingpage/super12/ver3 S12 Super 12 Featured Products 146 CTI SMD Chip Polarized Aluminum Capacitor High temperature up to + 125 °C , low impedance (down to 35 mΩ), AEC-Q200 qualified
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com/landingpage/super12/ver3
AEC-Q200
SiR662DP
-6767GZ-51
VMN-MS6559-1102
DG9454
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics
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SiR640DP
Si4038DY
SiS488DN
SiR662DP
O-220
O-263
SUP90N06-02P
SUM90N06-02P
Si4062DY
SiJ462DP
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, AMS (Avionics, Military, and Space) Military, and Space) Satellites/GPS 4
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SiZ710DT
Top-10
SiR662DP
CNY64ST
CNY65ST
IWAS-4832FF-50
VLMx1300
VMN-MS6761-1212
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs
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O-263)
Si4038DY
SiS488DN
SUM50020EL
SUP50020EL
SiR662DP
SiR688DP
SiR664DP
SiJ462DP
SiS862DN
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N-Channel MOSFETs
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in
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SC-70
SC-75
1212-8S
VMN-MS6926-1406
N-Channel MOSFETs
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