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    SIRA Price and Stock

    Vishay Siliconix SIRA74DP-T1-GE3

    MOSFET N-CH 40V 24A/81.2A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA74DP-T1-GE3 Cut Tape 12,407 1
    • 1 $1.47
    • 10 $0.952
    • 100 $1.47
    • 1000 $0.46469
    • 10000 $0.46469
    		Buy Now
    SIRA74DP-T1-GE3 Digi-Reel 12,407 1
    • 1 $1.47
    • 10 $0.952
    • 100 $1.47
    • 1000 $0.46469
    • 10000 $0.46469
    		Buy Now
    SIRA74DP-T1-GE3 Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3978
    		Buy Now

    Vishay Siliconix SIRA28BDP-T1-GE3

    MOSFET N-CH 30V 18A/38A PPAK SO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA28BDP-T1-GE3 Digi-Reel 6,382 1
    • 1 $0.65
    • 10 $0.435
    • 100 $0.65
    • 1000 $0.22191
    • 10000 $0.22191
    		Buy Now
    SIRA28BDP-T1-GE3 Cut Tape 6,382 1
    • 1 $0.65
    • 10 $0.435
    • 100 $0.65
    • 1000 $0.22191
    • 10000 $0.22191
    		Buy Now
    SIRA28BDP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.18462
    		Buy Now

    Vishay Siliconix SIRA54ADP-T1-RE3

    N-CHANNEL 40 V (D-S) MOSFET POWE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA54ADP-T1-RE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.62763
    		Buy Now
    SIRA54ADP-T1-RE3 Digi-Reel 6,000 1
    • 1 $2.67
    • 10 $1.72
    • 100 $2.67
    • 1000 $0.87575
    • 10000 $0.87575
    		Buy Now
    SIRA54ADP-T1-RE3 Cut Tape 6,000 1
    • 1 $2.67
    • 10 $1.72
    • 100 $2.67
    • 1000 $0.87575
    • 10000 $0.87575
    		Buy Now

    Vishay Siliconix SIRA62DP-T1-RE3

    MOSFET N-CH 30V 51.4A/80A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA62DP-T1-RE3 Cut Tape 5,850 1
    • 1 $1.58
    • 10 $1.081
    • 100 $1.58
    • 1000 $0.60863
    • 10000 $0.60863
    		Buy Now
    SIRA62DP-T1-RE3 Digi-Reel 5,850 1
    • 1 $1.58
    • 10 $1.081
    • 100 $1.58
    • 1000 $0.60863
    • 10000 $0.60863
    		Buy Now

    Vishay Siliconix SIRA58DP-T1-GE3

    MOSFET N-CH 40V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA58DP-T1-GE3 Cut Tape 2,420 1
    • 1 $1.38
    • 10 $0.932
    • 100 $1.38
    • 1000 $0.52448
    • 10000 $0.52448
    		Buy Now
    SIRA58DP-T1-GE3 Digi-Reel 2,420 1
    • 1 $1.38
    • 10 $0.932
    • 100 $1.38
    • 1000 $0.52448
    • 10000 $0.52448
    		Buy Now
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    SIRA Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA00DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A SO8 PWR PK Original PDF
    SIRA01DP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V POWERPAK SO-8 Original PDF
    SIRA02DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A SO-8 Original PDF
    SIRA04DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A POWERPAK Original PDF
    SIRA06DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO8 PWR PK Original PDF
    SIRA10BDP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 30V Original PDF
    SIRA10DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A SO-8 Original PDF
    SIRA12BDP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 30V Original PDF
    SIRA12DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25A SO8 PWR PK Original PDF
    SIRA14BDP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 30-V POWERPAK SO-8 Original PDF
    SIRA14DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 58A SO-8 Original PDF
    SIRA16DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V D-S PPAK SO-8 Original PDF
    SIRA18ADP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30.6A POWERPAKSO Original PDF
    SIRA18BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 19A/40A PPAK SO8 Original PDF
    SIRA18DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 33A SO-8 Original PDF
    SIRA20BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 82A/335A PPAK Original PDF
    SIRA20DP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 25V POWERPAK SO-8 Original PDF
    SIRA22DP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 60A POWERPAKSO-8 Original PDF
    SIRA24DP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 60A POWERPAKSO-8 Original PDF
    SIRA26DP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 60A POWERPAKSO-8 Original PDF

    SIRA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    63935

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiRA14DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63935 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification


    Original     		SiRA00DP SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA34DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0067 at VGS = 10 V 40 0.0098 at VGS = 4.5 V 40 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm 1 S 2 S 3 • TrenchFET® Gen IV Power MOSFET


    Original     		SiRA34DP SiRA34DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA14DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a, g 0.00510 at VGS = 10 V 20 0.00850 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.4 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • High Power Density DC/DC


    Original     		SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA02DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiRA02DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA06DP 2002/95/EC SiRA06DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.00510 at VGS = 10 V 58 0.00850 at VGS = 4.5 V 45 Qg (TYP.) 9.4 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiRA14DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    PowerPAK

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PowerPAK PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm


    Original     		SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA14DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a 0.00510 at VGS = 10 V 58 0.00850 at VGS = 4.5 V 45 Qg (TYP.) 9.4 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:


    Original     		SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIRA12DP

    Abstract: diode gen 52
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 11-Mar-11 diode gen 52 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		SiRA04DP SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: • Sñ SILICON SENSORS INC D E lfl E SB ^ SS 0 0 0 0 2 0 5 0 T-41-13' I^P‘^ g è v llW jt V V ié Îô n ^ if t :- 5 ^ i 3 l ^ Gl Telephone: 608 -935-2707 ¿tWX: 910-280-1^ " " kL Silicon Sensors SIRAD 4 Gallium Aluminum Arsenide Light Emit- ^ ting Diode emits an intense spectrally narrow band of non coherent infrared energy peaking at 890 nanometers. The SIRAD 4 has a lens^ v


    OCR Scan     		T-41-13' PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON SENSORS INC 55 Highway 18 East ’ T-41-13 DE | 6553^55 0D0D27Ö T / Í$ IIE *Z @ E S @ W í yDodgevìlle, Wisconsin 535âîk>% Telephone: 608-935h2707v:,s / . ;-yC- V:. • V • SILICON SENSORS SIRAD-2 Gallium Aluminum Arsenide Light Emitting Diodes, produce a band of high intensity non coherent


    OCR Scan     		0D0D27Ö T-41-13 608-935h2707v: DDD27 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON SENSORS INC Sfl DE SILICON S E N $O R S O N ter ' Highwiày 18 Ea$í:í ^^ge^líé^Wist^h8Ín:fó 5 ^ t^ íítéfephbrie; 608 -935-27^7 H , f ; Silicon Sensors SIRAD 1 Gallium Aluminum Arsenide Light Emit­ ting Diodes emit an intense spectrally narrow band of non coherent


    OCR Scan     		lflB53T QQE77 T-41-13 PDF

    dm70 tube

    Abstract: dm70 tube 1M3 Scans-0017347
    Text: AMPEREX TUBE TYPE 1M3/DM70 The is a subm iniature tuning in d ica to r tube sp e c ially d esig n ed or u se in FM tu n ers w here th e demand for h ig h -fid elity sound reproduction m akes highly accu rate tuning very d e sira b le . T h is v isu al tuning tube i s a lso su ita b le


    OCR Scan     		1M3/DM70 ThejM3/DM70 TheiM3/DM70 dm70 tube dm70 tube 1M3 Scans-0017347 PDF