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Vishay Siliconix SIS862DN-T1-GE3 MOSFET N-CH 60V 40A PPAK1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIS862DN-T1-GE3	Cut Tape			1	1 $1.71 10 $1.083 100 $1.71 1000 $0.52271 10000 $0.52271	Buy Now
	SIS862DN-T1-GE3	Digi-Reel			1	1 $1.71 10 $1.083 100 $1.71 1000 $0.52271 10000 $0.52271	Buy Now
	SIS862DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.46006	Buy Now
RS	SIS862DN-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.13	Get Quote
Vishay Intertechnologies SIS862DN-T1-GE3 Trans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS862DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS862DN-T1-GE3	Reel		27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.41513	Buy Now
Mouser Electronics	SIS862DN-T1-GE3		9,390			1 $1.18 10 $0.919 100 $0.746 1000 $0.657 10000 $0.552	Buy Now
Verical	SIS862DN-T1-GE3		2,000		14	1 - 10 - 100 $0.4328 1000 $0.4328 10000 $0.4328	Buy Now
Arrow Electronics	SIS862DN-T1-GE3	Cut Strips	2,000	27 Weeks	1	1 $1.1545 10 $0.9054 100 $0.708 1000 $0.4328 10000 $0.4328	Buy Now
Newark	SIS862DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.449	Buy Now
	SIS862DN-T1-GE3	Cut Tape			1	1 $1.16 10 $0.919 100 $0.739 1000 $0.739 10000 $0.739	Buy Now

TTI	SIS862DN-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.465	Buy Now
TME	SIS862DN-T1-GE3				1	1 $1.04 10 $0.94 100 $0.75 1000 $0.7 10000 $0.7	Get Quote
Avnet Asia	SIS862DN-T1-GE3			28 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIS862DN-T1-GE3			27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIS862DN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIS862DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A 1212		Original	PDF

SIS862DN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SPICE Device Model SiS862DN www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiS862DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () (Max.) ID (A)f 0.0085 at VGS = 10 V 40g 0.0105 at VGS = 6.0 V 40g 0.0125 at VGS = 4.5 V 40g • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm	Original	PDF	SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiS862DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () (Max.) ID (A)f 0.0085 at VGS = 10 V 40g 0.0105 at VGS = 6.0 V 40g 0.0125 at VGS = 4.5 V 40g • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm	Original	PDF	SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiS862DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () (Max.) ID (A)f 0.0085 at VGS = 10 V 40g 0.0105 at VGS = 6.0 V 40g 0.0125 at VGS = 4.5 V 40g • • • • Qg (Typ.) 8.7 nC PowerPAK 1212-8 S 3.30 mm	Original	PDF	SiS862DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiS862DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiS862DN AN609, 2015m 8084u 6615m 1038m 7493m 5346m 4642m 16-Apr-13
PowerPAK 1212-8 Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of	Original	PDF	SC-70 O-220 O-236 SiR640DP Si4038DY SiS488DN SiR662DP SUP90N06-02P SUM90N06-02P Si4062DY PowerPAK 1212-8 sir640 SiA442DJ SO8L PowerPAK SO-8
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics	Original	PDF	SiR640DP Si4038DY SiS488DN SiR662DP O-220 O-263 SUP90N06-02P SUM90N06-02P Si4062DY SiJ462DP
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs	Original	PDF	O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	PDF	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs