SL 100 NPN TRANSISTOR Search Results

SL 100 NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

SL 100 NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
131S Abstract: 2N3026 15149 sdt8004 SDT7413 SDT7414 SDT7415 SDT7416 SDT7417 SDT7418 Text: 25 SILICON POWER TRANSISTORS SATU RA TIO N V O LTA G E S C U R R E N T GAIN TYPE NUM BER CASE T YP E V CEO V CBO V 1 V V EBO V hFE MIN. I M AX. V CE v I 'c V CE s A v V BE(s> ! 'c V A I 'b A 5 AMP Sl LICON NPN SDT7413 SDT7414 SDT7415 TO-5 TO-5 TO-5 100 60	OCR Scan	sdt7413 sdt7414 sdt7415 sdt7416 sdt7417 sdt7418 sdt7419 sdt9001 sdt9002 sdt9003 131S 2N3026 15149 sdt8004	PDF
SL 100 NPN Transistor Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE	OCR Scan	THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor	PDF
SL 100 NPN Transistor Abstract: T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC Text: e TRANSYS BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE m CTKONICS LIM IT E D Designed Specifically for High Frequency Electronic Ballasts D PACKAGE TOP VIEW Integrated Fast trr Anti-parallel Diode, Enhancing Reliability B l= Diode trr Typically 500 ns	OCR Scan	BULD25D, BULD25DR, BULD25SL T0220 SL 100 NPN Transistor T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC	PDF
D008 Abstract: SL 100 NPN Transistor Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-parallel Diode, Enhancing Reliability •	OCR Scan	BULD25D, BULD25DR, BULD25SL D008 SL 100 NPN Transistor	PDF
SL 100 NPN Transistor Abstract: T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability ●	Original	BULD25D, BULD25DR, BULD25SL SL 100 NPN Transistor T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V	PDF
t056 Abstract: SK9413 SK9431 SK9429 sk9436 SK9437 SK9439 SK9415 SK9440 SL 100 NPN Transistor Text: THOriSON/ D I S T R I B U T O R BIPOLAR TRANSISTORS SflE D • TaSbfl73 0 0 0 4 0 3 5 Ofl? ■ T C SK com . Maximum Ratings TCE Type Device Polarity & Material Application "complementary device type SK9412 NPN/Si High-Voltage, High-Current TV SK9413 NPN/Si	OCR Scan	TaSbfl73 SK9412 SK9413 SK9415 SK9415 SK9413 SK9417 SK9418 SK9421 T-064 t056 SK9431 SK9429 sk9436 SK9437 SK9439 SK9440 SL 100 NPN Transistor	PDF
BFR38 Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022	OCR Scan	XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a	PDF
BLU99 Abstract: BLU99/TDA3619/on4800 Text: i, One, tv TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f.	Original	BLU99 BLU99/SL BLU99 OT122A) BLU99/SL OT122D) BLU99/TDA3619/on4800	PDF
BLY32 Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier Text: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors	OCR Scan	OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier	PDF
SL 100 NPN Transistor base emitter collector Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN Text: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code \|E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,	OCR Scan	2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN	PDF
SK9484 Abstract: SK9487 SK9476 SK9475 THOMSON 58E SK9468 SK9469 SK9470 SK9471 SK9472 Text: THOHSON/ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • T02t.a?3 □ OQMflH'i 752 m TCSK con. ' Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application ‘complementary device type Device Power Dissipato. Collector Current Continuous	OCR Scan	SK9469 SK9468 SK9470 SK9471 SK9472 SK9473 SK9474 SK9475 T-048 SK9487 SK9484 SK9487 SK9476 THOMSON 58E SK9468	PDF
SK3180 Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201 Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current	OCR Scan	SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201	PDF
T1 SL 100 NPN Transistor Abstract: SL 100 NPN Transistor transistor BU 102 Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts • Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability FEBRUARY 1994 - REVISED SEPTEM BER 1997	OCR Scan	BULD50KC, BULD50SL T0220 T1 SL 100 NPN Transistor SL 100 NPN Transistor transistor BU 102	PDF
T1 SL 100 NPN Transistor Abstract: SL 100 NPN Transistor BULD50SL BULD50KC Text: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs	Original	BULD50KC, BULD50SL O-220 T1 SL 100 NPN Transistor SL 100 NPN Transistor BULD50SL BULD50KC	PDF

Si 122D Abstract: 122d transistor BLU11/Si 122D Text: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.	OCR Scan	bb53c G0Eflfl03 BLU11/SL OT-122D) BLU11/SL Si 122D 122d transistor BLU11/Si 122D	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.	OCR Scan	bbS3T31 0D2B774 BLT91/SL OT-172D)	PDF
sot172 Abstract: No abstract text available Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures	OCR Scan	BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172	PDF
SL 100 NPN Transistor Abstract: transistor B 560 SL 100 NPN Transistor base emitter collector 2SD1865 Text: 2SD1865 Transistor, NPN Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE/Sat) = 0.006 V at lc /lB = 1 mA/0.1 mA 2SD1865 (ATV TV2) • suitable for low-voltage large current drivers • high dc current gain and large current	OCR Scan	2SD1865 2SD1865 SL 100 NPN Transistor transistor B 560 SL 100 NPN Transistor base emitter collector	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.	OCR Scan	bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)	PDF
C3656 Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396 Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)	OCR Scan	11-sized 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 C3656 C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396	PDF
122d transistor Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.	OCR Scan	DQ28761 BLT92/SL OT122D)	PDF
SL 100 NPN Transistor base emitter collector Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz	Original	BLT92/SL SL 100 NPN Transistor base emitter collector mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor	PDF
STA451C Abstract: STA441C SL 100 NPN Transistor base emitter collector STA341M all transistor STA342M STA431A sanken sta341m sta400a transistor afr Text: E LECTi!I5 c.° LT1> 35E m P 7^0741 000074^ 5 EESAKJ T 4 3 - Z 5 STA431A/STA451C/STA453C NPN Silicon Triple-Diffused Mesa Type Transistor E/G PNP Silicon Epitaxial Planar Type Features ^Equivalent Circuits • •C om plem entary Pair Low Saturation Voltage	OCR Scan	STA431A/STA451C/STA453C STA431A, STA453C) STA400C STA340M STA400A STA441C STA451C STA453C SL 100 NPN Transistor base emitter collector STA341M all transistor STA342M STA431A sanken sta341m transistor afr	PDF

SL 100 NPN TRANSISTOR Search Results

SL 100 NPN TRANSISTOR Result Highlights (5)

SL 100 NPN TRANSISTOR Datasheets Context Search

131S

SL 100 NPN Transistor

SL 100 NPN Transistor

D008

SL 100 NPN Transistor

t056

BFR38

BLU99

BLY32

SL 100 NPN Transistor base emitter collector

SK9484

SK3180

T1 SL 100 NPN Transistor

T1 SL 100 NPN Transistor

Si 122D

Untitled

sot172

SL 100 NPN Transistor

Untitled

C3656

122d transistor

Untitled

SL 100 NPN Transistor base emitter collector

STA451C